double barrier structure
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2021 ◽  
Vol 2103 (1) ◽  
pp. 012201
Author(s):  
D V Khomitsky ◽  
E A Lavrukhina

Abstract A model of quasistationary states is constructed for the one-dimensional edge states propagating along the edge of a two-dimensional topological insulator based on HgTe/CdTe quantum well in the presence of magnetic barriers with finite transparency. The lifetimes of these quasistationary states are found analytically and numerically via different approaches including the solution of the stationary Schrödinger equation with complex energy and the solution of the transmission problem for a double barrier structure. The results can serve as a guide for determining the parameters of magnetic barriers creating the quantum dots where the lifetimes for the broadened discrete levels are long enough for manipulation with their occupation numbers by external fields.


2020 ◽  
Vol 101 (24) ◽  
Author(s):  
J. Klier ◽  
I. V. Krainov ◽  
A. P. Dmitriev ◽  
I. V. Gornyi

Entropy ◽  
2019 ◽  
Vol 21 (2) ◽  
pp. 209 ◽  
Author(s):  
Xiaomei Chen ◽  
Rui Zhu

In this work, pumped currents of the adiabatically-driven double-barrier structure based on the pseudospin-1 Dirac–Weyl fermions are studied. As a result of the three-band dispersion and hence the unique properties of pseudospin-1 Dirac–Weyl quasiparticles, sharp current-direction reversal is found at certain parameter settings especially at the Dirac point of the band structure, where apexes of the two cones touch at the flat band. Such a behavior can be interpreted consistently by the Berry phase of the scattering matrix and the classical turnstile mechanism.


2019 ◽  
Vol 114 (5) ◽  
pp. 053509 ◽  
Author(s):  
Biying Nie ◽  
Jianliang Huang ◽  
Chengcheng Zhao ◽  
Wenjun Huang ◽  
Yanhua Zhang ◽  
...  

Optik ◽  
2018 ◽  
Vol 170 ◽  
pp. 314-320 ◽  
Author(s):  
A.S. Abdalla ◽  
M.H. Eisa ◽  
R. Alhathlool ◽  
O. Aldaghri

2017 ◽  
Vol 26 (04) ◽  
pp. 1740022 ◽  
Author(s):  
Banasree Das ◽  
Manas Kumar Parai

In this paper, novel features offered by Resonant Tunneling Diode (RTD) are reviewed by simulating it under different conditions. GaAs/AlGaAs based RTD is used as the reference one to obtain the characteristics due to parametric variations. To fulfil this purpose a simple model of resonant electronic transport through a double-barrier structure is developed. I-V characteristics are studied by varying barrier parameters and well width. Different peak and valley currents are measured under these conditions. For the same set of parameters both symmetric and asymmetric cases are considered. Different materials of lower effective mass are also taken into consideration to improve Peak to Valley Ratio (PVR). The Indium (In) based materials are considered to compare the characteristics obtained from the conventional GaAs based RTD structure. All these proposed structures are simulated using Silvaco Atlas software.


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