Диссипативное туннелирование электронов в вертикально связанных двойных асимметричных квантовых точках InAs/GaAs(001)

We report on the results of experimental studies of the photoelectric properties of a GaAs p-i-n photodiode with InAs/GaAs(001) double asymmetric quantum dots (DAQDs) grown by self-assembling in Metal Organic Vapor Phase Epitaxy (MOVPE) process. Three peaks were observed in the dependence of the photocurrent on the reverse bias measured at monochromatic photoexcitation of the DAQDs at the wavelength corresponding to the energy of interband optical transitions between the ground hole and electron states in the bigger QDs. These peaks were related to the tunneling of the photoexcited electrons between the QDs including the dissipative one (with emission and absorption of the optical phonons). The experimental results agree qualitatively with the theoretical field dependence of the 1D dissipative tunneling probability between the QDs.

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Эффект увеличения фотопроводимости в гетероструктуре II типа n-GaSb/InAs/p-GaSb с одиночной квантовой ямой

Физика и техника полупроводников ◽

10.21883/ftp.2018.08.46217.8842 ◽

2018 ◽

Vol 52 (8) ◽

pp. 906

Author(s):

М.П. Михайлова ◽

И.А. Андреев ◽

Г.Г. Коновалов ◽

Л.В. Данилов ◽

Э.В. Иванов ◽

...

Keyword(s):

Sharp Increase ◽

Reverse Bias ◽

Monochromatic Light ◽

Optical Gain ◽

Main Role ◽

Type Ii ◽

Single Quantum ◽

Single Quantum Well ◽

Organic Vapor ◽

Metal Organic

AbstractSignificant photocurrent/photoconductivity amplification is observed at low reverse biases in a type-II n -GaSb/InAs/ p -GaSb heterostructure with a single quantum well (QW), grown by metal-organic vapor phase epitaxy. A sharp increase in the photocurrent by more than two orders of magnitude occurs under exposure of the heterostructure to monochromatic light with a wavelength of 1.2–1.6 μm (at 77 K) and the application of a reverse bias in the range 5–200 mV. The optical gain depends on the applied voltage and increases to 2.5 × 10^2 at a reverse bias of 800 mV. Theoretical analysis demonstrated that the main role in the phenomenon is played by the screening of the external electric field by electrons accumulated in the deep InAs QW and by the mechanism of the tunneling transport of carriers with a small effective mass. It is shown that the effect under study is common to both isotype and anisotype type-II heterojunctions, including structures with QWs and superlattices.

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Формирование гетероструктур GaP/Si-фотопреобразователей с помощью комбинации методов МОС-гидридной эпитаксии и атомно-слоевого плазмохимического осаждения

Письма в журнал технической физики ◽

10.21883/pjtf.2021.14.51189.18781 ◽

2021 ◽

Vol 47 (14) ◽

pp. 51

Author(s):

А.В. Уваров ◽

А.И. Баранов ◽

Е.А. Вячеславова ◽

Н.А. Калюжный ◽

Д.А. Кудряшов ◽

...

Keyword(s):

Solar Cells ◽

Atomic Layer Deposition ◽

Vapor Phase ◽

Atomic Layer ◽

Organic Vapor ◽

Photoelectric Properties ◽

Si Solar Cells ◽

Layer Deposition ◽

Additional Processing ◽

Metal Organic

The possibility of creating a lower junction of multijunction A3B5/Si solar cells based on an n-GaP/p-Si heterostructure was shown, using a combination of plasma enhanced atomic-layer deposition (PEALD) and metal-organic vapor phase epitaxy (MOVPE) at a temperature (Ts) not exceeding 650 °C. Photoelectric properties of structures grown at 650 °C, depends on the conditions of the PEALD process, in particular, the use of additional processing in Ar plasma.

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Thermal Diffusion of Si Atoms in Delta-Doped n-Type InAlAs Grown by Metal-Organic Vapor-Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.534 ◽

2004 ◽

Vol 43 (2) ◽

pp. 534-535 ◽

Cited By ~ 2

Author(s):

Hiroki Sugiyama ◽

Haruki Yokoyama ◽

Takashi Kobayashi

Keyword(s):

Thermal Diffusion ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organic Vapor ◽

Metal Organic

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Oxygen-related defects in low phosphorous content GaAs1−yPy grown by metal organic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.366032 ◽

1997 ◽

Vol 82 (5) ◽

pp. 2263-2269 ◽

Cited By ~ 6

Author(s):

J. G. Cederberg ◽

K. L. Bray ◽

T. F. Kuech

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organic Vapor ◽

Metal Organic ◽

Phosphorous Content

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Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates

Journal of Electronic Materials ◽

10.1007/s11664-003-0048-8 ◽

2003 ◽

Vol 32 (7) ◽

pp. 656-660 ◽

Cited By ~ 28

Author(s):

C. D. Maxey ◽

J. P. Camplin ◽

I. T. Guilfoy ◽

J. Gardner ◽

R. A. Lockett ◽

...

Keyword(s):

Epitaxial Growth ◽

Vapor Phase ◽

Organic Vapor ◽

Metal Organic

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Ingan Quantum Dots Fabricated On Aigan Surfaces -Growth Mechanism And Optical Propertiesh-

MRS Proceedings ◽

10.1557/proc-482-737 ◽

1997 ◽

Vol 482 ◽

Author(s):

H. Hirayama ◽

S. Tanaka ◽

P. Ramvall ◽

Y. Aoyagi

Keyword(s):

Quantum Dots ◽

Three Dimensional ◽

Chemical Vapor ◽

Energy Shift ◽

Organic Chemical ◽

Self Assembling ◽

Atomic Force ◽

Peak Energy ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

AbstractWe demonstrate photoluminescence from self- assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal- organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step- flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ˜10nm and ˜5nm, respectively, by an atomic- force- microscope (AFM). Indium mole fraction of InxGal−x N QDs is controlled from x=˜0.22 to ˜0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature- dependent energy shift of the photoluminescence peak- energy shows a localization behavior.

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