Layer exchange during aluminum-induced crystallization of silicon suboxide thin films

2021 ◽  
pp. 129723
Author(s):  
A.O. Zamchiy ◽  
E.A. Baranov ◽  
I.E. Merkulova ◽  
I.V. Korolkov ◽  
V.I. Vdovin ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Suboxide ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

Aluminum-induced crystallization of silicon suboxide thin films

2018 ◽  
Vol 124 (9) ◽  
Author(s):  
A. O. Zamchiy ◽  
E. A. Baranov ◽  
S. Ya. Khmel ◽  
V. A. Volodin ◽  
V. I. Vdovin ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Suboxide ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

CW Argon-ion laser initiated aluminum induced crystallization of amorphous silicon thin films

2004 ◽  
Vol 808 ◽  
Author(s):  
Sampath K. Paduru ◽  
Husam H. Abu-safe ◽  
Hameed A. Naseem ◽  
Adnan Al-Shariah ◽  
William D. Brown
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Power Density ◽  
Threshold Power ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Power Densities ◽  
Argon Ion ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

ABSTRACTCW Argon-ion laser initiated aluminum induced crystallization (AIC) of RF magnetron sputtered amorphous silicon (a-Si) thin films has been investigated. It was found that lasers could be effectively used to initiate AIC process at very low threshold power densities. An argon-ion laser (λ=514.5 nm) was used to anneal Al/a-Si/glass structures with varying power densities ranging between 55 and 125 W/cm2 and exposure times ranging from 10 to 120 s. X-ray diffraction analysis showed the resulting films to be polycrystalline. The crystallization rate increased both with power density and exposure time. Environmental scanning electron microscopy (ESEM) analysis showed that the surface features change with increasing power density and irradiation time. A dendritic growth pattern was observed in the initial stages of interaction between the films. A strong crystalline Raman peak at around 520 cm-1 was observed in the Raman spectra of the crystallized samples.

Aluminum induced crystallization of amorphous Ge thin films on insulating substrate

2016 ◽  
Author(s):  
Ch. Kishan Singh ◽  
T. Tah ◽  
D. T. Sunitha ◽  
S. R. Polaki ◽  
K. K. Madapu ◽  
...  
Keyword(s):  
Thin Films ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

2020 ◽  
Vol 46 (6) ◽  
pp. 583-586
Author(s):  
A. O. Zamchiy ◽  
E. A. Baranov ◽  
I. E. Merkulova ◽  
N. A. Lunev ◽  
V. A. Volodin ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Suboxide ◽  
Induced Crystallization

Effects of Power Density and Thickness On Aluminum-Induced Crystallization of PECVD Amorphous Silicon

2007 ◽  
Vol 989 ◽  
Author(s):  
Kendrick S Hsu ◽  
Jeremy Ou-Yang ◽  
Li P. Ren ◽  
Grant Z. Pan
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Power Density ◽  
Reaction Temperature ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Temperature Scanning ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

AbstractThe effect of power density and thickness on aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) formed with plasma enhanced chemical vapor deposition (PECVD) was studied by using N2-protected conventional furnace reaction and optical microscopy. With the deposition power density ranging from 0.05 to 1.00 W/cm2 and the thickness from 500 to 5000Å, it was found that a low power density as well as a large a-Si thickness could result in a decrease of activation energy and therefore a significant reduction of the AIC reaction temperature. Scanning and transmission electron microscopy and X-ray diffraction were used to check the crystallinity and quality of the AIC thin films. High quality polysilicon thin films were achieved at an AIC reaction temperature as low as 120°C.

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