LOW-TEMPERATURE ION-PLASMA DEPOSITION TECHNOLOGY OF NANOSTRUCTURED FILMS OF ALUMINUM AND BORON NITRIDES

A low-temperature (substrate heating temperature up to 400 °C) ion-plasma technology for the formation of nanostructured AlN and BN films by the method of high-frequency reactive magnetron sputtering of the corresponding targets has been developed (the modernized installation "Cathode-1M"), which has in its technological cycle the means of physical and chemical modification, which allow to purposefully control the phase composition, surface morphology, size and texture of nanocrystalline films. The possibility of using the method of high-frequency magnetron sputtering for deposition of transparent hexagonal BN films in the nanoscale state on quartz and silicon substrates is shown. Atomic force microscopy (AFM) has shown that AlN films can have an amorphous or polycrystalline surface with grain sizes of approximately 20-100 nm, with the height of the nanoparticles varying from 3 to 10 nm and the degree of surface roughness from 1 to 10 nm. It was found that the dielectric penetration of polycrystalline AlN films decreases from 10 to 3.5 at increased frequencies from 25 Hz to 1 MHz, and the peak tangent of the dielectric loss angle reaches 0.2 at 10 kHz. Such features indicate the existence of spontaneous polarization of dipoles in the obtained AlN films. Interest in dielectric properties in AlN / Si structures it is also due to the fact that there are point defects, such as nitrogen vacancies and silicon atoms, which diffuse from the silicon substrate during synthesis and play an important role in the dielectric properties of AlN during the formation of dipoles. The technology makes it possible, in a single technological cycle, to produce multilayer structures modified for specific functional tasks with specified characteristics necessary for the manufacture of modern electronics, optoelectronics and sensorics devices. It should also be noted that the technology of magnetron sputtering (installation "Cathode-1M") is highly productive, energetically efficient and environmentally friendly in comparison with other known technologies for creating semiconductor structures and allows them to be obtained with minimal changes in the technological cycle.

Trends in the development of sensor devices based on surface plasmon resonance (Review)

Trends in the development of modern sensory devices based on surface plasmon resonance (SPR) are considered. The basic principles of construction of SPR sensor are given. For excitation of surface plasmons on the surface of sensitive elements of biosensory, a prism of total internal reflection is used or a dielectric substrate are used. A thin (dozens nm) film of high-conductive metal (mainly gold or silver) is applied to the working surface of the prisms or dielectric substrate. In a typical observation experiment, SPR is measured dependence on the angle of increasing light intensity, reflected by the resonance sensitive surface of the prism (chip). The optical schemes and principles of work of various SPR sensors are considered: - SPR Sensors with angular modulation, which are the most commonly used method based on the corner registration, in which the SPR occurs. The surface of the metal film is irradiated by monochromatic light and scans on a certain range of angles. There is a kind of SPR sensors with angular modulation, in which there is no mechanical scan of the angle of fall. Such sensors are entirely necessary for excitation of PPRs a set of angles is obtained due to a divergent or convergent light beam. - PPR sensors with a wavelength modulation is based on fixing an angle of falling light at a certain value and modulation of the wavelength of the incident light. Excitation of surface plasmons leads to a characteristic failure in the spectrum of reflected radiation. - Phase sensitive SPR sensors in which a change in the phase of the light wave associated with the surface plasma is measured on one corner of the fall and the wavelength of the light wave and is used as the output signal. - SPR imaging sensors in which the Technology of SPR imaging (SPRi) combines the sensitivity of the SPR with spatial image capabilities. The SPRI circuit uses as a fixed angle (as a rule, a slightly left angle of the SPR) and a fixed wavelength to measure changes in the reflection ability (Δ% R) that occur when the curve of the SPR is shifted due to the change in the refractive index above the surface of the sensor element. - SPR imaging sensors polarization contrast. In order to improve the quality of high-performance SPR imaging sensors in terms of sensitivity and resolution, the method of polarization contrast is used Disadvantages and advantages of SPR sensors are constructed with different principles are considered. The design and prospect of the use of achromatic and suburchast wave plates in the PPR imaging sensors with polarization contrast are considered.

DIAGNOSIS OF SEMICONDUCTOR HETEROSYSTEMS USING THE PHOTOVOLTAIC METHOD

The diagnostic method is as follows: the lateral photo-EMF spectral characteristics are measured, generated in the structure (or device) when illuminated by wavelength light with a near the edge of the basic semiconductor layer. For illustrations of efficiency method the given part of the measurement results for Schottky contact samples with a nitrogen concentration of 5% and a thermal annealing temperature of 900 and 950°C. It has been found that a significant character and a small amplitude of such a characteristic indicates qualitative at a homogeneity and the necessary magnitude of the potential barrier (or barriers), that it is necessary to form to make Schottky contact or other structure. A significant characteristic and a small amplitude of such a characteristic indicates a qualitative one-line and the required value of a potential barrier (or barriers) that must be formed for the manufacture of a semiconductor structure or device. If the spectral characteristic has one maximum and amplitude that is many times higher than the amplitude of a significant characteristic, then this indicates a formed transition layer between components of heterosystems with high, compared with a quasine-power region of semiconductor, conductivity. The presence of such a layer increases the probability breaks down of the microelectronic device. Investigation of the distribution of lateral photours along the metal semiconductor interface compliant interpretation of spectral characteristics features. The linear significant form of distribution of EMF confirms the presence of a transition layer with a lower doping level compared with GaAs. An important feature of the diagnostic method is its non-destructive character, as well as the possibility of applying to semiconductor or devices based on them, in which the photovoltaic effect may occur.

SIGNIFICANCE OF DX-CENTERS FOR ACOUSTIC INDUCED RECONSTRUCTION PROCESSES OF DEFECTS IN GaN/AlGaN

The experimental results of amplitude effects are compared (from an ultrasonic wave deformation amplitude – a tension τUS) for electron concentration and changes of the lattice parameter on the same sample GaN/Al0.2Ga0.8N/GaN/AlN. It has been experimentally established that at ultrasonic loading (frequency 5–10 MHz, amplitude – towards 2·104 W/m2) there is a nonlinear increase in the effective electron concentration and an increase in the lattice parameter; at the same time, the mobility of electrons decreases and μН(τUS) ~ |τUS|. The energy parameters of the acoustic activation charge carriers process are calculated from the approximation of experimental amplitude changes – Еа ≈ 50 meV and γn(300 K) ≈ 2,5·10-27 m3. The amplitude dependences (increase) of the relative lattice parameter change (ΔС/С) from the tension τUS have been investigated experimentally at different frequencies. The energy of DX-center transition UDX ≈ 108 meV and the activation volume of this transition γDX ≈ 6,6·10-27 m3 are calculated from the approximation of the experimental amplitude changes. The revealed correlation of the magnitude of acoustic induced effects in different experiments allows to build a quantitative energy model of the acoustic action process based on the properties of metastable DX centers. It is shown that the acoustic induced process occurs due to the dimensional displacement of the DX-center atom (a background impurity of silicon atoms) from the non-central position to the centrally symmetric one; herewith DX-center is ionized, one goes into the d0-state. It is believed that the changes are most likely to occur near penetrating dislocations in the barrier layer Al0.2Ga0.8N – acoustic modulated oscillations of the distance between the possible positions of the donor atom lead to a decrease in the barrier to the displacement of the defect.

SOLAR BATTERIES AS AN ELEMENT OF DESIGN OF MODERN ENERGY EFFICIENT BUILDINGS

The concept of increasing the energy efficiency of buildings by placing solar panels on their facades is considered. This solution is evaluated from the point of view of modern urban design, and the possibilities of increasing the energy efficiency of lighting systems of modern buildings with the use of solar panels for their power supply are determined. The implementation of a combination of power from renewable energy sources and from the stationary grid in the absence of energy storage systems (batteries) allows to create systems capable of using almost all the electricity generated by an alternative energy source. In this case, energy losses to energy transportation will be minimal. The absence of such battery systems in the designs allows to install only the design-calculated number of solar panels without the need to make a significant backup of generating capacity for its accumulation or operation in adverse weather conditions. An additional advantage of abandoning energy storage - batteries, is a significant reduction in the use of environmentally hazardous substances such as lead, lithium and acidic or alkaline electrolytes, the production of which has a negative impact on the environment, and their disposal requires additional costs. In the work, it is proposed to use cassette facade systems with built-in solar panels, which allow architects to create a modern appearance of buildings and structures. It is shown that in the absence of solar tracking systems, the reduction in generation is 23% for the case of horizontal expansion of solar panels compared to the case of the optimal angle (for Kyiv 40o) and 40% for the case of vertical installation of solar panels. The analysis indicates the possibility of creating a modern energy-efficient design of building facades, both in the design of modern buildings and in the restoration of facades of existing buildings.

Optical control of the interface between gold surface and blood cell samples

The optical properties of blood (spectra of the extinction coefficient, k, refractive index, n, etc.) carry important diagnostic information and are usually monitored using bulk samples. In this work, attention is drawn to the interface between the blood volume and the surface of glass or thin gold films on it, where the refractive index may differ from the bulk one. We draw attention to the relationship between two effects – SPR and TIR. It is shown that if the named effects are measured for two different external media 0 and 1 with different refractive indices, then the values of the angles SPR and TIR will be linearly related by the empirical formula SPR1=SPR0+TIR1- TIR0)*K, where the coefficient K depends on the thickness of the transition layer di between the surface and the volume of the liquid medium (suspension). Numerical calculation of K (di) for gold films shows that K = 1.6 at di = 0 and monotonically decreases to 0.01 with an increase in di to 300 nm (and further to 0). Measurement of the angular dependences of reflection, R(), on (1) 100% hematocrit blood samples, (2) hemolyzed samples and (3) washed erythrocytes with dilutions with a buffer solution. It was shown that all samples exhibit a minimum SPR, but the TIR angle can be measured only for blood samples with destroyed membranes (hemolyzed), buffer solution and plasma. The n-value for hemolyzed blood is 1.3505, which is indicative of a low hemoglobin content in the sample. At the same time, di for a sample of 100% hematocrit was 60-105 nm, which indicates a strong deformation of erythrocytes in the form of polyhedrocytes and their dense packing after centrifugation. Washing the cells with a buffer increases di to 280 nm and more and practically eliminates blood cells from the SPR sensitivity region. The reason for this may be that in the blood of 100% hematocrit, erythrocytes are in the form of polyhedrocytes tightly adhering to the gold surface, while as a result of washing and diluting with a buffer solution, the cells relax back into discocytes. As a result, the containing hemoglobin erythrocyte cytoplasm moves away from the surface at a distance di> 300 nm into the suspension volume and leaves the area of the enhanced plasmon-polariton field.

PHOTOLUMINESCENCE OF NANOCRYSTALLINE CdTe, INTRODUCED INTO POROUS SILICON

A method of colloidal synthesis of monodisperse nanocrystals (NC) with high stability, narrow bands of photoluminescence (PL) and high quantum yield has been developed. The process of colloidal synthesis took place at room temperature and for the passivation of NC used a variety of surfactants. The surface of NC CdTe was modified by introducing them into a matrix, organic or crystalline. In our case, the matrix was porous Silicon (PS), that is a composite structure was formed on the basis of the matrix and NC semiconductor. Nanocomposite structures of PS – NC CdTe were obtained by introducing colloidal solutions of NC CdTe into the solid matrix of PS and subsequent processing at a certain temperature regime. The photoluminescent properties of a composite system in which the matrix is microcrystalline PS and the second component is NC CdTe deposited from a colloidal solution of NC CdTe have been studied. The peculiarity of this system is that both components have PL of different intensities.The large difference in PL intensities and different positions of the radiation bands allowed, comparing the PL spectra of the colloidal solution of NC CdTe, PS and NC CdTe – PS at different stages of introduction of CdTe nanoparticles into the porous Silicon surface, to identify the interaction and mutual influence of the two constituent materials. The main disadvantages of the method are its relative novelty, which leads to the need for empirical selection of some parameters of the synthesis. The planned change of properties of PS and colloidal solutions of NC CdTe by variation of technological methods of synthesis and processing methods will allow to control the physical properties of this composite system and use it to develop new principles of design and creation of new generation sensor devices.

INVESTIGATION OF THE SURFACE PLASMON-POLARITONS EXCITATION EFFICIENCY ON ALUMINUM GRATINGS, TAKING INTO ACCOUNT DIFFRACTED RADIATION

Detailed studies of the efficiency of excitation of surface plasmon-polaritons (SPP) on aluminum gratings with a period a = 694 nm, which exceeds the incident wavelength of λ = 632,8 nm, have been carried out. The gratings relief depth (h) range was 6–135 nm. Research samples were formed on As40S30Se30 chalcogenide photoresist films using interference lithography and vacuum thermal deposition of an opaque aluminum layer about 80 nm thick. An atomic force microscope was used to determine the groove profile shape and the grating relief depth. The study of the SPP excitation features was carried out on a stand mounted on the basis of a G5M goniometer and an FS-5 Fedorov stage by measuring the angular dependences of the intensity of specularly reflected and diffracted p-polarized radiation of He-Ne laser. When determining the SPP excitation efficiency, the resonance values of both specular reflection and reflection in the -1st DO were taken into account. It was found that the dependence of the integral plasmon absorption on the grating modulation depth (h/a) is described by a somewhat asymmetric curve with a wide maximum, the position of which corresponds to an h/a value of about 0.07 and a half-width of about 0.123. This allows to excite SPP with an efficiency ≥ 80% of the maximum value on the gratings with the 0,05-0,105 h/a range. The half-width of the plasmon minimum of the reflection in the -1st DO is less than in the specular reflection, which can increase sensitivity of sensor devices when registering the shift of the minimum from angular measurements. The dependence of the half-width of the SPP reflection minima on the grating modulation depth is close to quadratic. In the investigated h/a range (from 0.009 to 0.194), the maximum dynamic range of the reflection coefficient is two orders of magnitude and is achieved in specular reflection for gratings with h/a ≈ 0.075.

INVESTIGATION OF THERMAL RADIATION ANGULAR AND POLARIZATION CHARACTERISTICS OF ONE-DIMENSIONAL PHOTONIC STRUCTURES ON A FINITE SUBSTRATE

One-dimensional photonic structures (PS) are the layered metamaterials, which optical properties are due to interference effects within the structure. Due to the interaction of electromagnetic waves with the periodic structure, the thermal radiation (TR) of such PS has the features of coherent: it has a selective spectrum and a petal pattern. The relevance of TR PS research is due to the search for new materials to create sources of infrared (IR) radiation in the middle and far IR range (with a wavelength > 5 μm). The second important area of application of the radiating properties of the PS is the creation of non-radiating coatings to remove unwanted TR from the heated surfaces of the IR devices. Despite the fact that the irradiative properties of PS have been studied quite well, in the literature insufficient attention is paid to the influence of the finite substrate on the parameters of TR structures. The influence of a finite incoherent substrate on the angular and polarization characteristics of the thermal radiation of the system (photonic structure)/substrate has been investigated. Systems consisting of plane-parallel Ge or Si plates as PS and incoherent BaF2, BaF2/Al and Al substrates were used in experimental studies. It has been established, the contrast and amplitude of the directional diagram petals of the TR system depend on the ratio of the optical characteristics of the photonic structure and the substrate. The presence of a strongly reflective substrate eliminates the difference between the angular dependences of the s- and p-polarized components of the TR. In the case when the PS is placed on a transparent incoherent substrate with a lower refractive index, there is an increase in the p-polarized component of the TR and the suppression of the s-polarized. The thermal imaging picture of the TR angular distribution of the Si/Al system has been recorded and it was experimentally proved that the TR of photonic systems exhibits circular patterns. The results of the work can be used in the development of narrowband emitters in the middle and far infrared range, coatings to increase radiation energy exchange and coatings with minimal emissivity that are invisible in the thermal range.

FEATURES OF SELECTING DIELECTRIC LAYERS FOR ELECTROLUMINESCENT STRUCTURES

The paper considers an equivalent scheme of a thin-film electroluminescent emitter (TFELE), taking into account dielectric leaks, and proposes a criterion for the optimal choice of a dielectric in the structure to increase its efficiency. A calculation method is proposed for the optimal choice of material for dielectric films in an electroluminescent structure, taking into account their dielectric loss tangent. The algorithm for optimizing the parameters is based on the method of pairwise comparison of two dielectrics, provided that the charge flowing through the structure is constant or increased. The calculated data for materials are given in the form of a table according to the sequence of deterioration of their characteristics. The most attractive of the materials considered are PbTiO3, Ta2O5, Y2O3, as well as improved ceramics, which is confirmed by experiment. The possibility of applying the proposed model to explain the dependence of the luminosity of electroluminescent emitters on their excitation voltage is shown. A comparative analysis of the results of the calculation and experiment of the dependence of brightness on the applied voltage (B-V) for three types of TFELE based on a luminescent layer ZnS : Mn (0.5%) with a thickness of 0.6 μm, placed between two dielectric layers with a thickness of about 0.3- 0.35 μm with Ta2O5, Sm2O3 and Y2O3, respectively. It is established that the threshold luminescence excitation voltage correlates with the value of εE, and the maximum brightness with the value of εE / tg (δ). The table also shows the calculated characteristics of NdAlO3 and AlN films deposited by high-frequency magnetron sputtering. Higher brightness values can be expected from electroluminescent structures with such a dielectric than from structures with dielectric films with Sm2O3 and Y2O3. The results of such studies are presented in the form of a graph and table. This method can find practical application in the development of new materials and technologies for their production.