Improved inverted AlInGa/GaInAs two-dimensional electron gas structures for high quality pseudomorphic double heterojunction AlInAs/GaInAs high electron mobility transistor devices
1994 ◽
Vol 12
(5)
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pp. 2910
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2020 ◽
Vol 8
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pp. 346-349
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1993 ◽
Vol 8
(8)
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pp. 1599-1604
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2008 ◽
Vol 40
(5)
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pp. 1380-1382
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2016 ◽
Vol 64
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pp. 589-593
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2017 ◽
Vol 17
(1)
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pp. 577-580
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