Investigation and characterization of the annealing effects on the ferroelectric behavior of PLD BaTiO3

ABSTRACTSome renarks about the mechanism for dynamic annealing during high dose rate P implantation of Si are reported. TEM observations and RBS channeling measurements show that the ion bombardment enhances the amorphous to crystalline transformation in the temperature range 200 ≤ T ≤ 600°C. It is found that the ratio between the observed recrystalli-zation velocity and the thermal SPE velocity decreases with increasing temperature. This indicates that a transition temperature must exist between the ion-assisted recrystallization regime and the ?lermal SPE regime. For the energy (100 keV) and the dose rate (60,uA/cm2) used in our experiments the transition temperature is about 700°C.

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Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties

Applied Physics Letters ◽

10.1063/1.1448384 ◽

2002 ◽

Vol 80 (7) ◽

pp. 1249-1251 ◽

Cited By ~ 129

Author(s):

Yong Jai Cho ◽

N. V. Nguyen ◽

C. A. Richter ◽

J. R. Ehrstein ◽

Byoung Hun Lee ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

High Temperature ◽

Spectroscopic Ellipsometry ◽

High Temperature Annealing ◽

High K ◽

Annealing Effects ◽

High K Dielectric

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Characterization of Thermal Annealed Bi Implanted Silica

MRS Proceedings ◽

10.1557/proc-279-327 ◽

1992 ◽

Vol 279 ◽

Cited By ~ 2

Author(s):

S. H. Morgan ◽

D. O. Henderson ◽

Z. Pan ◽

R. H. Magruder ◽

R. A. Zuhr

Keyword(s):

Optical Absorption ◽

Thermal Annealing ◽

High Purity ◽

Reflection Spectra ◽

Infrared Reflectance ◽

Infrared Reflection ◽

Before And After ◽

Annealing Effects

ABSTRACTOptical and infrared reflection spectra for Bi implanted silica are reported as a function of dose and thermal annealing. A series of high purity silica samples were implanted with Bi ions at an energy of 350 KeV. Doses were 1 × 1016 and 1.0 × 1017ions/cm2 at 5μamps/cm2. The samples were subsequently thermally annealed at 400, 600 and 800 C. The optical absorption from 6.2 to 1.8 eV and infrared reflectance from 5000 to 450 cm”−1 were measured before and after annealing. Effects of thermal annealing are strongly dependent on Bi content.

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Microstructure Characterization of Amorphous Silicon-Nitride Films by Effusion Measurements

MRS Proceedings ◽

10.1557/proc-0910-a06-05 ◽

2006 ◽

Vol 910 ◽

Cited By ~ 6

Author(s):

Wolfhard Beyer ◽

H.F.W. Dekkers

Keyword(s):

Solar Cells ◽

Atomic Hydrogen ◽

Antireflection Coating ◽

Compact Structure ◽

Silicon Nitride Films ◽

Si Solar Cells ◽

Defect Passivation ◽

Annealing Effects ◽

Substrate Temperatures

AbstractThe microstructure of a-Si:N:H films, which are applied as antireflection coating and for defect passivation in multicrystalline silicon (mc-Si) solar cells, was studied by gas effusion experiments. The results show for as-deposited material of low substrate temperatures (TS = 200 – 300°C) a predominant diffusion of molecular hydrogen for temperatures up to 800°C in agreement with the presence of interconnected openings (voids). At higher substrate temperatures, the material has a more compact structure and atomic hydrogen is the dominant diffusing species in the accessible temperature range. Annealing effects were also studied. The results are consistent with the concept that atomic hydrogen released from the a-Si:N:H coating serves for defect passivation in μc-Si solar cells.

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