This paper describes a study on the remote plasma etching of silicon-based semiconductor wafers after laser separation. Several process parameters having impact on the chip reliability, expressed as changes in die material strength, have been studied and optimized. The results show the potential of fluorine-based plasma processing for cleaning dies and improving die performance and thus have a role as a process enabling advanced packaging technologies.
The dynamic behaviour of coupled pairs of semiconductor lasers is studied using normal-mode theory, applied to one-dimensional (slab) and two-dimensional (circular cylindrical) real index confined structures. It is shown that regions of stable behaviour depend not only on pumping rate and laser separation, but also on the degree of guidance in the structures. Comparison of results between normal-mode and coupled-mode theories for these structures leads to the tentative conclusion that the accuracy of the latter is determined by the strength of self-overlap and cross-overlap of the symmetric and antisymmetric normal modes in the two lasers.
With the gaining demand for SiC semiconductor devices it is more and more challenging to meet the requirements for SiC volume production with the state of the art wafer dicing technology. In order to overcome this challenge the laser based dicing technology Thermal Laser Separation (TLS-DicingTM) was assessed for SiC volume production within the European project SEA4KET. This paper presents the key results of this project. It could be demonstrated that the demand of SiC volume production regarding throughput and cost as well as edge quality and electrical performance of diced chips can be met with TLS-DicingTM.
Stability Boundaries in Laterally-Coupled Pairs of Semiconductor Lasers
