Ring‐Like Defect Formation in N‐Type Czochralski‐Grown Silicon Wafers during Thermal Donor Formation

Results are presented of a comparative study of diodes processed on n-type Cz grown Si substrates without and with Ge doping concentration of about 1019 cm-3 and 1020 cm-3. In order to investigate thermal donor formation, isothermal annealing at 450°C for 0.5 – 5 h was carried out. As processed diodes were also irradiated with 2 MeV electrons with fluences in the range between 1014 and 1017 e/cm2 to investigate the Ge doping influence on irradiation induced defect formation. Diodes after thermal and radiation treatments have been investigated by combining different techniques.

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"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.108-109.181 ◽

2005 ◽

Vol 108-109 ◽

pp. 181-186 ◽

Cited By ~ 1

Author(s):

Valentin V. Emtsev ◽

Boris A. Andreev ◽

Gagik A. Oganesyan ◽

D.I. Kryzhkov ◽

Andrzej Misiuk ◽

...

Keyword(s):

Mechanical Stress ◽

Compressive Stress ◽

Reference Temperature ◽

Enhancement Effect ◽

Shallow Acceptor ◽

Thermal Donor ◽

Compressive Stresses ◽

Heat Treated ◽

Donor Formation ◽

New Donors

Effects of compressive stress on oxygen agglomeration processes in Czochralski grown silicon heat treated at T= 450OC, used as a reference temperature, and T= 600OC to 800OC are investigated in some detail. Compressive stresses of about P= 1 GPa lead to enhanced formation of Thermal Double Donors in materials annealed over a temperature range of T= 450OC – 600OC. It has been shown that the formation of thermal donors at T= 450OC under normal conditions and compressive stress is accompanied with loss of substitutional boron. In contrast, the concentration of the shallow acceptor states of substitutional boron in silicon annealed under stress at T≥ 600OC remains constant. An enhancement effect of thermal donor formation is gradually weakened at T≥ 700OC. The oxygen diffusivity sensitive to mechanical stress is believed to be responsible for the observed effects in heat-treated silicon.

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The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C

Materials Science Forum ◽

10.4028/www.scientific.net/msf.143-147.963 ◽

1993 ◽

Vol 143-147 ◽

pp. 963-968 ◽

Cited By ~ 9

Author(s):

S.A. McQuaid ◽

Charalamos A. Londos ◽

M.J. Binns ◽

R.C. Newman ◽

J.H. Tucker

Keyword(s):

Oxygen Loss ◽

Thermal Donor ◽

Donor Formation ◽

Kinetics Of

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Observation of five additional thermal donor species TD12 to TD16 and of regrowth of thermal donors at initial stages of the new oxygen donor formation in Czochralski-grown silicon

Physical Review B ◽

10.1103/physrevb.46.4312 ◽

1992 ◽

Vol 46 (7) ◽

pp. 4312-4315 ◽

Cited By ~ 87

Author(s):

W. Götz ◽

G. Pensl ◽

W. Zulehner

Keyword(s):

Thermal Donor ◽

Oxygen Donor ◽

Donor Formation ◽

Donor Species

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Optimizing Conditions for Formation of Local Zones for Thermomigration in Silicon

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.265.839 ◽

2017 ◽

Vol 265 ◽

pp. 839-844

Author(s):

B.M. Seredin ◽

V.P. Popov ◽

A.N. Zaichenko

Keyword(s):

Flow Rate ◽

Protective Coating ◽

Silicon Oxide ◽

Defect Formation ◽

Relative Number ◽

Silicon Wafers ◽

Process Temperature ◽

Optimum Conditions ◽

Surface Microrelief

The types of defects occurring during the formation of local zones on the surface of silicon wafers have been established. The dependences of defect formation on the surface from the surface microrelief, thickness of the protective coating of silicon oxide, process temperature, flow rate of the melt, the height of the melt, and the concentration of gallium additives in the aluminum have been determined. The optimum conditions of the process of zones formation have been revealed, and the total relative number of all types of defects has been significantly reduced.

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