Excimer Laser Doping of LTPS Thin Films for Printable Device Fabrication

2018 ◽  
Author(s):  
N. Tanaka ◽  
K. Imokawa ◽  
A. Suwa ◽  
D. Nakamura ◽  
T. Sadoh ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Device Fabrication ◽  
Laser Doping

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication

2019 ◽  
Vol 963 ◽  
pp. 403-406
Author(s):  
Kaname Imokawa ◽  
Toshifumi Kikuchi ◽  
Kento Okamoto ◽  
Daisuke Nakamura ◽  
Akihiro Ikeda ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Low Cost ◽  
Device Fabrication ◽  
Contact Resistivity ◽  
Power Devices ◽  
High Concentration ◽  
Laser Doping ◽  
Krf Excimer Laser ◽  
Al Thin Film

We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of 4H-SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.

Excimer‐laser doping into Si thin films

1990 ◽  
Vol 67 (5) ◽  
pp. 2359-2363 ◽  
Author(s):  
K. Sera ◽  
F. Okumura ◽  
S. Kaneko ◽  
S. Itoh ◽  
K. Hotta ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Laser Doping

Excimer Laser Doping for Sub-Micron Device Fabrication

1988 ◽  
Author(s):  
H. Tomita ◽  
M. Negishi ◽  
T. Sameshima ◽  
H. Hayashi ◽  
S. Usui
Keyword(s):  
Excimer Laser ◽  
Device Fabrication ◽  
Laser Doping

Irradiation Induced Changes in Semiconducting Thin Films

2013 ◽  
Vol 341 ◽  
pp. 181-210 ◽  
Author(s):  
S.K. Tripathi
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Heavy Ions ◽  
Semiconductor Device ◽  
High Energy ◽  
Device Fabrication ◽  
Electrical Performance ◽  
Radiation Environment ◽  
Extended Defects ◽  
Semiconducting Thin Films

High-energy electron, proton, neutron, photon and ion irradiation of semiconductor diodes and solar cells has long been a topic of considerable interest in the field of semiconductor device fabrication. The inevitable damage production during the process of irradiation is used to study and engineer the defects in semiconductors. In a strong radiation environment in space, the electrical performance of solar cells is degraded due to direct exposure to energetically charged particles. A considerable amount of work has been reported on the study of radiation damage in various solar cell materials and devices in the recent past. In most cases, high-energy heavy ions damage the material by producing a large amount of extended defects, but high-energy light ions are suitable for producing and modifying the intrinsic point defects. The defects can play a variety of electronically active roles that affect the electrical, structural and optical properties of a semiconductor. This review article aims to present an overview of the advancement of research in the modification of glassy semiconducting thin films using different types of radiations (light, proton and swift heavy ions). The work which has been done in our laboratory related to irradiation induced effects in semiconducting thin films will also be compared with the existing literature.

Phase Variation of Amorphous-Si and Poly-Si Thin Films with Excimer Laser Irradiation

1996 ◽  
Vol 35 (Part 2, No. 11B) ◽  
pp. L1473-L1475 ◽  
Author(s):  
Kuninori Kitahara ◽  
Katsuyuki Suga ◽  
Akito Hara ◽  
Kazuo Nakajima
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Phase Variation ◽  
Excimer Laser Irradiation ◽  
Amorphous Si

scholarly journals Preparation and Properties of Superconducting thin Films by Excimer Laser Ablation

1990 ◽  
Vol 191 ◽  
Author(s):  
Michael E. Geusic ◽  
Alan F. Stewart ◽  
Larry R. Pederson ◽  
William J. Weber ◽  
Kenneth R. Marken ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Laser Energy ◽  
Substrate Surface ◽  
Xrd Analysis ◽  
Zero Field ◽  
Superconducting Transition ◽  
X Ray Diffraction ◽  
Excimer Laser Ablation

ABSTRACTExcimer laser ablation with an in situ heat treatment was used to prepare high quality superconducting YBa2Cu3O7−x thin films on (100)-SrTiO3 and (100)-LaAlO3 substrates. A pulsed excimer laser (XeCl; 308 nm) was used to ablate a rotating, bulk YBa2Cu3O7−x target at a laser energy density of 2–3 J/cm2. Based on four-probe dc resistance measurements, the films exhibited superconducting transition temperatures (Tc, midpoint) of 88 and 87K with 2K (90–10%) transition widths for SrTiO3 and LaAlO3, respectively. Transport critical current densities (Jc) measured at 77K were 2 × 106 and 1 × 106 A/cm2 in zero field for SrTiO3 and LaAlO3, respectively. X-ray diffraction (XRD) analysis showed the films to be highly oriented, with the c-axis perpendicular to the substrate surface.

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