Oxygen-Terminated Si Surface for Atomic Layer Deposition and its Impact on Interfacial Electrical Quality of sub-nm-EOT high-k Gate Stacks

2009 ◽  
Author(s):  
Y. Morita ◽  
S. Migita ◽  
N. Taoka ◽  
W. Mizubayashi ◽  
H. Ota
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Stacks ◽  
Layer Deposition ◽  
High K

scholarly journals Atomic layer deposition of LaxZr1−xO2−δ (x=0.25) high-k dielectrics for advanced gate stacks

2009 ◽  
Vol 94 (5) ◽  
pp. 053504 ◽  
Author(s):  
D. Tsoutsou ◽  
L. Lamagna ◽  
S. N. Volkos ◽  
A. Molle ◽  
S. Baldovino ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Stacks ◽  
Layer Deposition ◽  
High K

scholarly journals Dielectric properties of Er−doped HfO2 (Er∼15%) grown by atomic layer deposition for high-κ gate stacks

2010 ◽  
Vol 96 (18) ◽  
pp. 182901 ◽  
Author(s):  
C. Wiemer ◽  
L. Lamagna ◽  
S. Baldovino ◽  
M. Perego ◽  
S. Schamm-Chardon ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Stacks ◽  
Layer Deposition ◽  
Er Doped

Atomic Layer Deposition of Zirconium-Based High-k Metal Gate Oxide: Effect of Si Containing Zr Precursor

2015 ◽  
Vol 15 (1) ◽  
pp. 382-385
Author(s):  
Jun Hee Cho ◽  
Sang-Ick Lee ◽  
Jong Hyun Kim ◽  
Sang Jun Yim ◽  
Hyung Soo Shin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Metal Gate ◽  
Layer Deposition ◽  
High K
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