Performance Improvement in E-Gun Deposited SiOx- Based RRAM Device by Switching Material Thickness Reduction
2022 ◽
Vol 2161
(1)
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pp. 012040
Keyword(s):
Abstract A performance improvement by reduction in switching material thickness in a e-gun deposited SiOx based resistive switching memory device was investigated. Reduction in thickness cause thinner filamentary path formation during ON-state by controlling the vacancy defects. Thinner filament cause lowering of operation current from 500 μA to 100 μA and also improves the reset current (from >400 μA to <100 μA). Switching material thickness reduction also cause the forming free ability in the device. All these electrical parametric improvements enhance the device reliability performances. The device show >200 dc endurance, >3-hour data retention and >1000 P/E endurance with 100 ns pulses.
2010 ◽
Vol 159
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pp. 333-337
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2017 ◽
Vol 5
(37)
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pp. 9799-9805
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2015 ◽
Vol 54
(2)
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pp. 021802
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2012 ◽
Vol 51
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pp. 101101
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2012 ◽
Vol 51
(10R)
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pp. 101101
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2020 ◽
Vol 20
(3)
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pp. 371-378
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