New evaluation method of low-k dielectric films by using a gated PN-junction diode and a field MOS transistor

Abstract Deprocessing is an essential step in the physical failure analysis of ICs. Typically, this is accomplished by techniques such as wet chemical methods, RIE, and mechanical manual polishing. Manual polishing suffers from highly non-uniform delayering particularly for sub 20nm technologies due to aggressive back-end-of-line scaling and porous ultra low-k dielectric films. Recently gas assisted Xe plasma FIB has demonstrated uniform delayering of the metal and dielectric layers, achieving a planar surface of heterogeneous materials. In this paper, the successful application of this technique to delayer sub-20 nm microprocessor chips with real defects to root cause the failure is presented.

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Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

10.31399/asm.cp.istfa2018p0561 ◽

2018 ◽

Author(s):

K. A. Rubin ◽

W. Jolley ◽

Y. Yang

Keyword(s):

Thin Films ◽

Dielectric Film ◽

Dielectric Constants ◽

Dielectric Films ◽

Silicon Substrates ◽

Fem Modeling ◽

Dielectric Thin Films ◽

Microwave Microscopy ◽

Scanning Microwave Microscopy ◽

Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

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The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

MRS Proceedings ◽

10.1557/proc-766-e8.10 ◽

2003 ◽

Vol 766 ◽

Cited By ~ 7

Author(s):

Jin-Heong Yim ◽

Jung-Bae Kim ◽

Hyun-Dam Jeong ◽

Yi-Yeoul Lyu ◽

Sang Kook Mah ◽

...

Keyword(s):

Thin Film ◽

Mechanical Properties ◽

Dielectric Constant ◽

Pore Structure ◽

Pore Diameter ◽

Dielectric Films ◽

Low Dielectric Constant ◽

Cyclodextrin Derivatives ◽

Low Dielectric ◽

Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

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Copper Drifts in Porous Methylsilsesquiazane Low-k Dielectric Films

30th European Solid-State Device Research Conference ◽

10.1109/essderc.2000.194751 ◽

2000 ◽

Author(s):

T. Kikkawa ◽

S. Mukaigawa ◽

T. Oda ◽

T. Aoki ◽

Y. Shimizu

Keyword(s):

Dielectric Films ◽

Low K

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A comparative study on the measurement of toughness of stacks containing low-k dielectric films

Microelectronic Engineering ◽

10.1016/j.mee.2008.08.006 ◽

2008 ◽

Vol 85 (11) ◽

pp. 2322-2328 ◽

Cited By ~ 4

Author(s):

Z.W. Zheng ◽

I. Sridhar ◽

S. Balakumar

Keyword(s):

Comparative Study ◽

Dielectric Films ◽

Low K

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EELS chemical bond characterization of process induced damages in low-k dielectric films

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2012.6306296 ◽

2012 ◽

Cited By ~ 1

Author(s):

YongKai Zhou ◽

Jie Zhu ◽

AnYan Du ◽

YouNan Hua ◽

SiPing Zhao ◽

...

Keyword(s):

Chemical Bond ◽

Dielectric Films ◽

Low K

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Characterisation of Low-K Dielectric Films by Ellipsometric Porosimetry

MRS Proceedings ◽

10.1557/proc-612-d4.2.1 ◽

2000 ◽

Vol 612 ◽

Cited By ~ 13

Author(s):

M.R. Baklanov ◽

K.P. Mogilnikov

Keyword(s):

Pore Size Distribution ◽

Pore Size ◽

Size Distribution ◽

Surface Area ◽

Average Pore Size ◽

Dielectric Films ◽

Swelling Properties ◽

Small Surface ◽

Ellipsometric Porosimetry ◽

Low K

AbstractEllipsometric porosimetry (EP) is a simple and effective method for the characterization of the porosity (volume of both open and close pores), average pore size, specific surface area and pore size distribution (PSD) in thin porous films deposited on top of any smooth solid substrat e. Because a laser probe is used, small surface area can be analyzed. Therefore, EP can be used on patterned wafers and it is compatible with microelectronic technology. This method is a new version of adsorption (BET) porosimetry. In situ ellipsometry is used to determine the amount of adsorptive which adsorbed/condensed in the film. Change in refractive index is used to calculate of the quantity of adsorptive present in the film. EP also allows the study of thermal stability, adsorption and swelling properties of low-K dielectric films. Room temperature EP based on the adsorption of vapor of some suitable organic solvents and method of calculation of porosity and PSD is discussed. Examination of the validity of Gurvitsch rule for various organic adsorptives (toluene, heptane, carbon tetrachloride and isopropyl alcohol) has been carried out to assess the reliability of measurements of pore size distribution by the ellipsometric porosimetry.

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