Application of PDC Analysis to Identify Effect of Electrical Tracking on Conductivity of LLDPE-NR Nanocomposite

Polymeric nanocomposites are widely used for high voltage outdoor insulating application due to their good electrical performance. Recently, SiO2, TiO2 and MMT nanofillers are being used as filler because there are listed as main nanofiller commonly used in electrical engineering. Natural rubber (NR) was used because the nature of the interphase is found to affect viscoelasticity and it develops several interphases with the Linear Low-Density Polyethylene (LLDPE) matrix. One of the problems associated with outdoor polymeric insulators is tracking of the surface which can directly influence the reliability of the insulator. This paper presents the outcome of an experimental study to determine the conductivity level of the LLDPE-NR compound, filled with different amount of SiO2, TiO2 and MMT nanofiller using Polarization and Depolarization Current (PDC) measurement technique. LLDPE and NR with the ratio composition of 80:20 were selected as a base polymer. Results show that different compositions as well as the surface physical conditions affect the PDC measurement results.

Large Area, Rubber Stamped Plastic Circuits for Electronic Paper

ABSTRACTThis paper illustrates the use of a high resolution form of rubber stamping, known as microcontact printing (μCP), for patterning plastic active matrix drive circuitry designed for electronic paper. The high resolution (∼1 [.mu]m) of the printed elements, the large area coverage (∼1 sq. ft.) and the good electrical performance of these systems suggest that the methods, materials and processing sequences may be attractive for realistic applications of plastic electronics.

Multiple Through-Wafer Interconnects for Stacking of Microsystems

This paper describes a novel technology for multiple wafer frontside to backside interconnects, which has been applied to a multifunctional interconnect layer for an integrated microphone for hearing aid applications. Besides the interconnect layer with relatively large through-holes the stack consists of the microphone itself and an integrated circuit chip for signal conditioning. The patterning of the metallization on the interconnect wafer has been done using electrodepositable photoresist as mold for electroplating of a variety of metals. For the interconnect metallization we use copper. The bonding pads on the microphone side of the interconnect layer have been provided with under bump metallizations (UBM) and solder bumps. The IC side features a top surface metallization (TSM) suitable for conductive adhesive bonding. The realized feedthrough wires show good electrical performance in terms of low series resistance (100 mΩ) and small parasitic capacitance (< 1 pF).

Multilevel Interconnection Technologies and Future Requirements for Logic Applications

ABSTRACTThe performance and cost of the logic ICs is more and more dominated by the interconnections. Reducing the capacitances in the advanced processes, especially with low k dielectrics, is a priority, while a differentiated approach can be applied for lowering the connection resistances, e.g. in adapting the interconnect material to specific levels. Integrating new materials leads to difficult trade-offs in order to achieve a good electrical performance of the circuit. Finally the increased number of levels of interconnection addresses other fields like integration density, defectivity reduction or cost.