scholarly journals Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3311
Author(s):  
Yadong Zhang ◽  
Xiaoting Sun ◽  
Kunpeng Jia ◽  
Huaxiang Yin ◽  
Kun Luo ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Characteristic Curve ◽  
Transfer Characteristic ◽  
Atmospheric Environment ◽  
Logic Device ◽  
Channel Surface ◽  
Inse Film ◽  
Effect Transistor

The degradation of InSe film and its impact on field effect transistors are investigated. After the exposure to atmospheric environment, 2D InSe flakes produce irreversible degradation that cannot be stopped by the passivation layer of h-BN, causing a rapid decrease for InSe FETs performance, which is attributed to the large number of traps formed by the oxidation of 2D InSe and adsorption to impurities. The residual photoresist in lithography can cause unwanted doping to the material and reduce the performance of the device. To avoid contamination, a high-performance InSe FET is achieved by a using hard shadow mask instead of the lithography process. The high-quality channel surface is manifested by the hysteresis of the transfer characteristic curve. The hysteresis of InSe FET is less than 0.1 V at Vd of 0.2, 0.5, and 1 V. And a high on/off ratio of 1.25 × 108 is achieved, as well relative high Ion of 1.98 × 10−4 A and low SS of 70.4 mV/dec at Vd = 1 V are obtained, demonstrating the potential for InSe high-performance logic device.

scholarly journals Analysis on Band Layer Design and J-V characteristics of Zinc Oxide Based Junction Field Effect Transistor

2020 ◽  
Vol 1 (2) ◽  
pp. 14-21
Author(s):  
Chaw Su Nandar Hlaing Chaw ◽  
Thiri Nwe
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Characteristic Curve ◽  
Vital Role ◽  
Semiconductor Material ◽  
Mathematical Equations ◽  
Effect Transistor

This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of materials for junction field effect transistor are described. Firstly, the energy bandgaps are performed based on the existing mathematical equations and the required parameters depending on the specified semiconductor material. Secondly, the J-V characteristic curves of semiconductor material are discussed in this paper. In order to achieve the current-voltage characteristic for specific junction field effect transistor, numerical values of each parameter which are included in analysis are defined and then these resultant values are predicted for the performance of junction field effect transistors. The computerized analyses have also mentioned in this paper.

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

Mixed-Dimensional WS2/GaSb Heterojunction for High-performance p-n Diode and Junction Field-Effect Transistor

2022 ◽  
Author(s):  
Zichao Cheng ◽  
Xiufeng Song ◽  
Lianfu Jiang ◽  
Lude Wang ◽  
Jiamin Sun ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Effect Transistor ◽  
P Type ◽  
Silicon Based

GaSb nanowires integrated on a silicon-based substrate are of great significance for p-type field-effect transistors. In particular, due to the continued miniaturization of circuits, such as avoiding complex dielectric engineering,...

Fabrication of high-performance photodetector based on AlGaN/GaN hetero-field-effect transistors with p-GaN gate

2006 ◽  
Vol 955 ◽  
Author(s):  
Shuichi Miura ◽  
Takahiro Fujii ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Uv Light ◽  
Signal To Noise Ratio ◽  
High Signal ◽  
Dark Current Density ◽  
Effect Transistor ◽  
P Type

ABSTRACTAn AlGaN/GaN photo-hetero-field-effect transistor (photo-HFET) with a p-type GaN gate was fabricated and its properties were compared with those of a HFET without a p-type GaN layer. The photo-HFET with a p-GaN gate exhibited a high signal-to-noise ratio of five orders of magnitude and a dark current density of 10 nA/mm at a drain-source bias of 5 V. In contrast, when the photo-HFET was irradiated with 365 nm (490 μW/cm2) UV light, a photocurrent of over 1 mA/mm was achieved. The responsivity of the device was over 1 × 105 A/W.

Review of Recent Advances in Carbon Nanotube Biosensors Based on Field-Effect Transistors

Nano LIFE ◽  
2016 ◽  
Vol 06 (03n04) ◽  
pp. 1642006 ◽  
Author(s):  
Guangfeng Hou ◽  
Lu Zhang ◽  
Vianessa Ng ◽  
Zhizhen Wu ◽  
Mark Schulz
Keyword(s):  
Mass Production ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
High Strength ◽  
Device Fabrication ◽  
Physiochemical Properties ◽  
Recent Advances ◽  
Effect Transistor

The extraordinary physiochemical properties of carbon nanotubes (CNTs) stimulated their wide application in biosensing research. Nanotube characteristics of fast electron transport, large surface area, high strength, excellent catalytic activity and good chemical stability contribute to ultrasensitive, highly selective and stable CNT biosensors. Among the various CNT biosensors, the field-effect transistor (FET) architecture has received tremendous attention due to the advantages of high performance, miniaturization, and capability for mass production. In this paper, we address recent advances in the development of CNT biosensors based on FETs. The synthesis and properties of CNTs are discussed, along with their integration into biosensors. Recent progress in device fabrication, including CNT functionalization, attachment, and bioreceptor immobilization in CNT-based FET biosensors are highlighted. Examples in medical, food and environmental fields are illustrated.

scholarly journals Stencil mask defined doctor blade printing of organic single crystal array for high-performance organic field-effect transistors

2021 ◽  
Author(s):  
Yue Xi ◽  
Tao Wang ◽  
Qi Mu ◽  
Congcong Huang ◽  
Shuming Duan ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic P ◽  
Organic Field Effect Transistors ◽  
Stencil Mask ◽  
Organic Single Crystal ◽  
Effect Transistor ◽  
Amorphous Si

Organic field-effect transistor (OFET) is one of the promising candidates for next generation electronics due to its solution processability and good performance superior to amorphous Si devices. Patterning the organic...

scholarly journals Tunable optoelectronic properties of a two-dimensional graphene/α-In2Se3/graphene-based ferroelectric semiconductor field-effect transistor

2021 ◽  
Author(s):  
Abdelkader Abderrahmane ◽  
Changlim Woo ◽  
Pil Ju Ko
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Ferroelectric Properties ◽  
Transfer Characteristic ◽  
Optoelectronic Properties ◽  
Two Dimensional ◽  
Physical Mechanisms ◽  
Large Hysteresis ◽  
Effect Transistor

Abstract Two-dimensional (2D) materials are promising for future electronic and optoelectronic devices. In particular, 2D material-based photodetectors have been widely studied because of their excellent photodetection performance. Owing to its excellent electrical and optical characteristics, 2D indium selenide (α-In2Se3) is a good candidate for photodetection applications. In addition, α-In2Se3 samples, including atom-thick α-In2Se3 layers, present ferroelectric properties. Herein, we report the fabrication and electrical and optoelectronic properties of multilayered graphene (Gr)/α-In2Se3/Gr-based ferroelectric semiconductor field-effect transistors (FeS-FETs). Furthermore, we discuss the physical mechanisms affecting electronic and optoelectronic transport in the Gr/α-In2Se3/Gr heterostructure. Large hysteresis was observed in the transfer characteristic curves and it was attributed to the ferroelectric polarization of MTL α-In2Se3 and carrier trapping–detrapping effects. The optoelectronic performance of the fabricated FeS-FETs depended on the ferroelectric properties of α-In2Se3 and can be easily tuned to achieve the maximum photoresponsivity and specific detectivity of 10 AW-1 and 4.4 × 1012 cmHz1/2W-1, respectively.

scholarly journals Modeling of Dirac voltage for highly p-doped graphene field-effect transistor measured at atmospheric pressure

2020 ◽  
Vol 9 (5) ◽  
pp. 2117-2124
Author(s):  
Muhamad Amri Ismail ◽  
Khairil Mazwan Mohd Zaini ◽  
Mohd Ismahadi Syono
Keyword(s):  
Atmospheric Pressure ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Characteristic Curve ◽  
Transfer Characteristic ◽  
Parameter Extraction ◽  
Graphene Field Effect Transistor ◽  
Doped Graphene ◽  
Effect Transistor ◽  
Design Integration

In this paper, the modeling approach of Dirac voltage extraction of highly p-doped graphene field-effect transistor (GFET) measured at atmospheric pressure is presented. The difference of measurement results between atmospheric and vacuum pressures was analyzed. This work was started with actual wafer-scale fabrication of GFET with the purposes of getting functional device and good contact of metal/graphene interface. The output and transfer characteristic curves were measured accordingly to support on GFET functionality and suitability of presented wafer fabrication flow. The Dirac voltage was derived based on the measured output characteristic curve using ambipolar virtual source model parameter extraction methodology. The circuit-level simulation using frequency doubler circuit shows the importance of accurate Dirac voltage value to the device practicality towards design integration. 

2-Positional pyrene end-capped oligothiophenes for high performance organic field effect transistors

2016 ◽  
Vol 52 (26) ◽  
pp. 4800-4803 ◽  
Author(s):  
Kazuaki Oniwa ◽  
Hiromasa Kikuchi ◽  
Hidekazu Shimotani ◽  
Susumu Ikeda ◽  
Naoki Asao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Central Unit ◽  
Organic Field Effect Transistors ◽  
Crystal Field Effect ◽  
Effect Transistor

A new co-oligomer BPy2T with two 2-positional pyrenes as terminal groups and bithiophene as a central unit showed a high hole mobility of 3.3 cm2 V−1 s−1 in a single crystal field effect transistor.

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