Remote Plasma Etching of Backend Semiconductor Materials for Reliable Packaging

This paper describes a study on the remote plasma etching of silicon-based semiconductor wafers after laser separation. Several process parameters having impact on the chip reliability, expressed as changes in die material strength, have been studied and optimized. The results show the potential of fluorine-based plasma processing for cleaning dies and improving die performance and thus have a role as a process enabling advanced packaging technologies.

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H2 and N2 Remote Plasma Processing of Wurtzite-Like Oxides: Implications for Energy Applications

Plasma Processes and Polymers ◽

10.1002/ppap.201500210 ◽

2015 ◽

Vol 13 (1) ◽

pp. 147-160 ◽

Cited By ~ 3

Author(s):

Maria M. Giangregorio ◽

Giuseppe V. Bianco ◽

Pio Capezzuto ◽

Giovanni Bruno ◽

Maria Losurdo

Keyword(s):

Plasma Processing ◽

Remote Plasma ◽

Energy Applications

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Ultrathin silicon oxynitride films grown by Ar/N2O remote plasma processing

Journal of Applied Physics ◽

10.1063/1.367881 ◽

1998 ◽

Vol 83 (12) ◽

pp. 7635-7639 ◽

Cited By ~ 11

Author(s):

Bradley C. Smith ◽

H. Henry Lamb

Keyword(s):

Plasma Processing ◽

Silicon Oxynitride ◽

Remote Plasma

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Deposition of silicon-based dielectrics by remote plasma-enhanced chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(90)90808-x ◽

1988 ◽

Vol 86 (1-4) ◽

pp. 804-814 ◽

Cited By ~ 15

Author(s):

G. Lucovsky ◽

D.V. Tsu

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Remote Plasma ◽

Silicon Based

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Fabrication of Silicon Based Fuel Cell Electrodes by Selective Plasma Etching

ECS Transactions ◽

10.1149/1.2356169 ◽

2019 ◽

Vol 3 (1) ◽

pp. 479-482

Author(s):

Jose Geraldo A. Brito-Neto ◽

Shintaro Araki ◽

Soichi Shirako ◽

Masanori Hayase

Keyword(s):

Fuel Cell ◽

Plasma Etching ◽

Fuel Cell Electrodes ◽

Silicon Based

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Alternative Materials for Micro-Electro-Mechanical Device Construction

MRS Proceedings ◽

10.1557/proc-276-241 ◽

1992 ◽

Vol 276 ◽

Cited By ~ 2

Author(s):

R. H. Hackeit ◽

L. E. Larson

Keyword(s):

Plasma Etching ◽

Silicon Oxide ◽

Metal Films ◽

Device Processing ◽

Low Temperature Processing ◽

Alternative Materials ◽

Lift Off ◽

Mechanical Devices ◽

Silicon Based ◽

Process Constraints

ABSTRACTIn order to integrate micro actuators with III-V semiconductor devices, we have devised Micro-Electro-Mechanical devices (MEM's), constructed from materials and processes common to existing III-V device processing. These processes are substantially different from silicon based processes because of the requirements for low temperature processing and the use of gold-based metallizations.Our material choices include, vacuum deposited and plated metal films, silicon oxide and nitride dielectric layers, and polyimide layers and structures. Sacrificial layers are implemented with photoresist rather than the more common silicon dioxide. The processes available are based on the ‘lift off’ of unwanted areas of the metal films, wet plating of metals through openings in photoresist masks, and wet and plasma etching of metals and dielectrics.This paper will discuss why we are using these materials, the process constraints imposed by the materials, the measurement of some of the material properties, and will relate some progress in applications.

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ICP Etching of 4H-SiC Substrates

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.825 ◽

2013 ◽

Vol 740-742 ◽

pp. 825-828 ◽

Cited By ~ 5

Author(s):

Jerome Biscarrat ◽

Jean François Michaud ◽

Emmanuel Collard ◽

Daniel Alquier

Keyword(s):

Process Parameters ◽

Plasma Etching ◽

Inductively Coupled Plasma ◽

Etch Rate ◽

Effective Technique ◽

Working Pressure ◽

Inductively Coupled ◽

Icp Etching ◽

High Etch Rate ◽

The Impact

Due to its inert chemical nature, plasma etching is the most effective technique to pattern SiC. In this paper, dry etching of 4H-SiC substrate in Inductively Coupled Plasma (ICP) has been studied in order to evaluate the impact of process parameters on the characteristics of etching such as etch rate and trenching effect. Key process parameters such as platen power and ICP coil power prove to be essential to control the SiC etch rate. On the other hand, the ICP coil power and the working pressure mainly master the trenching effect. Our results enlighten that high etch rate with minimal trenching effect can be obtained using high ICP coil power and low working pressure.

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