Micro-Vortex Generators on Transonic Convex-Corner Flow

A convex corner models the upper surface of a deflected flap and shock-induced boundary layer separation occurs at transonic speeds. This study uses micro-vortex generators (MVGs) for flow control. An array of MVGs (counter-rotating vane type, ramp type and co-rotating vane type) with a height of 20% of the thickness of the incoming boundary layer is installed upstream of a convex corner. The surface pressure distributions are similar regardless of the presence of MVGs. They show mild upstream expansion, a strong favorable pressure gradient near the corner’s apex and downstream compression. A corrugated surface oil flow pattern is observed in the presence of MVGs and there is an onset of compression moving downstream. The counter-rotating vane type MVGs produce a greater reduction in peak pressure fluctuations and the ramp type decreases the separation length. The presence of MVGs stabilizes the shock and shock oscillation is damped.

The Effect of Vortex Generators on Shock-Induced Boundary Layer Separation in a Transonic Convex-Corner Flow

Deflected control surfaces can be used as variable camber control in different flight conditions, and a convex corner resembles a simplified configuration for the upper surface. This experimental study determines the presence of passive vortex generators, VGs (counter-rotating vane type), on shock-induced boundary layer separation for transonic convex-corner flow. The mean surface pressure distributions in the presence of VGs for h/δ = 0.2 and 0.5 are similar to those for no flow control. If h/δ = 1.0 and 1.5, there is an increase in the amplitude of the mean surface pressure upstream of the corner’s apex, which corresponds to greater device drag and less downstream expansion. There is a decrease in peak pressure fluctuations as the value of h/δ increases, because there is a decrease in separation length and the frequency of shock oscillation. The effectiveness of VGs also depends on the freestream Mach number. For M = 0.89, there is an extension in the low-pressure region downstream of a convex corner, because there is greater convection and induced streamwise vorticity. VGs with h/δ ≤ 0.5 are preferred if deflected control surfaces are used to produce lift.

Global Visualization of Compressible Swept Convex-Corner Flow Using Pressure-Sensitive Paint

This study used pressure-sensitive paint (PSP) and determined the surface pressure distributions for a compressible swept convex-corner flow. The freestream Mach numbers were 0.64 and 0.83. The convex-corner angle and swept angle were, respectively, 10–17° and 5–15°. Expansion and compression near the corner apex were clearly visualized. For the test case of shock-induced boundary layer separation, there were greater spanwise pressure gradient and curved shocks. The acquired PSP data agree with the experimental data measured using the Kulite pressure transducers for a subsonic expansion flow. For a transonic expansion flow, the discrepancy was significant. The assumption of a constant recovery factor is not valid in the separation region, and temperature correction for PSP measurements is required.

Etching of Uncompensated Convex Corners with Sides along and in 25 wt% TMAH at 80 °C

This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations.

Residual stress in underlying silicon at the fixed end of SiO2 microcantilevers — A micro-Raman study

In this work, nature of the residual stress developed in the convex corners created in underlying Si at the fixed end of SiO2 microantilevers (MCs) fabricated by wet chemical etching method was investigated using micro-Raman spectroscopy with visible excitation. It revealed the presence of tensile stress near the sharp edge of the convex corner and is attributed to the localized stress generated in the neighborhood of the discontinuities, acting as stress concentration region. Residual stress estimated by micro-Raman technique across the convex corner was also validated by FEM simulations. Micro-Raman also revealed the presence of tensile stress on the etched Si surface, which is explained on the basis of stress induced by native oxide shells covering the etched features.