scholarly journals TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

2011 ◽  
Vol 14 (5) ◽  
pp. G27 ◽  
Author(s):  
Qi Xie ◽  
Jan Musschoot ◽  
Marc Schaekers ◽  
Matty Caymax ◽  
Annelies Delabie ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Semiconductor Devices ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Passivation Layer ◽  
Oxide Semiconductor ◽  
Gate Stacks ◽  
Layer Deposition

scholarly journals Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3443
Author(s):  
Jinyu Lu ◽  
Gang He ◽  
Jin Yan ◽  
Zhenxiang Dai ◽  
Ganhong Zheng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Leakage Current ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stacks ◽  
Mos Capacitors ◽  
Layer Deposition

In this paper, the effect of atomic layer deposition-derived laminated interlayer on the interface chemistry and transport characteristics of sputtering-deposited Sm2O3/InP gate stacks have been investigated systematically. Based on X-ray photoelectron spectroscopy (XPS) measurements, it can be noted that ALD-derived Al2O3 interface passivation layer significantly prevents the appearance of substrate diffusion oxides and substantially optimizes gate dielectric performance. The leakage current experimental results confirm that the Sm2O3/Al2O3/InP stacked gate dielectric structure exhibits a lower leakage current density than the other samples, reaching a value of 2.87 × 10−6 A/cm2. In addition, conductivity analysis shows that high-quality metal oxide semiconductor capacitors based on Sm2O3/Al2O3/InP gate stacks have the lowest interfacial density of states (Dit) value of 1.05 × 1013 cm−2 eV−1. The conduction mechanisms of the InP-based MOS capacitors at low temperatures are not yet known, and to further explore the electron transport in InP-based MOS capacitors with different stacked gate dielectric structures, we placed samples for leakage current measurements at low varying temperatures (77–227 K). Based on the measurement results, Sm2O3/Al2O3/InP stacked gate dielectric is a promising candidate for InP-based metal oxide semiconductor field-effect-transistor devices (MOSFET) in the future.

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

2010 ◽  
Vol 107 (10) ◽  
pp. 106104 ◽  
Author(s):  
D. Gregušová ◽  
R. Stoklas ◽  
Ch. Mizue ◽  
Y. Hori ◽  
J. Novák ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Trap States ◽  
Semiconductor Structures ◽  
Layer Deposition

GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization

2007 ◽  
Vol 91 (19) ◽  
pp. 193503 ◽  
Author(s):  
D. Shahrjerdi ◽  
D. I. Garcia-Gutierrez ◽  
T. Akyol ◽  
S. R. Bank ◽  
E. Tutuc ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Layer Deposition ◽  
Fabrication And Characterization
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