Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment

The degradation of InSe film and its impact on field effect transistors are investigated. After the exposure to atmospheric environment, 2D InSe flakes produce irreversible degradation that cannot be stopped by the passivation layer of h-BN, causing a rapid decrease for InSe FETs performance, which is attributed to the large number of traps formed by the oxidation of 2D InSe and adsorption to impurities. The residual photoresist in lithography can cause unwanted doping to the material and reduce the performance of the device. To avoid contamination, a high-performance InSe FET is achieved by a using hard shadow mask instead of the lithography process. The high-quality channel surface is manifested by the hysteresis of the transfer characteristic curve. The hysteresis of InSe FET is less than 0.1 V at Vd of 0.2, 0.5, and 1 V. And a high on/off ratio of 1.25 × 108 is achieved, as well relative high Ion of 1.98 × 10−4 A and low SS of 70.4 mV/dec at Vd = 1 V are obtained, demonstrating the potential for InSe high-performance logic device.

Indium selenide film: a promising saturable absorber in 3- to 4-μm band for mid-infrared pulsed laser

Indium selenide (InSe) film, an emerging two-dimensional chalcogenide semiconductor, has recently attracted growing interests in optoelectronics. However, its nonlinear characteristics and application potentials in mid-infrared (IR) region remain open, which is a very attractive but undeveloped spectral region currently. In this work, it is demonstrated that InSe film possesses excellent nonlinear absorption properties in 3- to 4-μm band. Saturable absorption measurements of InSe film at 2.8 and 3.5 μm show very low saturation energy fluences and moderate modulation depths. Pump–probe measurements at 3 and 4 μm indicate that InSe film has ultrafast responses in mid-IR region. Furthermore, the application of InSe film in mid-IR pulsed laser is demonstrated, and stable Q-switching operation of fiber laser at 2.8 μm is realized. These results show that InSe film is a promising saturable absorber for mid-IR pulsed laser.