Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy

We have grown homoepitaxial GaN nanowall networks on GaN template using an ultra-high vacuum laser assisted molecular beam epitaxy system by ablating solid GaN target under a constant r.f. nitrogen plasma ambient.

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An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010010648x ◽

1988 ◽

Vol 46 ◽

pp. 884-885

Author(s):

D. Loretto ◽

J. M. Gibson ◽

S. M. Yalisove ◽

R. T. Tung

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Defect Density ◽

High Vacuum ◽

Ultra High Vacuum ◽

Ex Situ ◽

Metal Base ◽

In Situ Experiments ◽

Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

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Combinatorial laser molecular beam epitaxy system integrated with specialized low-temperature scanning tunneling microscopy

Review of Scientific Instruments ◽

10.1063/1.5119686 ◽

2020 ◽

Vol 91 (1) ◽

pp. 013904 ◽

Cited By ~ 1

Author(s):

Ge He ◽

Zhongxu Wei ◽

Zhongpei Feng ◽

Xiaodong Yu ◽

Beiyi Zhu ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Scanning Tunneling Microscopy ◽

Molecular Beam ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Laser Molecular Beam Epitaxy ◽

Molecular Beam Epitaxy System ◽

Temperature Scanning

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In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-102-355 ◽

1987 ◽

Vol 102 ◽

Cited By ~ 1

Author(s):

M. Cerullo ◽

Julia M. Phillips ◽

M. Anzlowar ◽

L. Pfeiffer ◽

J. L. Batstone ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam ◽

High Vacuum ◽

Processing Technique ◽

Ultra High Vacuum ◽

On Line ◽

High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

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Ultra-high-vacuum epitaxial growth of MgB2(0001) thin films on Mg(0001) via molecular beam epitaxy

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/16/33/005 ◽

2004 ◽

Vol 16 (33) ◽

pp. S3451-S3458 ◽

Cited By ~ 3

Author(s):

R Macovez ◽

C Cepek ◽

M Sancrotti ◽

A Goldoni ◽

L Petaccia ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Vacuum ◽

Ultra High Vacuum

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Amorphous Silicon Films and Superlattices Grown by Molecular Beam Epitaxy: An Optical Analysis

MRS Proceedings ◽

10.1557/proc-715-a19.1 ◽

2002 ◽

Vol 715 ◽

Cited By ~ 2

Author(s):

D. J. Lockwood ◽

J.-M. Baribeau ◽

M. Noël ◽

J. C. Zwinkels ◽

B. J. Fogal ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Amorphous Silicon ◽

Molecular Beam ◽

Crystalline Silicon ◽

Quartz Substrate ◽

High Vacuum ◽

Impurity Content ◽

Thin Layers ◽

Silicon Films ◽

Ultra High Vacuum

AbstractWe produce a novel form of amorphous silicon through ultra-high-vacuum molecular beam epitaxy. By depositing silicon atoms onto a fused quartz substrate at temperatures between 98 and 335°C, we obtain a silicon-based material that lacks the characteristic periodicity of crystalline silicon but nevertheless has 98% of its density. The impurity content of this material is studied through infrared and secondary ion mass spectroscopies. The primary impurity found is oxygen, with hydrogen and carbon atoms also being found at trace levels. The Raman spectra of the amorphous silicon films are measured and the results, as they relate to the presence of disorder, are interpreted. We also use this molecular beam epitaxy method to fabricate a number of amorphous silicon superlattices, comprised of thin layers of amorphous silicon separated with even thinner layers of SiO2. The optical properties of the films and superlattices are contrasted.

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