Terahertz and Microwave Optical Properties of Single-Crystal Quartz and Vitreous Silica and the Behavior of the Boson Peak

Z-cut single-crystal quartz and vitreous silica (silica glass or fused silica) were evaluated for use as reference materials for terahertz and microwave measurements of complex permittivity, with Z-cut quartz confirmed as being suitable. Measurements of refractive indices and absorption coefficients for o-ray and e-ray in quartz and for vitreous silica are reported at frequencies between 0.2 and 6 THz and at 36 and 144 GHz, and compared with data reported in the literature. A previously unreported broad band was seen in the extraordinary absorption of quartz. The Boson peak in silica glass absorption was examined, and for the first time, two negative relationships have been observed: between the refractive index and the Boson peak frequency, and between the Boson peak height and its frequency.

Research on a Micro-Processing Technology for Fabricating Complex Structures in Single-Crystal Quartz

Single-crystal quartz material is widely applied in the manufacture of resonators and sensors, but it is difficult to process because of its high hardness. A novel way to fabricate single-crystal quartz structures is proposed in this paper; the method includes quartz-on-silicon (QoS) technology and inductively coupled plasma (ICP) etching, which makes it feasible to fabricate complex structures with crystal quartz. The QoS method encompasses the bonding of silicon and quartz, followed by the thinning and polishing of quartz, which can enable the fabrication of an ultra-thin quartz wafer on silicon. In this way, instead of the conventional wet etching with hydrofluoric acid, the quartz layer can be easily etched using the ICP dry-etching method. Then, the structure of the pure quartz material is obtained by removing the silicon wafer. In addition, the silicon layer can be processed into the appropriate structure. This aspect overcomes the difficulty of processing a complex structure of single-crystal quartz with different crystal orientations. Thin single-crystal quartz wafers of Z-cut with a thickness of less than 40 μm were obtained by using this method, and a complex three-dimensional structure with an 80 μm width was also acquired by the ICP etching of the quartz wafer. The method can be applied to make both crystal-oriented quartz-based sensors and actuators, such as quartz resonant accelerometers.

Resonant inelastic X-ray scattering spectrometer with 25 meV resolution at the CuK-edge

An unparalleled resolution is reported with an inelastic X-ray scattering instrument at the CuK-edge. Based on a segmented concave analyzer, featuring single-crystal quartz (SiO2) pixels, the spectrometer delivers a resolution near 25 meV (FWHM) at 8981 eV. Besides the quartz analyzer, the performance of the spectrometer relies on a four-bounce Si(553) high-resolution monochromator and focusing Kirkpatrick–Baez optics. The measured resolution agrees with the ray-tracing simulation of an ideal spectrometer. The performance of the spectrometer is demonstrated by reproducing the phonon dispersion curve of a beryllium single-crystal.