scholarly journals Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs

2019 ◽  
Vol 40 (6) ◽  
pp. 870-873 ◽  
Author(s):  
Alexander Makarov ◽  
Ben Kaczer ◽  
Philippe Roussel ◽  
Adrian Chasin ◽  
Alexander Grill ◽  
...  
Keyword(s):  
Stochastic Modeling ◽  
Hot Carrier ◽  
Random Dopants ◽  
The Impact ◽  
Hot Carrier Degradation

THE IMPACT OF DIFFERENT HOT-CARRIER-DEGRADATION COMPONENTS ON THE OPTIMIZATION OF SUBMICRON n-CHANNEL LDD TRANSISTORS

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-787-C4-790
Author(s):  
P. T.J. BIERMANS ◽  
T. POORTER ◽  
H. J.H. MERKS-EPPINGBROEK
Keyword(s):  
Hot Carrier ◽  
The Impact ◽  
Hot Carrier Degradation

Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs

2019 ◽  
Author(s):  
A. Makarov ◽  
B. Kaczer ◽  
P. Roussel ◽  
A. Chasin ◽  
M. Vandemaele ◽  
...  
Keyword(s):  
Simulation Study ◽  
Hot Carrier ◽  
Random Dopants ◽  
Random Traps ◽  
Hot Carrier Degradation

The impact of gate to drain spacing on hot-carrier degradation in sub-100nm Ni–Pt salicidation FinFETs

2015 ◽  
Vol 114 ◽  
pp. 167-170
Author(s):  
Seung Min Lee ◽  
Hi-Deok Lee ◽  
Injo Ok ◽  
Jungwoo Oh
Keyword(s):  
Hot Carrier ◽  
Drain Spacing ◽  
The Impact ◽  
Hot Carrier Degradation
Sign in / Sign up

Export Citation Format

Share Document