Unidirectional single mode lasing realization and temperature induced mode switching in asymmetric GaN coupled cavities

Effective lasing mode control and unidirectional coupling of semiconductor microlasers are vital to boost their applications in optical interconnects, on-chip communication and bio-sensors. In this paper, symmetric and asymmetric GaN...

Frequency-Mixing Lasing Mode at European XFEL

We demonstrate generation of X-ray Free-Electron Laser (XFEL) pulses in frequency mixing mode at the SASE3 line of the European XFEL. The majority of the SASE3 FEL segments are tuned at two frequencies ω1 and ω2 following an alternate pattern. Leveraging on non-linearities generated through longitudinal dispersion in the system, we obtain electron bunching at a frequency difference ωFM=ω2−ω1. FEL amplification at ωFM follows in a few last radiator segments. We report on the generation of frequency mixing at photon energies between 500 eV and 1100 eV with pulse energies, depending on the length of the radiator, in the mJ level. This method allows generating low photon energies in cases where the FEL runs at high electron energy and the target photon energy cannot be reached in the main undulator, with the simple addition of a short, custom-made afterburner.