scholarly journals Interface Induced Diffusion; Area Selective Interface Patterning

2021 ◽  
Author(s):  
S Gurbán ◽  
A Sulyok ◽  
M Menyhárd ◽  
E Baradács ◽  
B Parditka ◽  
...  
Keyword(s):  
Oxygen Diffusion ◽  
Room Temperature ◽  
Relative Rate ◽  
Electron Bombardment ◽  
Low Energy ◽  
Film System ◽  
Si Substrate ◽  
Temperature Dependent ◽  
Thin Film System ◽  
Altered Layer

Abstract Interface induced diffusion had been identified in thin film system damaged by electron bombardment. This new phenomenon was observed in Al2O3 (some nm thick) / Si substrate system, which was subjected to low energy (5 keV) electron bombardment producing defects in the Al2O3 layer. The defects produced partially relaxed. The rate of relaxation is, however, different in the surrounding of the interface and in the "bulk" parts of the Al2O3 layer. This difference generates an oxygen concentration gradient and consequently oxygen diffusion, resulting in an altered layer which grows from the Al2O3 / Si substrate interface. The relative rate of the diffusion and relaxation is strongly temperature dependent, resulting in various altered layer compositions, SiO2 (at room temperature), Al2O3 + AlOx+Si (at 500o C), Si(at 700o C), as the temperature during irradiation varies. Utilizing this finding it is possible to make area selective interface patterning.

scholarly journals Interface induced diffusion

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
S. Gurbán ◽  
A. Sulyok ◽  
Miklos Menyhárd ◽  
E. Baradács ◽  
B. Parditka ◽  
...  
Keyword(s):  
Oxygen Diffusion ◽  
Room Temperature ◽  
Relative Rate ◽  
Electron Bombardment ◽  
Low Energy ◽  
Film System ◽  
Si Substrate ◽  
Temperature Dependent ◽  
Thin Film System ◽  
Altered Layer

AbstractInterface induced diffusion had been identified in a thin film system damaged by electron bombardment. This new phenomenon was observed in Al2O3 (some nm thick)/Si substrate system, which was subjected to low energy (5 keV) electron bombardment producing defects in the Al2O3 layer. The defects produced partially relaxed. The rate of relaxation is, however, was different in the vicinity of the interface and in the "bulk" parts of the Al2O3 layer. This difference creates an oxygen concentration gradient and consequently oxygen diffusion, resulting in an altered layer which grows from the Al2O3/Si substrate interface. The relative rate of the diffusion and relaxation is strongly temperature dependent, resulting in various altered layer compositions, SiO2 (at room temperature), Al2O3 + AlOx + Si (at 500 °C), Al2O3 + Si (at 700 °C), as the temperature during irradiation varies. Utilizing this finding it is possible to produce area selective interface patterning.

scholarly journals Temperature dependent rate coefficients for the reactions of the hydroxyl radical with the atmospheric biogenics isoprene, <i>α</i>-pinene and Δ-3-carene

2017 ◽  
Author(s):  
Terry J. Dillon ◽  
Katrin Dulitz ◽  
Christoph M. B. Gross ◽  
John N. Crowley
Keyword(s):  
Cross Sections ◽  
Room Temperature ◽  
Relative Rate ◽  
Gas Pressure ◽  
Rate Coefficients ◽  
Absorption Cross ◽  
Temperature Dependent ◽  
Degradation Reactions ◽  
Dependent Rate ◽  
Accuracy And Precision

Abstract. Abstract. Pulsed laser methods for OH generation and detection were used to study atmospheric degradation reactions for three important biogenic gases: OH + isoprene (R1); OH + α-pinene (R2); and OH + Δ-3-carene (R3). Gas-phase rate coefficients were characterised by non-Arrhenius kinetics for all three reactions. For (R1), k1 (241–356 K) = (1.93 ± 0.08) × 10−11 exp (466 ± 12)/T cm3 molecule−1 s−1 was determined, with a room temperature value of k1 (297 K) = (9.3 ± 0.4) × 10−11 cm3 molecule−1 s−1, independent of bath-gas pressure (5–200 Torr) and composition (M = N2 or air). Accuracy and precision were enhanced by online optical monitoring of isoprene, with absolute concentrations obtained via an absorption cross-section, σisoprene = (1.28 ± 0.06) × 10−17 cm2 molecule−1 at λ = 184.95 nm, determined in this work. These results indicate that significant discrepancies between previous absolute and relative rate determinations of k1 result in part from σ values used to derive the isoprene concentration. Similar methods were used to determine rate coefficients (in 10−11 cm3 molecule−1 s−1) for (R2–R3): k2 (238–357 K) = (1.83 ± 0.04) × exp (330 ± 6)/T; and k3 (235–357 K) = (2.48 ± 0.14) × exp (357 ± 17)/T. This is the first temperature-dependent dataset for (R3) and enables the calculation of reliable atmospheric lifetimes with respect to OH removal for e.g. boreal forest springtime conditions. Room temperature values of k2 (296 K) = (5.4 ± 0.2) × 10−11 cm3 molecule−1 s−1 and k3 (297 K) = (8.1 ± 0.3) × 10−11 cm3 molecule−1 s−1 were independent of bath-gas pressure (7–200 Torr, N2 or air), and in good agreement with previously reported values. In the course of this work, 184.95 nm absorption cross-sections were determined: σ = (1.54 ± 0.08) × 10−17cm 2 molecule−1 for α-pinene and (2.40 ± 0.12) × 10−17  cm2 molecule−1 for Δ-3-carene.

Temperature dependent thickness change in NiO/Si thin film system

2013 ◽  
Author(s):  
Suvankar Chakraborty ◽  
Subarna Mitra ◽  
Krishnakumar S. R. Menon
Keyword(s):  
Thin Film ◽  
Film System ◽  
Temperature Dependent ◽  
Thickness Change ◽  
Thin Film System ◽  
Si Thin Film

Room-Temperature Electrical-Field Induced Oxygen Diffusion of Aluminum/Yttria-Stabilized Zirconia Thin Film Grown on Si Substrate

2006 ◽  
Vol 45 (11) ◽  
pp. 8827-8831 ◽  
Author(s):  
Naoki Wakiya ◽  
Naoya Tajiri ◽  
Takanori Kiguchi ◽  
Nobuyasu Mizutani ◽  
Jeffrey S. Cross ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Diffusion ◽  
Room Temperature ◽  
Yttria Stabilized Zirconia ◽  
Si Substrate ◽  
Stabilized Zirconia ◽  
Electrical Field ◽  
Zirconia Thin Film

Temperature-dependent residual stresses in a hetero-epitaxial thin film system

2015 ◽  
Vol 584 ◽  
pp. 186-191 ◽  
Author(s):  
M. Liu ◽  
H.H. Ruan ◽  
L.C. Zhang ◽  
A. Moridi
Keyword(s):  
Thin Film ◽  
Residual Stresses ◽  
Film System ◽  
Temperature Dependent ◽  
Epitaxial Thin Film ◽  
Thin Film System

scholarly journals Temperature-dependent rate coefficients for the reactions of the hydroxyl radical with the atmospheric biogenics isoprene, alpha-pinene and delta-3-carene

2017 ◽  
Vol 17 (24) ◽  
pp. 15137-15150 ◽  
Author(s):  
Terry J. Dillon ◽  
Katrin Dulitz ◽  
Christoph B. M. Groß ◽  
John N. Crowley
Keyword(s):  
Cross Sections ◽  
Room Temperature ◽  
Relative Rate ◽  
Gas Pressure ◽  
Rate Coefficients ◽  
Absorption Cross ◽  
Temperature Dependent ◽  
Alpha Pinene ◽  
Degradation Reactions ◽  
Accuracy And Precision

Abstract. Pulsed laser methods for OH generation and detection were used to study atmospheric degradation reactions for three important biogenic gases: OH + isoprene (Reaction R1), OH +α-pinene (Reaction R2) and OH + Δ-3-carene (Reaction R3). Gas-phase rate coefficients were characterized by non-Arrhenius kinetics for all three reactions. For (R1), k1 (241–356 K)  = (1.93±0.08) × 10−11exp{(466±12)∕T} cm3 molecule−1 s−1 was determined, with a room temperature value of k1 (297 K)  = (9.3±0.4) × 10−11 cm3 molecule−1 s−1, independent of bath-gas pressure (5–200 Torr) and composition (M  =  N2 or air). Accuracy and precision were enhanced by online optical monitoring of isoprene, with absolute concentrations obtained via an absorption cross section, σisoprene = (1.28±0.06) × 10−17 cm2 molecule−1 at λ = 184.95 nm, determined in this work. These results indicate that significant discrepancies between previous absolute and relative-rate determinations of k1 result in part from σ values used to derive the isoprene concentration in high-precision absolute determinations.Similar methods were used to determine rate coefficients (in 10−11 cm3 molecule−1 s−1) for (R2)–(R3): k2 (238–357 K)  = (1.83±0.04) × exp{(330±6)∕T} and k3 (235–357 K)  = (2.48±0.14) × exp{(357±17)∕T}. This is the first temperature-dependent dataset for (R3) and enables the calculation of reliable atmospheric lifetimes with respect to OH removal for e.g. boreal forest springtime conditions. Room temperature values of k2 (296 K)  = (5.4±0.2) × 10−11 cm3 molecule−1 s−1 and k3 (297 K)  = (8.1±0.3) × 10−11 cm3 molecule−1 s−1 were independent of bath-gas pressure (7–200 Torr, N2 or air) and in good agreement with previously reported values. In the course of this work, 184.95 nm absorption cross sections were determined: σ = (1.54±0.08) × 10−17 cm2 molecule−1 for α-pinene and (2.40±0.12) × 10−17 cm2 molecule−1 for Δ-3-carene.

Inserted metals for low-energy magnetoelectric switching in a Cr2O3/ferromagnet interfacial exchange-biased thin film system

2018 ◽  
Vol 6 (12) ◽  
pp. 2962-2969 ◽  
Author(s):  
Shujun Ye ◽  
Tomohiro Nozaki ◽  
Yoshinori Kotani ◽  
Kentaro Toyoki ◽  
Tetsuya Nakamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Ferromagnetic Film ◽  
Low Energy ◽  
Film System ◽  
Thin Film System ◽  
System P

Inserted metals work as a part of a stacked ferromagnetic film for low-energy magnetoelectric switching in a Cr2O3–antiferromagnet/ferromagnet interfacial exchange-biased system.

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

A crystallographic analysis of the CoSi/Si(111) interface using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 574-575
Author(s):  
A.C. Daykin ◽  
C.J. Kiely ◽  
R.C. Pond ◽  
J.L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Room Temperature ◽  
Theoretical Method ◽  
Crystallographic Analysis ◽  
Si Substrate ◽  
Transmission Electron ◽  
Theoretical Predictions

When CoSi2 is grown onto a Si(111) surface it can form in two distinct orientations. A-type CoSi2 has the same orientation as the Si substrate and B-type is rotated by 180° degrees about the [111] surface normal.One method of producing epitaxial CoSi2 is to deposit Co at room temperature and anneal to 650°C.If greater than 10Å of Co is deposited then both A and B-type CoSi2 form via a number of intermediate silicides .The literature suggests that the co-existence of A and B-type CoSi2 is in some way linked to these intermediate silicides analogous to the NiSi2/Si(111) system. The phase which forms prior to complete CoSi2 formation is CoSi. This paper is a crystallographic analysis of the CoSi2/Si(l11) bicrystal using a theoretical method developed by Pond. Transmission electron microscopy (TEM) has been used to verify the theoretical predictions and to characterise the defect structure at the interface.

Temperature Dependent Line-Shape of the Silicon Dangling Bond EPR-Resonance in Polycrystalline Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
N. H. Nickel ◽  
E. A. Schiff
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Dangling Bond ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Motional Narrowing ◽  
G Value ◽  
Electron Paramagnetic

AbstractThe temperature dependence of the silicon dangling-bond resonance in polycrystalline (poly-Si) and amorphous silicon (a-Si:H) was measured. At room temperature, electron paramagnetic resonance (EPR) measurements reveal an isotropie g-value of 2.0055 and a line width of 6.5 and 6.1 G for Si dangling-bonds in a-Si:H and poly-Si, respectively. In both materials spin density and g-value are independent of temperature. While in a-Si:H the width of the resonance did not change with temperature, poly-Si exhibits a remarkable T dependence of ΔHpp. In unpassivated poly-Si a pronounced decrease of ΔHpp is observed for temperatures above 300 K. At 384 K ΔHpp reaches a minimum of 5.1 G, then increases to 6.1 G at 460 K, and eventually decreases to 4.6 G at 530 K. In hydrogenated poly-Si ΔHpp decreases monotonically above 425 K. The decrease of ΔHpp is attributed to electron hopping causing motional narrowing. An average hopping distance of 15 and 17.5 Å was estimated for unhydrogenated and H passivated poly-Si, respectively.

Sign in / Sign up

Export Citation Format

Share Document