Quantum Confined Ultra-Thin Silicon Light-Emitting Transistor for On-Chip Optical Interconnection

2007 ◽  
Author(s):  
S. Saito ◽  
D. Hisamoto ◽  
H. Shimizu ◽  
H. Hamamura ◽  
R. Tsuchiya ◽  
...  
2006 ◽  
Vol 89 (16) ◽  
pp. 163504 ◽  
Author(s):  
Shin-ichi Saito ◽  
Digh Hisamoto ◽  
Haruka Shimizu ◽  
Hirotaka Hamamura ◽  
Ryuta Tsuchiya ◽  
...  

2012 ◽  
Vol E95.C (7) ◽  
pp. 1244-1251 ◽  
Author(s):  
Koji TAKEDA ◽  
Tomonari SATO ◽  
Takaaki KAKITSUKA ◽  
Akihiko SHINYA ◽  
Kengo NOZAKI ◽  
...  

Lab on a Chip ◽  
2015 ◽  
Vol 15 (3) ◽  
pp. 711-717 ◽  
Author(s):  
Cathy M. Rushworth ◽  
Gareth Jones ◽  
Martin Fischlechner ◽  
Emma Walton ◽  
Hywel Morgan

We have integrated disposable polymer mirrors within a microfluidic chip to form a multi-pass cell, which increases the absorption path length by a maximum of 28 times, providing micromolar detection limits in a probed volume of 10 nL.


2018 ◽  
Vol 11 (12) ◽  
pp. 122201 ◽  
Author(s):  
Yongjin Wang ◽  
Xin Wang ◽  
Jialei Yuan ◽  
Xumin Gao ◽  
Bingcheng Zhu

Author(s):  
Bin Xie ◽  
Haochen Liu ◽  
Xiao Wei Sun ◽  
Xingjian Yu ◽  
Kai Wang ◽  
...  

White light-emitting diodes (WLEDs) composed of blue LED chip, yellow phosphor, and red quantum dots (QDs) are considered as a potential alternative for next-generation artificial light source with their high luminous efficiency (LE) and color-rendering index (CRI). While, QDs’ poor temperature stability and the incompatibility of QDs/silicone severely hinder the wide utilization of QDs-WLEDs. To relieve this, here we proposed a separated QSNs/phosphor structure, which composed of a QSNs-on-chip layer with a yellow phosphor layer above. A silica shell was coated onto the QDs surface to solve the compatibility problem between QDs and silicone. With CRI > 92 and R9 > 90, the newly proposed QDs@silica nanoparticles (QSNs) based WLEDs present 16.7 % higher LE and lower QDs working temperature over conventional mixed type WLEDs. The reduction of QDs’ temperature can reach 11.5 °C, 21.3 °C and 30.3 °C at driving current of 80 mA, 200 mA and 300 mA, respectively.


2010 ◽  
Vol 18 (15) ◽  
pp. 15440 ◽  
Author(s):  
Kazuya Ohira ◽  
Kentaro Kobayashi ◽  
Norio Iizuka ◽  
Haruhiko Yoshida ◽  
Mizunori Ezaki ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document