Magnetotransport signatures of Weyl physics and discrete scale invariance in the elemental semiconductor tellurium

The study of topological materials possessing nontrivial band structures enables exploitation of relativistic physics and development of a spectrum of intriguing physical phenomena. However, previous studies of Weyl physics have been limited exclusively to semimetals. Here, via systematic magnetotransport measurements, two representative topological transport signatures of Weyl physics, the negative longitudinal magnetoresistance and the planar Hall effect, are observed in the elemental semiconductor tellurium. More strikingly, logarithmically periodic oscillations in both the magnetoresistance and Hall data are revealed beyond the quantum limit and found to share similar characteristics with those observed in ZrTe5and HfTe5. The log-periodic oscillations originate from the formation of two-body quasi-bound states formed between Weyl fermions and opposite charge centers, the energies of which constitute a geometric series that matches the general feature of discrete scale invariance (DSI). Our discovery reveals the topological nature of tellurium and further confirms the universality of DSI in topological materials. Moreover, introduction of Weyl physics into semiconductors to develop “Weyl semiconductors” provides an ideal platform for manipulating fundamental Weyl fermionic behaviors and for designing future topological devices.

Efficient solar-driven nitrogen fixation over an elemental phosphorus photocatalyst

An elemental semiconductor (red phosphorus) based photocatalyst was developed for nitrogen fixation under full-spectrum irradiation without using any hole scavenger.