Asymmetric jet production in the active galactic nucleus of NGC 1052

Context. Few active galactic nuclei (AGN) reveal double-sided jet systems. However, these systems are crucial to understand basic physical properties of extragalactic jets. Aims. We address the questions whether jets in AGN are symmetric in nature, how well they are collimated on small scales, and how they evolve with time. Methods. We monitored the sub-parsec scale morphology of NGC 1052 with the Very Long Baseline Array at 43 GHz from 2005 to 2009. Results. A detailed study of 29 epochs show a remarkable asymmetry between both jets. A kinematic analysis of the outflows reveals higher apparent velocities for the eastern (approaching) jet as compared to the western (receding) jet, i.e., βej = 0.529 ± 0.038 and βwj = 0.343 ± 0.037, respectively. Contradictory to previous studies, we find higher flux densities for the western jet as compared to the eastern. The distribution of brightness temperature and jet width features well-collimated jets up to 1 mas distance to the dynamic center and a nearly conical outflow further outward. By combining flux density ratios and velocities of the jet flows, we were unable to find a combination of intrinsic velocities and inclination angles of the jets that is consistent for all four years of observation; this contradicts findings for symmetrically evolving jets. Spectral index maps between quasi-simultaneous 22 GHz and 43 GHz observations support the existence of an optically thick absorber covering the innermost ≃1.6 mas around the 43 GHz central feature and an optically thin jet emission with a spectral index of ≤−1. Conclusions. Our results fit into a picture in which we expect larger internal energy and/or magnetic flux in the western jet and higher kinetic energy in the eastern jet. Previous observations at lower frequencies have found slower velocities of the moving jet features as compared to this work. Considering the different velocities in different areas, we suggest a spine-sheath structure with a faster inner layer and slower outer layer.

A decade’s worth of otolith PIXE analyses

Over the past 10 years, several thousand otoliths have been analyzed with PIXE (using 2.55 MeV protons) at LIBAF (Lund Ionbeam Analysis Facility, formerly LNMP Lund Nuclear Micro Probe). Over 40 elements have been identified in otoliths, many at levels suitable for PIXE analysis. Readily detectable elements in otoliths starting with Ca are: Ca (the matrix), Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, As, Se, Br, Sr, Y, Zr, Mo, Cd, Sn (difficult), I, Ba (sometimes difficult), Pb (difficult). The detector system, used over this time period, is more sensitive than many other X-ray detector systems, since it consists of eight HPGE detector elements (100 mm2 each), in an annular formation around the beam entrance. Using a thick absorber allows us to use quite high beam current, typically 12 nA, but sometimes up to 20 nA. This permits us to have low detection limits within short analysis times. Additionally, light stable isotope research is widespread in the sciences including ecology. Stable isotopes of N provide information about trophic level (“who eats who”), providing the opportunity to map out the switching of diets from one food type to another. Oxygen isotopes are useful as “environmental thermometers”. Currently, most of such analyses require destruction of the otolith, and nitrogen isotope analysis may require dissolving entire otoliths, thus losing all temporal information. We present new techniques using new types of detectors, double side silicon strip detector (DSSSD). The detectors, electronics and the laboratory setup are described in detail; for our analysis, a MeV proton and a deuterium microbeam at LIBAF is used. The analysis is performed immediately after the PIXE analysis, without moving the sample.

Modeling and Optimization of Advanced Single- and Multijunction Solar Cells Based on Thin-Film a-Si:H/SiGe Heterostructure

In amorphous thin-film p-i-n solar cell, a thick absorber layer can absorb more light to generate carriers. On the other hand, a thin i-layer cannot absorb enough light. Thickness of the i-layer is a key parameter that can limit the performance of solar cell. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. Especially, current density of the cell can be enhanced without deteriorating its open circuit voltage, due to the modulation of material band-gap and the formation of a heterostructure. This work presents a novel numerical evaluation and optimization of an amorphous silicon double-junction structure thin-film solar cell (a-SiGe:H/a-Si:H) and focuses on optimization of a-SiGe:H mid-gap single-junction solar cell based on the optimization of the Ge content in the film, thickness of i-layer, p-layer and doping concentration of p-layer in a (p-layer a-Si:H/i-layer a-SiGe:H/n-layer a-Si:H) single-junction thin-film solar cell. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6.5% compared with the traditional a-Si:H solar cells.

Materials Issues In X-Ray Mask Repair by Focused Ion Beams

In x-ray mask repair high Z absorber features, such as gold or tungsten, must be removed or added. The main challenges are the small lateral dimensions (0.25 μm and below) and the thickness of the absorbers (˜ 0.5 μm) The focused ion beam appears to be the best tool developed to meet this challenge. Unwanted features are removed by ion milling while missing absorber is reconstructed using ion induced deposition from a locally piped-in precursor gas. The high aspect ratio of the features complicates both of these processes. Milling away 0.5 μm thick absorber can lead to redeposition of the sputtered material on neighboring features. The crystal grains of the absorber mill at different rates depending on orientation which results in nonuniform features. A possible alternative which only works with W absorber is to use ion assisted etching. In ion induced deposition a precursor gas such as dimethylgold hexafluoro acetylacetonate is provided by a capillary tube aimed at the region scanned by the ion beam. The incident Ga+ ions, usually at energies in the 25–100 keV range, dissociate the adsorbed precursor molecules leaving a deposit of gold mixed with carbon. The carbon content can approach 50 atomic % resulting in an x-ray attenuation which is about one half of that of pure gold. A number of unexplored materials science issues are associated with mask repair including: the reduction of the carbon content, redeposition both from milling and from induced deposition, milling as a function of crystal orientation and energy, and deposition of high aspect features. The technology is well enough developed so that mask repair of 0.25 μm features can be considered. However, a better understanding of the materials science aspects of x-ray mask repair will help to advance the state-of-the-art.