scholarly journals Influence of QD array positioning in GaAs solar cell p-n junction on their photoelectric characteristics

2021 ◽  
Vol 2103 (1) ◽  
pp. 012192
Author(s):  
R A Salii ◽  
M A Mintairov ◽  
S A Mintairov ◽  
M V Nakhimovich ◽  
M Z Shvarts ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Vapor Phase ◽  
Open Circuit Voltage ◽  
Voltage Drop ◽  
Open Circuit ◽  
Photoelectric Characteristics ◽  
Organic Vapor ◽  
Cell Structures ◽  
Metal Organic

Abstract In the work, the effect of In0.8Ga0.2As quantum dots position in the i-region of a GaAs solar cell on its spectral and photoelectric characteristics has been investigated. Three solar cell structures were obtained by metal-organic vapor-phase epitaxy, in which layers of quantum dots were placed in the middle of the i-region and also have been shifted to the base and the emitter. As a result, it has been shown that the solar cell with a quantum dot array shifted to the base demonstrates the smallest open-circuit voltage drop and, accordingly, a higher efficiency value.

scholarly journals Модуль фотоэлектрических преобразователей лазерного излучения (λ=1064 нм)

2019 ◽  
Vol 53 (8) ◽  
pp. 1135
Author(s):  
В.П. Хвостиков ◽  
Н.А. Калюжный ◽  
С.А. Минтаиров ◽  
Н.С. Потапович ◽  
С.В. Сорокина ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Open Circuit Voltage ◽  
Radiation Power ◽  
Open Circuit ◽  
Vapor Phase Epitaxy ◽  
Energy Transmission ◽  
Single Junction ◽  
Organic Vapor ◽  
Metal Organic ◽  
Cell Module

AbstractThe results of a study and the development of a module designed for energy transmission via atmospheric channels are presented. The four-cell module based on single-junction metamorphic InGaAs/GaAs converters grown by metal-organic vapor-phase epitaxy has an open-circuit voltage of ~3 V. It is shown that the monochromatic efficiency (at a wavelength of 1064 nm) of this module is 31.5% under exposure to a Xe-lamp with a radiation power of 1.5 W/cm^2.

GaAs Solar Cell Using an Alternate Arsenic Source

1989 ◽  
Vol 145 ◽  
Author(s):  
V. S. Sundaram ◽  
J. E. Avery ◽  
G. R. Girard ◽  
H. E. Hager ◽  
A. G. Thompson ◽  
...  
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Chemical Vapor ◽  
Open Circuit ◽  
Organic Chemical ◽  
Tertiary Butyl ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Arsenic Source

AbstractUsing an alternate arsenic source, namely, Tertiary Butyl Arsine, a concentrator GaAs solar cell has been grown in a low pressure metal organic chemical vapor deposition reactor. Under 72 sun, air mass 1.5 illumination, the cell had an open circuit voltage of 1.1 V, a fill factor of 83% and an overall efficiency of 21%.

Effect of cap-layer growth rate on morphology and luminescence of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy

2006 ◽  
Vol 100 (3) ◽  
pp. 033508 ◽  
Author(s):  
A. Michon ◽  
I. Sagnes ◽  
G. Patriarche ◽  
G. Beaudoin ◽  
M. N. Mérat-Combes ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Vapor Phase ◽  
Layer Growth ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Layer Growth Rate ◽  
Cap Layer ◽  
Metal Organic

Formation of Self-Assembled Nanometer-Scale InP Islands on Silicon Substrates

2000 ◽  
Vol 618 ◽  
Author(s):  
A.S. Bakin ◽  
D. Piester ◽  
H.-H. Wehmann ◽  
A.A. Ivanov ◽  
A. Schlachetzki ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Vapor Phase ◽  
Three Dimensional ◽  
Nanometer Scale ◽  
Silicon Substrates ◽  
Force Microscopy ◽  
Organic Vapor ◽  
Atomic Force ◽  
Metal Organic

ABSTRACTThree-dimensional islands of InP have been reproducibly grown in the Stranski-Krastanow growth mode on Si (001) and (111) by using metal-organic vapor phase epitaxy in order to obtain nanometer-scale quantum dots. Atomic-force microscopy was used to determine the morphology of the samples and to evaluate the dimensions of the islands. Formation of three-dimensional islands with densities as high as 2.5×1010 cm−2 and small sizes have been observed. The evolution of island morphology is explained in terms of strain-relaxing mechanisms at the first stages of InP/Si heteroepitaxy.

Highly Uniform and Small InP/GaInP Self-Assembled Quantum Dots Grown by Metal-Organic Vapor Phase Epitaxy

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 507-510 ◽  
Author(s):  
Hong-Wen Ren ◽  
Mitsuru Sugisaki ◽  
Jeong-Sik Lee ◽  
Shigeo Sugou ◽  
Yasuaki Masumoto
Keyword(s):  
Quantum Dots ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Self Assembled ◽  
Highly Uniform

Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy

2018 ◽  
Vol 52 (4) ◽  
pp. 497-501 ◽  
Author(s):  
D. V. Lebedev ◽  
N. A. Kalyuzhnyy ◽  
S. A. Mintairov ◽  
K. G. Belyaev ◽  
M. V. Rakhlin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Density Control ◽  
Metal Organic
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