Electrical Properties of Bottom Gate Poly-Si TFTs by NiSi2 Seed-Induced Lateral Crystallization and Its Applications

MRS Advances ◽

10.1557/adv.2016.509 ◽

2016 ◽

Vol 1 (50) ◽

pp. 3429-3433

Author(s):

Sol Kyu Lee ◽

Ki Hwan Seok ◽

Zohreh Kiaee ◽

Hyung Yoon Kim ◽

Hee Jae Chae ◽

...

Keyword(s):

Electrical Properties ◽

Polycrystalline Silicon ◽

Subthreshold Slope ◽

Laser Method ◽

Investment Cost ◽

Sequential Lateral Solidification ◽

Amorphous Si ◽

Lateral Crystallization ◽

Bottom Gate ◽

Steep Subthreshold Slope

ABSTRACT In this paper, the electrical properties of bottom-gate (BG) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) by NiSi2 seed-induced lateral crystallization (SILC) and its applications are presented. Sequential lateral solidification (SLS), which is one of crystallization methods, is known to have poor electrical properties of TFTs with BG structures due to problems induced by laser. Therefore, the laser method cannot be used to well-developed production line of amorphous-Si (a-Si) TFT, resulting in large initial investment cost to change fabrication procedures. On the other hand, the BG poly-Si TFT by SILC (SILC-BGPS TFT) has basically compatible process flows with that of the a-Si TFT. The SILC-BGPS TFT exhibited threshold voltage of -3.9 V, steep subthreshold slope of 130 mV/dec, a high field-effect mobility of 129 cm2/Vs , and I on /I off ratio of ∼106.

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Direct/Indirect Junction Between Channel Inversion Layer and Doped Source/Drain Region on Metal-Induced Lateral Crystallization Polycrystalline Silicon Bottom Gate TFTs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2633523 ◽

2017 ◽

Vol 64 (2) ◽

pp. 432-437

Author(s):

Ki Hwan Seok ◽

Sol Kyu Lee ◽

Hyung Yoon Kim ◽

Hee Jae Chae ◽

Yong Hee Lee ◽

...

Keyword(s):

Polycrystalline Silicon ◽

Inversion Layer ◽

Drain Region ◽

Lateral Crystallization ◽

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Effect of Dopant Concentration in Lightly Doped Drain Region on the Electrical Properties of N-Type Metal Induced Lateral Crystallization Polycrystalline Silicon Thin Film Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.10mc13 ◽

2013 ◽

Vol 52 (10S) ◽

pp. 10MC13 ◽

Author(s):

Se Wan Son ◽

Chang Woo Byun ◽

Yong Woo Lee ◽

Seung Jae Yun ◽

Ashkan Vakilipour Takaloo ◽

...

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Dopant Concentration ◽

Silicon Thin Film ◽

Drain Region ◽

Lateral Crystallization ◽

Lightly Doped Drain

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Thermal Stress Effects on the Electrical Properties of p-Channel Polycrystalline-Silicon Thin-Film Transistors Fabricated via Metal-Induced Lateral Crystallization

IEEE Transactions on Semiconductor Manufacturing ◽

10.1109/tsm.2014.2373353 ◽

2015 ◽

Vol 28 (1) ◽

pp. 35-40 ◽

Author(s):

Jae Hyo Park ◽

Ki Hwan Seok ◽

Zohreh Kiaee ◽

Hyung Yoon Kim ◽

Hee Jae Chae ◽

...

Keyword(s):

Thin Film ◽

Thermal Stress ◽

Electrical Properties ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Silicon Thin Film ◽

Stress Effects ◽

Lateral Crystallization

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Novel L-Shaped Dual-Gate Structure of Polycrystalline Silicon Thin-Film Transistors for the Reduction of the Kink Current in Sequential Lateral Solidification or Continuous Wave Laser Method

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.4378 ◽

2006 ◽

Vol 45 (5B) ◽

pp. 4378-4383 ◽

Author(s):

Hee-Sun Shin ◽

Sang-Hoon Jung ◽

Woo-Jin Nam ◽

Won-Kyu Lee ◽

Hye-Jin Lee ◽

...

Keyword(s):

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Laser Method ◽

Gate Structure ◽

Sequential Lateral Solidification ◽

Dual Gate ◽

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Evaluation of the piezoresistive and electrical properties of polycrystalline silicon-germanium for MEMS sensor applications

2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS) ◽

10.1109/memsys.2010.5442437 ◽

2010 ◽

Author(s):

Pilar Gonzalez ◽

Luc Haspeslagh ◽

Kristin De Meyer ◽

Ann Witvrouw

Keyword(s):

Electrical Properties ◽

Silicon Germanium ◽

Polycrystalline Silicon ◽

Sensor Applications ◽

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Exploiting the steep subthreshold slope characteristics of tunnel transistors for wide tuning range voltage controlled ring oscillator (VCRO) design at scaled supply voltages down to 150mV

2016 3rd International Conference on Emerging Electronics (ICEE) ◽

10.1109/icemelec.2016.8074564 ◽

2016 ◽

Author(s):

Japa Aditya ◽

Shaik Sadulla ◽

Ramesh Vaddi

Keyword(s):

Tuning Range ◽

Ring Oscillator ◽

Subthreshold Slope ◽

Wide Tuning Range ◽

Supply Voltages ◽

Tunnel Transistors ◽

Steep Subthreshold Slope

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New Bidirectional T-Shaped Triple-Gate n-Type Polycrystalline Silicon Thin-Film Transistors Formed by Low-Temperature Sequential Lateral Solidification Process to Reduce of Kink Effects

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.034201 ◽

2011 ◽

Vol 50 ◽

pp. 034201

Author(s):

Sung-Hwan Choi ◽

Min-Koo Han

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Solidification Process ◽

Silicon Thin Film ◽

Sequential Lateral Solidification

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Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2810304 ◽

2018 ◽

Vol 65 (5) ◽

pp. 1862-1868 ◽

Author(s):

Seong Kwang Kim ◽

Jae-Phil Shim ◽

Dae-Myeong Geum ◽

Jaewon Kim ◽

Chang Zoo Kim ◽

...

Keyword(s):

Electrical Properties ◽

Ground Plane ◽

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Electrical properties and boundary structures in cast-grown polycrystalline silicon

2010 35th IEEE Photovoltaic Specialists Conference ◽

10.1109/pvsc.2010.5614412 ◽

2010 ◽

Author(s):

Takuto Kojima ◽

Yoshio Ohshita ◽

Tomihisa Tachibana ◽

Atsushi Ogura ◽

Masafumi Yamaguchi

Keyword(s):

Electrical Properties ◽

Polycrystalline Silicon

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Using Chemical Oxide Layer to Getter Nickel inside Nickel-Metal-Induced Lateral Crystallization Polycrystalline Silicon

ECS Meeting Abstracts ◽

10.1149/ma2008-02/35/2286 ◽

2008 ◽

Keyword(s):

Oxide Layer ◽

Polycrystalline Silicon ◽

Nickel Metal ◽

Lateral Crystallization

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