Cu2ZnSnS4 formation by co-evaporation and subsequent annealing in S-flux using molecular beam epitaxy system

2017 ◽  
Vol 638 ◽  
pp. 312-317 ◽  
Author(s):  
Yosuke Shimamune ◽  
Kazuo Jimbo ◽  
Genki Nishida ◽  
Masanari Murayama ◽  
Akiko Takeuchi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Subsequent Annealing ◽  
Molecular Beam Epitaxy System

scholarly journals A portable molecular beam epitaxy system for in situ x-ray investigations at synchrotron beamlines

2012 ◽  
Vol 83 (10) ◽  
pp. 105112 ◽  
Author(s):  
T. Slobodskyy ◽  
P. Schroth ◽  
D. Grigoriev ◽  
A. A. Minkevich ◽  
D. Z. Hu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray ◽  
Molecular Beam Epitaxy System ◽  
Synchrotron Beamlines

Growth of Ni3Ga2, NiGa and Ni2Ga3 on GaAs (001) and (111) in a molecular beam epitaxy system

1989 ◽  
Vol 95 (1-4) ◽  
pp. 427-430 ◽  
Author(s):  
A. Guivarc'h ◽  
J. Caulet ◽  
B. Guenais ◽  
Y. Ballini ◽  
R. Guérin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy System

Epitaxial τMnAl/AlAs/GaAs Heterostructures with Perpendicular Magnetization

1991 ◽  
Vol 231 ◽  
Author(s):  
T. Sands ◽  
J.P. Harbison ◽  
S.J. Allen ◽  
M.L Leadbeater ◽  
T.L Cheeks ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Subsequent Annealing ◽  
Perpendicular Magnetization ◽  
Gaas Substrates ◽  
Extraordinary Hall Effect ◽  
Hysteretic Characteristics

AbstractEpitaxial films of ferromagnetic τMnAl with perpendicular magnetization have been grown on {100}AlAs/GaAs substrates by molecular beam epitaxy. A multistep growth procedure involving the formation of a template followed by codeposition and subsequent annealing yields thin epitaxial τMnA1 films that exhibit the extraordinary Hall effect with nearly ideal hysteretic characteristics.

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