scholarly journals Favourable tuning of optical absorbance, bandgap and surface roughness of ZnO thin films by C ion implantation at the critical angle

2022 ◽  
Vol 7 ◽  
pp. 100189
Author(s):  
Rajesh V. Hariwal ◽  
Hitendra K. Malik ◽  
Ambika Negi ◽  
K. Asokan
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Ion Implantation ◽  
Critical Angle ◽  
Zno Thin Films ◽  
Optical Absorbance

P-type ZnO thin films achieved by N+ ion implantation through dynamic annealing process

2012 ◽  
Vol 101 (11) ◽  
pp. 112101 ◽  
Author(s):  
M. A. Myers ◽  
M. T. Myers ◽  
M. J. General ◽  
J. H. Lee ◽  
L. Shao ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Annealing Process ◽  
Zno Thin Films ◽  
P Type

Influence of Li ion implantation on LO phonon broadening and bandgap opening in ZnO thin films

2019 ◽  
Vol 806 ◽  
pp. 1138-1145 ◽  
Author(s):  
S.K. Das ◽  
Gopal K. Pradhan ◽  
Prabal Dev Bhuyan ◽  
Sanjeev K. Gupta ◽  
Satyaprakash Sahoo
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Zno Thin Films ◽  
Li Ion

Decrease in Work Function of Boron Ion-Implanted ZnO Thin Films

2007 ◽  
Vol 7 (11) ◽  
pp. 4021-4024 ◽  
Author(s):  
Gi-Seok Heo ◽  
Sang-Jin Hong ◽  
Jong-Woon Park ◽  
Bum-Ho Choi ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Work Function ◽  
Carrier Density ◽  
Carrier Mobility ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Visible Wavelength Range ◽  
Ion Implanted

We have fabricated boron ion-implanted ZnO thin films by ion implantation into sputtered ZnO thin films on a glass substrate. An investigation of the effects of ion doses and activation time on the electrical and optical properties of the films has been made. The electrical sheet resistance and resistivity of the implanted films are observed to increase with increasing rapid thermal annealing (RTA)time, while decreasing as the ion dose increases. Without any RTA process, the variation of the carrier density is insensitive to the ion dose. With the RTA process, however, the carrier density of the implanted films increases and approaches that of the un-implanted ZnO film as the ion dose increases. On the other hand, the carrier mobility is shown to decrease with increasing ion doses when no RTA process is applied. With the RTA process, however, there is almost no change in the mobility. We have achieved the optical transmittance as high as 87% within the visible wavelength range up to 800 nm. It is also demonstrated that the work function can be engineered by changing the ion dose during the ion implantation process. We have found that the work function decreases as the ion dose increases.

ZnO Films Deposited on Various Diamond Film Substrates with Different Surface Roughness

2011 ◽  
Vol 287-290 ◽  
pp. 2347-2350
Author(s):  
Rong Fan ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Diamond Film ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Free Standing ◽  
Axis Orientation ◽  
X Ray ◽  
Force Microscopy

ZnO thin films were deposited by radio frequency (R. F.) magnetron sputtering on various diamond film substrates with different surface roughness. The influence of surface roughness on structural properties and surface morphology of ZnO thin films was investigated by X-ray diffraction (XRD) and atom force microscopy (AFM), respectively. Only on the nanocrystalline and free-standing diamond substrates, ZnO films with preferential c-axis orientation and smooth surface were obtained.

scholarly journals Effect of Gallium Incorporation on the Properties of ZnO Thin Films

2019 ◽  
Author(s):  
Sema Kurtaran ◽  
Serhat Aldağ ◽  
Göksu Öföfoğlu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Zno Thin Films ◽  
Visible Range ◽  
Zno Films ◽  
Spray Pyrolysis Method ◽  
Chemical Spray Pyrolysis ◽  
Atomic Force ◽  
Doped Zno ◽  
Ga Doping

Ga doped ZnO thin films were formed by the Ultrasonic Chemical Spray Pyrolysis method onto substrates using zinc acetate and gallium (III) nitrate hydrate as precursors. The structural, optical, surface and electrical properties were studied as a function of increasing Ga doping concentration from 0 to 6 at %. Structural studies were shown polycrystalline with a hexagonal crystal structure. The transparency in the visible range was around 85% for thin film deposited using 6 at % Ga doping. With the aim of determining surface images and surface roughness of the films atomic force microscope images were taken. Ga doping of ZnO thin films could markedly decrease surface roughness. Electrical resistivity was determined by four point method. The resistivity 2.0% Ga doped ZnO film was the lowest resistivity of 1.7 cm. In the photoluminescence measurements of the films, existence of UV and defect emission band was observed. As a result, Ga doped ZnO films have advanced properties and promising materials for solar cells.

A Systematic Study of Solution Aging Time Impact on Surface Morphology of Sol-Gel Derived ZnO Thin Films

2011 ◽  
Vol 216 ◽  
pp. 271-277 ◽  
Author(s):  
Babar Shahzad ◽  
Yang Qi
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Aging Time ◽  
Zinc Acetate Dihydrate ◽  
Sol Gel ◽  
Spherical Particles ◽  
Zno Thin Films ◽  
Polar Plane ◽  
Homogeneous Surface ◽  
Grain Distribution

Pure ZnO thin films were spin coated on glass substrates using 0.5M Zinc acetate dihydrate precursor solution and then annealed at 500°C for 2h in air to get good quality thin films. The effect of sol-aging time, from as-synthesized to 4week aged, on microstructure and morphology of ZnO thin films was investigated. X-ray diffraction spectra revealed the polycrystalline wurtzite structure preferentially oriented along the (002) polar plane with variable peak intensity. AFM analysis exposed an asymmetrical cyclic morphology transition with sol-aging time from comparatively smooth surfaces with small spherical particles to a rigid wrinkle network of a high rms surface roughness value of at～42.4nm which finally untied and evolved as homogeneous surface of uniform grain distribution after 4 weeks of aging time. The minimum surface roughness of 1.6nm was obtained for the film prepared from 24h aged solution.

p-Type Conversion of ZnO Thin Films by Plasma Immersion Ion Implantation

2009 ◽  
Vol 12 (9) ◽  
pp. H329 ◽  
Author(s):  
Shuyu Zhang ◽  
Rongqing Liang ◽  
Qiongrong Ou ◽  
Xiaojing Wu ◽  
Meifu Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Zno Thin Films ◽  
Type Conversion ◽  
Plasma Immersion Ion Implantation ◽  
P Type

EFFECTS OF Ge DOPING THROUGH ION IMPLANTATION ON THE STRUCTURAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY SOL-GEL TECHNIQUE

2007 ◽  
Vol 21 (31) ◽  
pp. 5257-5263 ◽  
Author(s):  
S. W. XUE ◽  
X. T. ZU ◽  
X. XIANG ◽  
M. Y. CHEN ◽  
W. G. ZHENG
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Implantation ◽  
Deep Level ◽  
Sol Gel ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Near Band Edge ◽  
Structural And Optical Properties

ZnO thin films were first prepared by the sol–gel process, and then Ge ions were implanted into the ZnO films. The effects of ion implantation on the structural and optical properties of the ZnO films were investigated by X-ray diffraction, photoluminescence (PL), and optical transmittance measurements. Measurement results showed that the intensity of the (002) diffraction peak was decreased and the full width at half maximum was narrowed. PL emission was greatly extinguished after Ge ion implantation. Both the near band edge (NBE) excitonic UV emission at 391 nm and the defect related deep level emission centered at 470 nm in the visible region were decreased after Ge ion implantation. NBE peak and the absorption edge were observed to have a blueshift toward higher energy.

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