Modeling of diffusion motion of In nanoparticles in a CdTe crystal during laser-induced doping

In order to solve the problem of the ohmic contact between the crystal surface and the metal electrode in the manufacturing process of the X/γ-ray detector, this paper uses a laser to probe the doping process of In/CdTe crystals in different media. In this experiment, the Traveling Heater Method (THM) is used to obtain CdTe(111) crystals that meet the requirements (ρ >109Ω∙cm). In and Au materials are respectively coated on the surface of the crystal sample by the vacuum thermal evaporation method to obtain the crystal sample meeting the requirements. The high-resistance p-type CdTe crystal of a relatively thick In film is irradiated with nanosecond laser pulses, the In film is used as an n-type doping source and as an electrode after laser irradiation.

Математическое моделирование процесса выращивания монокристалла CdTe методом Обреимова--Шубникова

Modeling the growth of CdTe crystal modified method Obreimov Shubnikov-using the of self-seeding techniques from the start cooling temperature (1100 °C) until the output to the mode stationary growth was carried out in this paper for the first time. Figures are given of changes in the crystallization front during crystal growth, which are confirmed by experiment using synchrotron radiation.

Effect of Cu Atoms on the Band Structure of CdTe

The effect of Cu substitution for Cd an Te atoms in CdTe crystal were examined by using ab initio calculations. Depending of location of Cu atom in the super cell, band gap changes and metallic behaviour of CdTe has been obtained.