Physecology: A Conceptual Framework to Describe Data Physicalizations in their Real-World Context

The standard definition for “physicalizations” is “a physical artifact whose geometry or material properties encode data” [ 47 ]. While this working definition provides the fundamental groundwork for conceptualizing physicalization, in practice many physicalization systems go beyond the scope of this definition as they consist of distributed physical and digital elements that involve complex interaction mechanisms. In this article, we examine how “physicalization” is part of a broader ecology—the “physecology”—with properties that go beyond the scope of the working definition. Through analyzing 60 representative physicalization papers, we derived six design dimensions of a physecology: (i) represented data type, (ii) way of information communication, (iii) interaction mechanisms, (iv) spatial input–output coupling, (v) physical setup, and (vi) audiences involved. Our contribution is the extension of the definition of physicalization to the broader concept of “physecology,” to provide conceptual clarity on the design of physicalizations for future work.

β-Ga2O3 Used as a Saturable Sbsorber to Realize Passively Q-Switched Laser Output

β-Ga2O3 crystals have attracted great attention in the fields of photonics and photoelectronics because of their ultrawide band gap and high thermal conductivity. Here, a pure β-Ga2O3 crystal was successfully grown by the optical floating zone (OFZ) method, and was used as a saturable absorber to realize a passively Q-switched all-solid-state 1 μm laser for the first time. By placing the as-grown β-Ga2O3 crystal into the resonator of the Nd:GYAP solid-state laser, Q-switched pulses at the center wavelength of 1080.4 nm are generated under a output coupling of 10%. The maximum output power is 191.5 mW, while the shortest pulse width is 606.54 ns, and the maximum repetition frequency is 344.06 kHz. The maximum pulse energy and peak power are 0.567 μJ and 0.93 W, respectively. Our experimental results show that the β-Ga2O3 crystal has great potential in the development of an all-solid-state 1 μm pulsed laser.

2.58 kW Narrow Linewidth Fiber Laser Based on a Compact Structure with a Chirped and Tilted Fiber Bragg Grating for Raman Suppression

We report a high power, narrow linewidth fiber laser based on oscillator one-stage power amplification configuration. A fiber oscillator with a center wavelength of 1080 nm is used as the seed, which is based on a high reflection fiber Bragg grating (FBG) and an output coupling FBG of narrow reflection bandwidth. The amplifier stage adopted counter pumping. By optimizing the seed and amplifier properties, an output laser power of 2276 W was obtained with a slope efficiency of 80.3%, a 3 dB linewidth of 0.54 nm and a signal to Raman ratio of 32 dB, however, the transverse mode instability (TMI) began to occur. For further increasing the laser power, a high-power chirped and tilted FBG (CTFBG) was inserted between the backward combiner and the output passive fiber, experimental results showed that both the threshold of Stimulated Raman scattering (SRS) and TMI increased. The maximum laser power was improved to 2576 W with a signal to Raman ratio of 42 dB, a slope efficiency of 77.1%, and a 3 dB linewidth of 0.87 nm. No TMI was observed and the beam quality factor M2 maintained about 1.6. This work could provide a useful reference for obtaining narrow-linewidth high-power fiber lasers with high signal to Raman ratio.

β-Ga2O3 Used as a Saturable Absorber to Realize Passively Q-Switched Laser Output

β-Ga2O3 crystal have attracted great attentions in the fields of photonics and photoelectronics because of its ultra wide-band gap and high thermal conductivity. Here, pure β-Ga2O3 crystal was successfully grown by optical floating zone (OFZ) method, and used as saturable absorbers to realize a passively Q-switched all-solid-state 1μm laser for the first time. By placing the as-grown β-Ga2O3 crystal into the resonator of Nd:GYAP solid-state laser, a Q-switched pulses at the center wavelength of 1080.4 nm are generated under a output coupling of 10%. The maximum output power is 191.5 mW while the shortest pulse width is 606.54 ns, and the maximum repetition frequency is 344.06 kHz. The maximum pulse energy and peak power are 0.567 μJ and 0.93 W, respectively. Our experimental results show that β-Ga2O3 crystal has great potential in the development of all-solid-state 1μm pulsed laser.

Dynamic power dissipation of basic logic gates

In this thesis, a model is proposed to estimate the dynamic power dissipation of CMOS logic gate that is loaded with identical logic gates. The proposed model is based on parsitic capacitance, input capacitance and input-to-output coupling capacitance of the gate. Also, model takes into account transistor width and has a second order relation with fanout. Using 0.13um CMOS technology and netlist (Cadence), basic logic gates are designed and loaded by identical basic logic gates. Basic logic gates dynamic power are simulated and compared with the calculated values of proposed model over a range of transistor sizes and capacitive load condition. The proposed model shows a good agreement with the simulated value of dynamic power dissipation of basic logic gates that are loaded by identical basic logic gates.

Dynamic power dissipation of basic logic gates

In this thesis, a model is proposed to estimate the dynamic power dissipation of CMOS logic gate that is loaded with identical logic gates. The proposed model is based on parsitic capacitance, input capacitance and input-to-output coupling capacitance of the gate. Also, model takes into account transistor width and has a second order relation with fanout. Using 0.13um CMOS technology and netlist (Cadence), basic logic gates are designed and loaded by identical basic logic gates. Basic logic gates dynamic power are simulated and compared with the calculated values of proposed model over a range of transistor sizes and capacitive load condition. The proposed model shows a good agreement with the simulated value of dynamic power dissipation of basic logic gates that are loaded by identical basic logic gates.