Research on Trimming Frequency-Increasing Technology for Quartz Crystal Resonator Using Laser Etching

A quartz crystal resonator (QCR) is an indispensable electronic component in the field of the modern electronics industry. By designing and depositing electrodes of different shapes and thicknesses on a quartz wafer with a certain fundamental frequency, the desired target frequency can be obtained. Affected by factors such as the deposition equipment, mask, wafer size and placement position, it is difficult to accurately obtain the target frequency at a given time, especially for mass-produced QCRs. In this work, a laser with a wavelength of 532 nm was used to thin the electrodes of a QCR with a fundamental frequency of 10 MHz. The electrode surface was etched through a preset processing pattern to form a processing method of local thinning of the electrode surface. At the same time, the effect of laser etching on silicon dioxide and resonator performance was analyzed. Satisfactory trimming frequency-increasing results were achieved, such as a frequency modulation accuracy of 1 ppm, frequency distribution with good consistency and equivalent parameters with small changes, by the laser partial etching of the resonator electrode. However, when the surface electrode was etched into using through-holes, the attenuation amplitude of the equivalent parameter became larger, especially in terms of the quality factor (Q), which decreased from 63 K to 1 K, and some resonators which had a serious frequency drift of >40%. In this case, a certain number of QCRs were no longer excited to vibrate, which was due to the disappearance of the piezoelectric effect caused by the local thermal phase change in the quartz wafer.

Research on a Micro-Processing Technology for Fabricating Complex Structures in Single-Crystal Quartz

Single-crystal quartz material is widely applied in the manufacture of resonators and sensors, but it is difficult to process because of its high hardness. A novel way to fabricate single-crystal quartz structures is proposed in this paper; the method includes quartz-on-silicon (QoS) technology and inductively coupled plasma (ICP) etching, which makes it feasible to fabricate complex structures with crystal quartz. The QoS method encompasses the bonding of silicon and quartz, followed by the thinning and polishing of quartz, which can enable the fabrication of an ultra-thin quartz wafer on silicon. In this way, instead of the conventional wet etching with hydrofluoric acid, the quartz layer can be easily etched using the ICP dry-etching method. Then, the structure of the pure quartz material is obtained by removing the silicon wafer. In addition, the silicon layer can be processed into the appropriate structure. This aspect overcomes the difficulty of processing a complex structure of single-crystal quartz with different crystal orientations. Thin single-crystal quartz wafers of Z-cut with a thickness of less than 40 μm were obtained by using this method, and a complex three-dimensional structure with an 80 μm width was also acquired by the ICP etching of the quartz wafer. The method can be applied to make both crystal-oriented quartz-based sensors and actuators, such as quartz resonant accelerometers.