Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature Applications

In this work, the impact of channel implantations (IMP) on the electrical characteristics of SiC n-and p-MOSFETs and analog SiC-CMOS operational amplifiers (OpAmp) is investigated. For this purpose, MOSFETs and Miller OpAmps with and without IMP were fabricated and electrically characterized from room temperature up to 350°C. For devices with IMP the absolute values of the threshold voltages of n-and p-MOSFETs were reduced by 1.5 V and the mobility of the n-MOSFET was increased from 13 to 23 cm2/Vs whereas the mobility of the p-MOSFET remained constant at 6 cm2/Vs. For the resulting OpAmp with IMP, the common-mode input voltage range as well as the open loop gain was increased by 1.5 V and 4 dB compared to non-implanted devices. This improvement was observed across the entire analyzed temperature range from room temperature up to 350°C.

Assessment on the Adequacy of Current Supply Testing Methods in CMOS Operational Amplifier

As the CMOS innovation is downsizing, spillage power has gotten one of the most basic structure worries for the chip fashioner. This paper proposes examination on the adequacy of current gracefully testing strategies in cmos operational amplifiers. In this work, a two phase operational amplifier is structured and faults are infused utilizing 250nm innovation. We will assess the viability of current checking systems in distinguishing Bridge and open deformities in CMOS operational amplifiers. We ought to assess the identification capacities by utilizing two current testing strategies. The principal strategy comprises the oversight of the transient flexible current (IDDT) and the subsequent procedure comprises the observing of quiet gracefully current (IDDQ).The most probable resistive and open defects are infused utilizing fault infusion extra transistors. Exhibitions of the CMOS operational amplifier are additionally assessed after each issue infusion. Spice stimulation ought to be done to compare about the proposed test systems and assess the best performing one. We ought to assess the recognition abilities by utilizing two current testing procedures. The primary system comprises the oversight of the transient gracefully current (IDDT) and the subsequent method comprises the checking of quiet flexibly current (IDDQ). The most probable resistive and open deformities are infused utilizing fault infusion extra transistors. Exhibitions of the CMOS operational amplifier are likewise assessed after each fault infusion. Flavor re-enactments ought to be done to look at the proposed test strategies and assess the best performing one