Tri-Gate Al0.2Ga0.8N/AlN/GaN HEMTs on SiC/Si-Substrates
2016 ◽
Vol 858
◽
pp. 1174-1177
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Keyword(s):
A nanochannel array structure was applied to realize enhancement-mode high electron mobility transistors based on AlGaN/AlN/GaN-heterostructures grown on Si substrates using a SiC transition layer. The fabricated nanochannel array HEMT, consisting of 78 channels connected in parallel with a channel width of 100 nm defined by electron-beam lithography and dry etching, shows a threshold voltage of 0.35 V. The high electron mobility transistors with LG= 0.2 μm had a maximum drain current density of 445 mA/mm and a peak extrinsic tranconductance of 235 mS/mm. A unity current gain cut-off frequency of 30 GHz and maximum oscillation frequency of 40 GHz were measured on these devices.
2017 ◽
2013 ◽
Vol 52
(8S)
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pp. 08JN02
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2006 ◽
Vol 32
(1-2)
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pp. 566-568
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