Micromechanical Force Sensor Using the Stress–Impedance Effect of Soft Magnetic FeCuNbSiB

By using the stress–impedance (SI) effect of a soft magnetic amorphous FeCuNbSiB alloy, a micromachined force sensor was fabricated and characterized. The alloy was used as a sputtered thin film of 500 nm thickness. To clarify the SI effect in the used material as a thin film, its magnetic and mechanical properties were first investigated. The stress dependence of the magnetic permeability was shown to be caused by the used transducer effect. The sputtered thin film also exhibited a large yield strength of 983 GPa. Even though the fabrication technology for the device is very simple, characterization revealed a gauge factor (GF) of 756, which is several times larger than that achieved with conventional transducer effects, such as the piezoresistive effect. The fabricated device shows great application potential as a tactile sensor.

A Simplified Model for Optical Systems with Random Phase Screens

A first-order optical system with arbitrary multiple masks placed at arbitrary positions is the basic scheme of various optical systems. Generally, masks in optical systems have a non-shift invariant (SI) effect; thus, the individual effect of each mask on the output cannot be entirely separated. The goal of this paper is to develop a technique where complete separation might be achieved in the common case of random phase screens (RPSs) as masks. RPSs are commonly used to model light propagation through the atmosphere or through biological tissues. We demonstrate the utility of the technique on an optical system with multiple RPSs that model random scattering media.

Solidification Pattern of Si-Alloyed, Inoculated Ductile Cast Irons, Evaluated by Thermal Analysis

The solidification cooling curve itself as well as its first derivative, and related temperatures, reported to the calculated equilibrium temperatures in stable and metastable solidification systems, are used to predict the solidification characteristics of the cast iron. Silicon, as the most representative cast iron element, and inoculation, as graphitizing metallurgical treatment, have a major influence on the transition from the liquid to the solid state. Six experimental programs are performed, with Si content typically for non-alloyed (<3.0% Si), low (3.0–3.5% Si) and medium alloyed (4.5–5.5% Si) ductile cast irons, as Si-content increasing, and inoculation simultaneous effects. Silicon is an important influencing factor, but the base and minor elements also affect the equilibrium eutectic temperatures, much more in the Fe-C-Si-Xi stable system (15–20 °C) than in the metastable system (5–10 °C), comparing with their calculation based only on a Si effect (Fe-C-Si system). The highest positive effect of inoculation is visible in non-Si alloyed cast irons (2.5% Si): 9–15 °C for the eutectic reaction and 3 to 4 times increased at the end of solidification (37–47 °C). Increased Si content decreases inoculation power to 7–9 °C for low alloying grade (up to 3.5% Si), with the lowest contribution at more than 4.5% Si (0.3–2.0 °C). 2.5–3.5% Si ductile cast irons are more sensitive to high solidification undercooling, especially at the end of solidification (but with a higher efficiency of inoculation), compared to 4.5–5.5% Si ductile cast irons, at a lower undercooling level, and at lower inoculation contribution, as well.

Time Course of Sleep Inertia Dissipation in Memory Tasks

Sleep inertia (SI) refers to a complex psychophysiological phenomenon, observed after awakening, that can be described as the gradual recovery of waking-like status. The time course of cognitive performance dissipation in an everyday life condition is still unclear, especially in terms of the sleep stage at awakening (REM or NREM-stage 2) and the relative effects on performance. The present study aimed to investigate the SI dissipation in different memory performances upon spontaneous morning awakening after uninterrupted nighttime sleep. Eighteen young adults (7 females; mean age 24.9 ± 3.14 years) spent seven non-consecutive nights (one baseline, three REM awakenings and three St2 awakenings) in the laboratory under standard polysomnographic (PSG) control. Participants were tested after three REM awakenings and three St2 awakenings, and three times at 11:00 a.m. as a control condition. In each testing session, participants filled in the Global Vigor and Affect Scale and carried out one memory task (episodic, semantic, or procedural task). For each condition, participants were tested every 10 min within a time window of 80 min. In accordance with previous studies, SI affected subjective alertness throughout the entire time window assessed. Moreover, SI significantly affected performance speed but not accuracy in the semantic task. With reference to this task, the SI effect dissipated within 30 min of awakening from REM, and within 20 min of awakening from St2. No significant SI effect was observed on episodic or procedural memory tasks.

Cadmium, silicon and nutrient accumulation by maize plants grown on a contaminated soil amended with a diatomaceous Earth fertilizer

ABSTRACT: Given that cadmium (Cd) poses high persistence in the environment and toxicity to humans, strategies to either decrease or avoid Cd entry in the trophic chain are fundamental to secure food safety. Here we assessed the effects of applying rates of Si as a diatomaceous Earth-based fertilizer on the amelioration of Cd toxicity towards maize plants grown on soil with or without pH correction. Besides determining Si and Cd concentrations, we also evaluated plant accumulation of nutrients (N, P, K, Ca, Mg, Fe, Mn, Cu, and Zn) as a function of Si doses applied to the soil. Results showed that both the Si application and the liming had a positive effect on biomass and nutrient uptake, but the Si effect on plants’ performance took place irrespectively to the soil pH. Silicon ameliorated Cd phytotoxicity in both limed and unlimed soils by decreasing Cd concentration in shoots and improving biomass yield and plant nutrition. Silicon alleviation of Cd-inhibitory effects on plants was more effective in the unlimed soil owing to the higher Cd availability in acidic soils. Also, taking into account the reduced transfer of Cd to shoots driven by Si, lower Cd accumulation in maize grains is likely, with implications to food safety. So, further studies on field conditions are warranted.

Silicon Use in the Integrated Disease Management of Wheat: Current Knowledge

Silicon (Si) is a benefic element for higher plants such as wheat (Triticum aestivum) in which it is accumulated in the shoot tissues. In this crop, leaf diseases and spike diseases are the cause of yield losses, and therefore several studies had been conducted under field and greenhouse conditions to demonstrate that plants supplied with Si reduced most of the diseases damage due to the amelioration of the plant defenses. However, the benefits of Si depend on its accumulation in the plant’s tissue, which is influenced by the availability of the element in the soil as well as the up-take ability of the wheat cultivar. In this chapter we present the current knowledge about the mechanisms of Si absorption and its accumulation in different tissues of the wheat plant, the most studied options for silicate fertilization, and the benefits of Si on grain yield. We also present some insight of the effect of Si-supply in wheat on the reduction of main leaf and ear diseases, bringing evidence and explanation of the defense mechanisms involved. In addition, we provide an overview of the Si effect on the physiology (gas exchange, chlorophyll a fluorescence and carbohydrate metabolism) of the wheat plant. Finally, questions have been raised about the Si uses as fertilizer that still needs to be answered. We recognized that some studies have enhanced our understanding of Si providing evidence of the Si use as disease management strategy, but further research is needed to make the Si uses a simple task for wheat growers under field condition.

Simple Device to Measure Pressure Using the Stress Impedance Effect of Amorphous Soft Magnetic Thin Film

A simple micro-machined pressure sensor, based on the stress-impedance (SI) effect, was fabricated herein using typical micro-fabrication technologies. To sense pressure, a 1-µm thin, soft magnetic metallic film of FeSiB was sputtered and used as a diaphragm. Its electrical response (impedance change) was measured under pressure in a frequency band from 5 to 500 MHz. A lumped-element equivalent electric circuit was used to separate the impedance of the soft magnetic metal from other parasitic elements. The impedance change clearly depended on the applied pressure. It was also shown that the impedance change could be explained by a change in relative permeability, according to the theory of the SI effect. The radial stress in the diaphragm and the relative permeability exhibited a linear relationship. At a measurement frequency of 200 MHz, the largest sensor response, with a gauge factor of 385.7, was found. It was in the same order as the conventional sensors. As the proposed device is very simple, it has the potential for application as a cheap pressure sensor.