Crystallization of rubrene on a nanopillar-templated surface by the melt-recrystallization process and its application in field-effect transistors

Oriented rubrene nanocrystal growth from melt on a nanopillar-templated surface, adaptable for field-effect transistor application.

Molecular Dynamics Simulations of the Effect of Carbon Concentration on Silicon Carbide Crystal Growth

The effect of carbon concentration on SiC crystal growth from melt at 2900 K has been investigated by molecular dynamics simulations. The inter-atomic forces are calculated by MEAM potential. Atomic layer density showed that, with the carbon concentration increasing in the range of 1%-70%, the SiC crystal growth rate increased first as the c concentration less than 45%, and then decreased as the c concentration more than 50%. The number of defected atoms showed that the SiC crystal growth rate had exponent relation to the C concentration both during increasing and decreasing process.