scholarly journals Влияние электродов на параметры солнечно-слепых детекторов УФ излучения

2021 ◽  
Vol 55 (3) ◽  
pp. 264
Author(s):  
В.М. Калыгина ◽  
А.В. Цымбалов ◽  
А.В. Алмаев ◽  
Ю.С. Петрова
Keyword(s):  
Ultraviolet Radiation ◽  
Radio Frequency ◽  
Gallium Oxide ◽  
Oxide Films ◽  
Interelectrode Distance ◽  
Metal Structures ◽  
Photoelectric Characteristics ◽  
Sapphire Substrates ◽  
Radio Frequency Sputtering ◽  
Metal Semiconductor Metal

The influence of electrode topology on the electrical and photoelectric characteristics of metal/semiconductor/metal structures was investigated. Gallium oxide films were obtained by radio-frequency sputtering of a Ga2O3 target onto sapphire substrates with the (0001) orientation. Two types of electrodes were formed on the surface of the oxide films: two parallel electrodes with an interelectrode distance of 250 mkm and interdigitated ones. The distance between the "fingers" of the detectors of the second type was 50, 30, 10, and 5 mkm. Regardless of the type of contacts, the structures exhibit sensitivity to ultraviolet radiation with a wavelength of λ = 254 nm. Detectors of the second type with an interelectrode distance of 5 μm demonstrate the highest values of the photocurrent Iph = 3.8 mA and detectivity D * = 5.54⋅10^15 cmHz^0.5W^-1.

CdTe oxide films grown by radio frequency sputtering utilizing argon–nitrous oxide plasma

1994 ◽  
Vol 12 (3) ◽  
pp. 714-717 ◽  
Author(s):  
A. Zapata‐Navarro ◽  
M. Zapata‐Torres ◽  
Victor Sosa ◽  
P. Bartolo‐Perez ◽  
J. L. Peña
Keyword(s):  
Nitrous Oxide ◽  
Radio Frequency ◽  
Oxide Films ◽  
Radio Frequency Sputtering

scholarly journals Структура и свойства пленок оксида галлия, полученных высокочастотным магнетронным напылением

2019 ◽  
Vol 53 (3) ◽  
pp. 411
Author(s):  
В.М. Калыгина ◽  
Т.З. Лыгденова ◽  
В.А. Новиков ◽  
Ю.С. Петрова ◽  
А.В. Цымбалов ◽  
...  
Keyword(s):  
Activation Energy ◽  
Gallium Oxide ◽  
Oxygen Plasma ◽  
Oxide Films ◽  
Wavelength Region ◽  
Ultraviolet Region ◽  
Substrate Plane ◽  
Sapphire Substrates ◽  
Solar Blind ◽  
C 30

AbstractThe properties of gallium-oxide films produced by the radio-frequency magnetron-assisted sputtering of a β-Ga_2O_3 target with deposition onto sapphire substrates are studied. The as-deposited gallium-oxide films are polycrystalline and contain crystallites of the α and β phases. Exposure to oxygen plasma does not bring about the appearance of new crystallites but makes crystallites several times larger in average dimensions in the substrate plane. After annealing at 900°C, the crystallite size becomes twice as large as that in the unannealed film. The films not subjected to thermal annealing exhibit a high resistance at 20°C. In the range of 50–500°C, the conductivity of the samples ( G ) only slightly depends on temperature ( T ) and, as T is elevated further, exponentially increases with the activation energy 0.7–1.0 eV. After annealing of the films in argon at 900°C (30 min), the conductivity G starts to sharply increase at T ≈ 350°C. In the dependence of ln G on T   ^–1, a maximum in the range of 470–520°C and a portion of decreasing conductivity at higher temperatures are observed. The unusual temperature dependence of the conductivity after annealing is attributed to a change in the structure and phase composition of polycrystalline gallium-oxide films and, possibly, to some effects at the surface. The structures produced on insulating substrates are solar blind in the visible wavelength region and sensitive to radiation in the ultraviolet region (222 nm).

scholarly journals Солнечно-слепые детекторы УФ-излучения на основе пленок beta-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-

2020 ◽  
Vol 54 (6) ◽  
pp. 575
Author(s):  
В.М. Калыгина ◽  
А.В. Алмаев ◽  
В.А. Новиков ◽  
Ю.С. Петрова
Keyword(s):  
Phase Composition ◽  
Wavelength Range ◽  
Gallium Oxide ◽  
Oxide Films ◽  
Platinum Electrodes ◽  
Sapphire Substrates ◽  
Visible Wavelength Range ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Resistive Type

Resistive-type structures based on gallium oxide films were studied. Ga2O3 films were obtained by radio-frequency magnetron-assisted sputtering of a β-Ga2O3 (99.9999%) target onto unheated sapphire substrates with pre-deposited platinum electrodes. The structure and phase composition of the gallium-oxide films were determined. The current–voltage characteristics of the samples without and with exposure to radiation at the wavelengths λ = 254 nm were measured. It was shown that after annealing, the photocurrent increases by an order. The absence of sensitivity of the studied structures to radiation in the visible wavelength range was experimentally confirmed.

Sensing properties of Pt/Pd activated tungsten oxide films grown by simultaneous radio-frequency sputtering to reducing gases

2012 ◽  
Vol 175 ◽  
pp. 53-59 ◽  
Author(s):  
Chao Zhang ◽  
Abdelhamid Boudiba ◽  
Marie-Georges Olivier ◽  
Rony Snyders ◽  
Marc Debliquy
Keyword(s):  
Radio Frequency ◽  
Tungsten Oxide ◽  
Oxide Films ◽  
Sensing Properties ◽  
Radio Frequency Sputtering ◽  
Reducing Gases

scholarly journals Свойства резистивных структур на основе полиморфных фаз оксида галлия

2020 ◽  
Vol 46 (17) ◽  
pp. 33
Author(s):  
В.М. Калыгина ◽  
В.И. Николаев ◽  
А.В. Алмаев ◽  
А.В. Цымбалов ◽  
Ю.С. Петрова ◽  
...  
Keyword(s):  
Electric Field ◽  
Vapor Phase ◽  
Gallium Oxide ◽  
Strong Electric Field ◽  
Switching Effect ◽  
Mixed Structure ◽  
Two Phase ◽  
Metal Structures ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

The influence of UV radiation and a strong electric field on the I–V characteristics of resistive structures based on polymorphic films of gallium oxide (Ga2O3) is considered. Ga2O3 films were deposited by the method of chloride vapor-phase epitaxy (HVPE) on smooth and structured sapphire substrates with a baseline (0001) orientation. α-Ga2O3 films were produced on smooth substrates, and deposition on patterned sapphire substrates templates produced a mixed structure containing both α-Ga2O3 and ε-Ga2O3. The switching effect was observed in metal / Ga2O3 / metal structures based on two-phase films. Structures pass from a low-resistance (LR) state to a high-resistance (HR) state when exposed to a strong electric field and radiation with λ = 254 nm.

scholarly journals Optical Recording Ga-In-oxide Films Prepared by Radio-Frequency Sputtering.

Shinku ◽  
1999 ◽  
Vol 42 (3) ◽  
pp. 317-320
Author(s):  
Takanori AOKI ◽  
Hideki KAIMI ◽  
Akio SUZUKI ◽  
Tatsuhiko MATSUSHITA ◽  
Masahiro OKUDA
Keyword(s):  
Radio Frequency ◽  
Oxide Films ◽  
Optical Recording ◽  
Radio Frequency Sputtering
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