Abstract
We explored the mixing effect of 10B isotopes and boron (B) or nitrogen (N) vacancies on the atomic vibrational properties of (10, 0) single-wall boron nitride nanotubes (BNNT). The forced oscillation technique was employed to evaluate the phonon modes for the entire range (0-100%) of 10B isotopes and atomic vacancy densities ranging from 0 to 30%. With increasing isotope densities, we noticed a blue-shift of the Raman active A1 phonon peak, whereas an increased density of mixed or independent B and N vacancies resulted in the emergence of a new low-frequency peak and the annihilation of the A1 peak in the phonon density-of-states. High-energy optical phonons were localized as a result of both 10B isotopes and the presence of mixing defects. We generated typical mode patterns for different defects to show the phonon localization processes due to the defects. We found an asymmetrical nature of the localization length with increasing 10B isotope content, which corresponds well with the isotope inherited localization length of carbon nanotubes and mono-layer graphene. The localization length falls abruptly with the increase in concentration of both atomic vacancies (B or N) and mixing defects (10B isotope and vacancies). These findings are critical for understanding heat conduction and nanoscopic vibrational investigations like tip-enhanced Raman spectra in BNNT, which can map local phonon energies.