High-Quality Two-Dimensional Electron Gas at Large Scale GaN/AlGaN Wafer Interface Prepared by Mass Production MOCVD Systems

2003 ◽  
Author(s):  
Syoji Yamada ◽  
Takashi Ohnishi ◽  
Tomoyasu Kakegawa ◽  
Masashi Akabori ◽  
Toshikazu Suzuki ◽  
...  
2005 ◽  
Vol 133 (10) ◽  
pp. 647-649 ◽  
Author(s):  
Syoji Yamada ◽  
Takashi Ohnishi ◽  
Tomoyasu Kakegawa ◽  
Masashi Akabori ◽  
Toshi-kazu Suzuki ◽  
...  

1990 ◽  
Vol 56 (17) ◽  
pp. 1697-1699 ◽  
Author(s):  
Loren Pfeiffer ◽  
K. W. West ◽  
H. L. Stormer ◽  
J. P. Eisenstein ◽  
K. W. Baldwin ◽  
...  

2016 ◽  
Vol 93 (16) ◽  
Author(s):  
Q. Shi ◽  
M. A. Zudov ◽  
L. N. Pfeiffer ◽  
K. W. West ◽  
J. D. Watson ◽  
...  

2018 ◽  
Vol 6 (25) ◽  
pp. 6680-6690 ◽  
Author(s):  
Jianli Cheng ◽  
Kesong Yang

This work demonstrates an efficient approach to design perovskite-oxide-based two dimensional electron gas systems using large-scale first-principles calculations.


1996 ◽  
Vol 449 ◽  
Author(s):  
W. Walukiewicz ◽  
L. Hsu ◽  
J. M. Redwing

ABSTRACTWe present the results of a theoretical study of the 2D electron gas mobility at a AlxGa1−xN/GaN heterointerface. All standard mechanisms, including scattering by acoustic and optical phonons, and remote and background (residual) impurities have been included in our calculation of theoretical mobility limits in a AlxGa1−xN/GaN structure. Comparison of calculations with experimental mobilities obtained from high quality MOCVD grown Al0.15Ga0.85N/GaN heterostructures shows that the low temperature mobility in these samples is dominated by scattering from ionized impurities, with a smaller contribution from acoustic phonons.


2009 ◽  
Vol 105 (1) ◽  
pp. 013707 ◽  
Author(s):  
Remziye Tülek ◽  
Aykut Ilgaz ◽  
Sibel Gökden ◽  
Ali Teke ◽  
Mustafa K. Öztürk ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document