Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition

Halide chemical vapor deposition (HCVD) allows for rapid growth while maintaining the purity afforded by a CVD process. While several shallow and deep defect levels have been identified in 6H HCVD substrates using electrical techniques, here we examine several different point defects found in 4H n-type HCVD SiC using electron paramagnetic resonance (EPR) spectroscopy. One spectrum, which exhibits axial symmetry and broadens upon heating, may represent a collection of shallow defects. The other prominent defect has the g tensor of the negatively charged carbon vacancy, but additional hyperfine lines suggest a more complex center. The role of these defects is not yet determined, but we note that the concentrations are similar to those found for the electrically detected defect levels, making them a reasonable source of electrically active centers.

Electron-Nuclear Double Resonance Study of the Zinc Vacancy in Zinc GERMANIUM PHOSPHIDE (ZnGeP2)

As-grown crystals of ZnGeP2 are highly compensated and contain significant concentrations of donors and acceptors. The dominant acceptor in ZnGeP2 is believed to be the zinc vacancy. This center is paramagnetic in its normal singly ionized state, and gives rise to an electron paramagnetic resonance (EPR) signal characterized by a resolved primary hyperfine interaction with two equivalent phosphorus nuclei adjacent to the vacancy. The present investigation has focused on electron-nuclear double resonance (ENDOR) measurements of additional hyperfine interactions which are not resolved in the regular EPR spectra. Principal values and principal axes directions for four additional phosphorus nuclei are determined from the ENDOR angular dependence. These parameters support the zinc-vacancy assignment for the acceptor and they provide an experimental check of wave functions generated in future computational modeling efforts.

Radical adducts of nitrosobenzene and 2-methyl-2-nitrosopropane with 12,13-epoxylinoleic acid radical, 12,13-epoxylinolenic acid radical and 14,15-epoxyarachidonic acid radical. Identification by h.p.l.c.-e.p.r. and liquid chromatography-thermospray-m.s

Linoleic acid-derived radicals, which are formed in the reaction of linoleic acid with soybean lipoxygenase, were trapped with nitrosobenzene and the resulting radical adducts were analysed by h.p.l.c.-e.p.r. and liquid chromatography-thermospray-m.s. Three nitrosobenzene radical adducts (peaks I, II and III) were detected; these gave the following parent ion masses: 402 for peak I, 402 for peak II, and 386 for peak III. The masses of peaks I and II correspond to the linoleic acid radicals with one more oxygen atom [L(O).]. The radicals are probably carbon-centred, because the use of 17O2 did not result in an additional hyperfine splitting. Computer simulation of the peak I radical adduct e.p.r. spectrum also suggested that the radical is carbon-centred. The peak I radical was also detected in the reaction of 13-hydroperoxylinoleic acid with FeSO4. From the above results, peak I is probably the 12,13-epoxylinoleic acid radical. An h.p.l.c.-e.p.r. experiment using [9,10,12,13-2H4]linoleic acid suggested that the 12,13-epoxylinoleic acid radical is a C-9-centred radical. Peak II is possibly an isomer of peak I. Peak III, which was observed in the reaction mixture without soybean lipoxygenase, corresponds to a linoleic acid radical (L.). The 12,13-epoxylinoleic acid radical, 12,13-epoxylinolenic acid radical and 14,15-epoxyarachidonic acid radical were also detected in the reactions of linoleic acid, linolenic acid and arachidonic acid respectively, with soybean lipoxygenase using nitrosobenzene and 2-methyl-2-nitrosopropane as spin-trapping agents.

EPR of VO2+ in KTiOPO4 Single Crystals

KTiOPO4 single crystals doped with V2O4 were grown from fluxes between 1323 and 1123 K with dimensions up to (10x5x5) mm3. Two crystallographically inequivalent centers of VO2+ in the occupation ratio of 10:1 were detected by EPR at room temperature. Their z axes of largest hyperfine splitting are oriented close to the directions of the very short Ti-O bonds of the two Ti in the structure. An energy difference for incorporation of VO2+ into these two sites of -9.4+ 1.7 kJ/mol per pm difference in bond lengths was obtained from the occupation ratio, the large limits of error being mainly due to uncertainties in the bond lengths. Additional hyperfine splitting caused by 31P nuclei as next-nearest neighbors was also resolved in most orientations.