Comparison of the electrical and impedance properties of Au/(ZnOMn:PVP)/ n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation

2021 ◽  
Author(s):  
Şemsettin Altindal ◽  
Ali Barkhordari ◽  
Gholamreza Pirgholi-Givi ◽  
Murat Ulusoy ◽  
Hamid Reza Mashayekhi ◽  
...  
Keyword(s):  
Electric Field ◽  
Gamma Irradiation ◽  
Schottky Diodes ◽  
Linear Part ◽  
Thermionic Emission ◽  
Surface States ◽  
Electrical Parameters ◽  
Layer Width ◽  
Before And After ◽  
Voltage Dependent

Abstract The effect of 60Co-irradiation) on the electrical parameters in the Au/(ZnOMn:PVP)/n-Si SDs has been investigated using the current-voltage (I-V) and capacitance/conductance-voltage (C/G-V) measurements. Firstly, the values of reverse-saturation-current (Io), ideality-factor (n), barrier-height (BH), shunt/series resistances (Rsh, Rs), and rectifying-rate (RR) were extracted from the I-V data before and after gamma-irradiation (5 and 60 kGy) using thermionic-emission (TE), Norde, and Cheung methods. The surface-states (Nss) versus energy (Ec-Ess) profile was extracted from I-V data considering voltage-dependent of n and BH using the Card-Rhoderick method. Secondly, the doping-donor atoms (Nd), Fermi-energy (EF), BH, maximum electric-field (Em), and depletion-layer width (Wd) were extracted from the linear-part of reverse-bias C-2-V plot for 100 kHz before and after irradiation. Finally, the voltage-dependent profiles of Rs and radiation-induced of Nss were extracted from the C/G-V plots by using Nicollian-Brews and the difference between C-V plots before and after irradiation, respectively. The peak behavior in the Nss-V plots and shifts in its position was attributed to special-distribution of Nss at (ZnOMn:PVP)/n-Si interface and restructure/reordering of them under radiation and electric field. Experimental results show that gamma-irradiation is more effective both on the I-V and C/G-V plots or electrical parameters, and hence the fabricated Au/(ZnOMn:PVP)/n-Si SDs can be used as a radiation-sensor.

A comparative study on the electrical parameters of Au/n-Si Schottky diodes with and without interfacial (Ca1.9Pr0.1Co4Ox) layer

2016 ◽  
Vol 30 (16) ◽  
pp. 1650090 ◽  
Author(s):  
A. Kaya ◽  
H. G. Çetinkaya ◽  
Ş. Altındal ◽  
İ. Uslu
Keyword(s):  
Barrier Height ◽  
Room Temperature ◽  
Voltage Dependence ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Surface States ◽  
Electrical Parameters ◽  
Distribution Profile ◽  
Text Data ◽  
Energy Density Distribution

In order to compare the main electrical parameters such as ideality factor [Formula: see text], barrier height (BH) [Formula: see text], series [Formula: see text] and shunt [Formula: see text] resistances and energy density distribution profile of surface states [Formula: see text], the [Formula: see text]-[Formula: see text] (MS) Schotthy diodes (SDs), with and without interfacial [Formula: see text] layer were obtained from the current–voltage [Formula: see text]–[Formula: see text] measurements at room temperature. The other few electrical parameters such as Fermi energy level [Formula: see text], BH [Formula: see text]), [Formula: see text] and voltage dependence of [Formula: see text] profile were also obtained from the capacitance–voltage [Formula: see text]–[Formula: see text] measurements. The voltage dependence of [Formula: see text] profile has two distinctive peaks in the depletion region for two diodes and they were attributed to a particular distribution of [Formula: see text] located at metal–semiconductor (MS) interface. All of these results have been investigated at room temperature and results have been compared with each other. Experimental results confirmed that interfacial [Formula: see text] layer enhanced diode performance in terms of rectifier rate [Formula: see text] at [Formula: see text], [Formula: see text] [Formula: see text]at [Formula: see text] and [Formula: see text] [Formula: see text] with values of 265, [Formula: see text] and [Formula: see text] for MS type Schottky barrier diode and [Formula: see text], [Formula: see text] and [Formula: see text] for metal–insulator–semiconductor (MIS) type SBD, respectively. It is clear that the rectifying ratio of MIS type SBD is about 9660 times greater than MS type SBD. The value of barrier height (BH) obtained from [Formula: see text]–[Formula: see text] data is higher than the forward bias [Formula: see text]–[Formula: see text] data and it was attributed to the nature of measurements. These results confirmed that the interfacial [Formula: see text] layer has considerably improved the performance of SD.

scholarly journals Комплексное исследование кластеров радиационных дефектов в GaAs-структурах после нейтронного воздействия

2021 ◽  
Vol 47 (5) ◽  
pp. 38
Author(s):  
С.В. Оболенский ◽  
Е.В. Волкова ◽  
А.Б. Логинов ◽  
Б.А. Логинов ◽  
Е.А. Тарасова ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Schottky Diodes ◽  
Experimental Studies ◽  
Radiation Defects ◽  
Electrical Parameters ◽  
Force Microscopy ◽  
Atomic Force ◽  
Capacitance Voltage ◽  
Before And After ◽  
Concentration Of Electrons

The results of experimental studies of the electrical parameters and surface morphology of GaAs structures of ring and circular Schottky diodes before and after irradiation with ~ 1 MeV neutrons are presented. Bulk radiation defects were revealed by atomic force microscopy (AFM). Based on the results of capacitance-voltage measurements, the concentration of electrons was determined and their mobility was estimated before and after irradiation. On the basis of the results obtained using a combination of these methods, a technique is proposed for determining the average sizes of the space charge regions of clusters of radiation defects.

scholarly journals Frequency and Voltage-dependent Electrical Parameters, Interface Traps, and Series Resistance Profile of Au/(NiS:PVP)/n-Si Structures 

2021 ◽  
Author(s):  
Murat Ulusoy ◽  
Ş. Altındal ◽  
Perihan Durmuş ◽  
Süleyman Özçelik ◽  
Yashar Azizian Kalandaragh
Keyword(s):  
Series Resistance ◽  
Relaxation Times ◽  
Low Frequency ◽  
Surface States ◽  
Interface Layer ◽  
Voltage Profile ◽  
Electrical Parameters ◽  
Doping Density ◽  
Insulator Layer ◽  
Layer Width

Abstract A thin (NiS-doped PVP) interface layer was spin-coated on n-Si substrate and between Au contact were prepared on the surface by the sputtering method and then their basic electrical features for example diffusion-potential (VD), doping density of donor-atoms (ND), Fermi-energy (EF), barrier-height (ΦB), and depletion layer-width (WD) were extracted reverse-bias C-2-V plots as function frequency and voltage. The voltage profile of interface/surface-states (Nss)/ relaxation-times (τ), and series resistance (Rs) were also obtained from the admittance and Nicollian-Brews method, respectively. Strongly frequency-dependent and voltage especially in both accumulation and depletion regions due to the existence of Nss, Rs, and polarization as well as (NiS-doped PVP) organic interlayer. At low frequency, the observed higher value of C and G shows that thin (NiS:PVP) interlayer can be successfully used to obtain high charges/energy storage (MPS) structure/capacitor instead of conventional insulator layer performed traditional methods. As a result, the observed important changes in electrical parameters with frequency and voltage depend on Nss, their t, Rs, organic interlayer, and interfacial or dipole polarization.

Modulating the surface states of electric field assembled CuO nanowires by electrochemical deposition method

2009 ◽  
Vol 95 (8) ◽  
pp. 083107 ◽  
Author(s):  
Lixiang Wang ◽  
Gang Cheng ◽  
Xiaohong Jiang ◽  
Shujie Wang ◽  
Xingtang Zhang ◽  
...  
Keyword(s):  
Electric Field ◽  
Electrochemical Deposition ◽  
Surface States ◽  
Deposition Method ◽  
Cuo Nanowires ◽  
Electrochemical Deposition Method

scholarly journals Experimental study on variation law of electrical parameters and temperature rise effect of coal under DC electric field

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yunpeng Yang ◽  
Zhihui Wen ◽  
Leilei Si ◽  
Xiangyu Xu
Keyword(s):  
Electric Field ◽  
Temperature Rise ◽  
Experimental System ◽  
Gas Production ◽  
Breakdown Field ◽  
Coal Surface ◽  
Electrical Parameters ◽  
Slow Cooling ◽  
Microstructural Changes ◽  
Anthracite Coal

AbstractJoule heats which are generated by coals in an applied electric field are directly correlated with variation resistivity of electrical parameters of coals. Moreover, the joule heating effect is closely related with microstructural changes and relevant products of coal surface. In the present study, a self-developed applied direct current (DC) field was applied onto an experimental system of coals to investigate variation resistivity of electrical parameters of highly, moderately and lowly metamorphic coal samples. Moreover, breakdown voltages and breakdown field intensities of above three coal samples with different metamorphic grades were tested and calculated. Variation resistivity of electrical parameters of these three coal samples in 2 kV and 4 kV DC fields were analyzed. Results show that internal current of all coal samples increases continuously and tends to be stable gradually after reaching the “inflection point” at peak. The relationship between temperature rise effect on anthracite coal surface in an applied DC field and electrical parameters was discussed. The temperature rise process on anthracite coal surface is composed of three stages, namely, slowly warming, rapid warming and slow cooling to stabilize. The temperature rise effect on anthracite coal surface lags behind changes of currents which run through coal samples. There’s uneven temperature distribution on anthracite coal surface, which is attributed to the heterogeneity of coal samples. In the experiment, the highest temperature on anthracite coal surface 65.8 ℃ is far belower than the lowest temperature for pyrolysis-induced gas production of coals 200 ℃. This study lays foundations to study microstructural changes and relevant products on coal surface in an applied DC field.

Synthesis, Quantum Chemical Calculations, Molecular Docking and Studying the Effect of High Energetic Gamma Irradiation on Cu(I, II), Zn(II) and Cd(II) Complexes with their Antibacterial Activity.

2021 ◽  
Author(s):  
Hussein Elganzory
Keyword(s):  
Molecular Docking ◽  
Gamma Irradiation ◽  
Density Functional ◽  
Topoisomerase Ii ◽  
Gamma Ray ◽  
Inhibitory Effect ◽  
Molar Conductance ◽  
Basis Set ◽  
Conformational Structure ◽  
Before And After

Abstract New complexes of Cu(I,II), Zn(II) and Cd(II) of thiosemicarbazide ligand 1-(p-(methylanilinocetyl-4-phenyl-thiosemicarbazide)(H2LB) have been prepared and characterized by 1HNMR, Mass spectra, FT-IR, elemental analyses, molar conductance, UV-visible spectra, magnetic susceptibility measurements, thermogravimetric analysis (TGA/DTG) and X-ray diffraction pattern before and after irradiation. The results confirmed that gamma ray enhanced the stability of irradiated compounds as compared to non-irradiated compounds. XRD patterns proved that increasing the crystallinity of the samples and the particles in nano range after gamma irradiation. The obtained data indicated that the Cu(I) and Cd(II) ions coordinated to the ligand through the (C = O), N(2)H and (C = S), the ligand behaves as neutral tridentate. While in complexes Cu(II) and Zn(II)complexes (B2 and B3) the ligand behave as neutral tetradentate and coordination take place via (C = O) and two N(2)H. These studies revealed that, two kinds of stereochemical geometries; Cu(II) and Zn(II) complexes were predicted to be octahedral, Cu(I) and Cd(II)complexes were found to be tetrahedral. The theoretical conformational structure analyses were performed using density functional theory for ligand and complexes at B3LYP functional with 6-31G(++)d,p basis set for ligand and LANL2DZ basis set for complexes. The ligand and its metal complexes have been tested for their inhibitory effect on the growth of bacteria against gram-positive (Streptococcus pyogenes) and gram-negative (Escherichia coli). Results suggested that in case of 1µg/ml and 5µg/ml for Cu(II) and Zn(II) complexes have higher activity than other complexes. The chelation could facilitate the ability to cross the cell membrane of E. coli and can be explained by Tweedy’s chelation theory. Molecular docking investigation proved that; the Zn(II) complex had interesting interactions with active site amino acids of topoisomerase II DNA gyrase enzymes (code: 2XCT).

Chitosan-Bentonite Crosslinked Film As Indicator for Copper (II) Ions Adsorption

2021 ◽  
Author(s):  
Nurul Huda Osman ◽  
Nurul Najiha Mazu ◽  
Josephine Liew Ying Chyi ◽  
Muhammad Mahyiddin Ramli ◽  
Mohammad Abdull Halim Mohd Abdull Majid ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Impedance Spectroscopy ◽  
Adsorption Capacity ◽  
Contact Time ◽  
Dc Conductivity ◽  
Dielectric Constants ◽  
Peak Amplitude ◽  
Electrical Parameters ◽  
Before And After

This paper reports on chitosan/bentonite crosslinked (ChB-ECH) film for removal of Cu (II). The effects of chitosan/bentonite ratio on the removal percentage were studied along with the effect of different Cu (II) concentration and the contact time on the film adsorption capacity, qt. The electrical properties of the film are studied, before and after the adsorption occurred, by using impedance spectroscopy for different parameters such as DC conductivity, the complex dielectric constants (ε’ and ε”) and complex electrical modulas (M’ and M’’). The results showed that the chitosan/bentonite ratio of 3:1 produces highest removal percentage at 29 %, while the contact time of 120 minutes was found to be optimum. An increment in the DC conductivity of the ChB-ECH film’s was observed up to 10-7 S/cm as the removal percentage of film increased. The film with the highest Cu (II) adsorb also showed the highest value for ε’ and ε” while exhibiting non-Derby behavior. Shifting of peak amplitude of the M” towards the higher frequency was also observed as the Cu (II) adsorption in the film increased. The results showed that all the electrical parameters can be utilized to determine the amount of adsorbed copper (II) in chitosan/bentonite film.

Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 749-752 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Viktor V. Zelenin ◽  
Alexei N. Kuznetsov ◽  
Joseph Tringe ◽  
Albert V. Davydov ◽  
...  
Keyword(s):  
Series Resistance ◽  
Degradation Mechanism ◽  
Schottky Diodes ◽  
Defect Structures ◽  
Induced Current ◽  
Forward Current ◽  
Current Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

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