Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature Applications

2020 ◽  
Vol 1004 ◽  
pp. 1123-1128
Author(s):  
Matthaeus Albrecht ◽  
David Pérez ◽  
R. Christian Martens ◽  
Anton J. Bauer ◽  
Tobias Erlbacher
Keyword(s):  
Room Temperature ◽  
Input Voltage ◽  
Open Loop ◽  
Electrical Characteristics ◽  
Voltage Range ◽  
Threshold Voltages ◽  
The Common ◽  
Cmos Operational Amplifiers ◽  
The Impact ◽  
Implanted Devices

In this work, the impact of channel implantations (IMP) on the electrical characteristics of SiC n-and p-MOSFETs and analog SiC-CMOS operational amplifiers (OpAmp) is investigated. For this purpose, MOSFETs and Miller OpAmps with and without IMP were fabricated and electrically characterized from room temperature up to 350°C. For devices with IMP the absolute values of the threshold voltages of n-and p-MOSFETs were reduced by 1.5 V and the mobility of the n-MOSFET was increased from 13 to 23 cm2/Vs whereas the mobility of the p-MOSFET remained constant at 6 cm2/Vs. For the resulting OpAmp with IMP, the common-mode input voltage range as well as the open loop gain was increased by 1.5 V and 4 dB compared to non-implanted devices. This improvement was observed across the entire analyzed temperature range from room temperature up to 350°C.

VEGA & RIGEL: New tiny high temperature adjustable voltage regulators for reduced PCB footprint and extended reliability of medium and high temperature systems

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000093-000098
Author(s):  
Pierre Delatte ◽  
Etienne Vanzieleghem ◽  
Thomas François ◽  
Jean-Christophe Doucet
Keyword(s):  
High Temperature ◽  
Operating Temperature ◽  
Thermal Characterization ◽  
Input Voltage ◽  
Voltage Regulators ◽  
Voltage Range ◽  
Load Line ◽  
External Resistor ◽  
The Impact ◽  
Total Accuracy

This paper presents two new tiny high-temperature adjustable voltage regulators. CHT-VEGA can regulate a 5V ±10% input voltage to an output within the range 1.1V to 3.6V and delivering up to 500mA at 225°C (junction). The output voltage is set by an external resistor divider and is maintained within +/−5% total accuracy in all load, line and temperature conditions. The second device, CHT-RIGEL, supports a wide input voltage range up to 30V; its output is adjustable between 1.8V and 24V, with up to 100mA capability at 225°C. Both chips feature a thermal shut-down with a threshold in the 250∼300°C range: the first over-temperature protection of this kind in high temperature devices. CISSOID created a new TDFP SMD package that combines tiny size and good thermal resistance. A detailed thermal characterization is presented, as well as what it means for the operating temperature, and the impact on PCB footprint and system cost. As a conclusion, will be highlighted the benefits of using such ICs rated 225°C at junction level, even if the ambient temperature of the application remains low (e.g. 175°C), and in particular the impact on reduction of the PCB footprint, compared to 175–210°C ratings.

Electroluminescence of Erbium in Oxygen Doped Silicon

1996 ◽  
Vol 422 ◽  
Author(s):  
S. Lombardo ◽  
S. U. Campisano ◽  
G. N. Van Den Hoven ◽  
A. Polman
Keyword(s):  
Room Temperature ◽  
Vapour Deposition ◽  
Excitation Cross Section ◽  
Chemical Vapour ◽  
Impact Excitation ◽  
Silicon Substrates ◽  
Electrical Characteristics ◽  
Annealing Furnace ◽  
Doped Silicon ◽  
The Impact

AbstractIt is demonstrated room-temperature electroluminescence at 1.54 μm in erbiumimplanted oxygen doped silicon (27 at. 0), due to intra-4f transitions of the Er3+. The luminescence is electrically stimulated by biasing metal-(Si:O,Er)-p+ silicon diodes. The 30 nm thick Si:O,Er films are amorphous layers deposited onto silicon substrates by chemical vapour deposition of SiH4 and N20, doped by ion implantation with Er to a concentration up to ≈ 1.5 at.%, and annealed in a rapid thermal annealing furnace. The most intense electroluminescence is obtained in samples annealed at 400°C in reverse bias under breakdown condition and it is attributed to impact excitation of erbium by hot carriers injected from the Si into the Si:O,Er layer. The electrical characteristics of the diode are studied in detail and related to the electroluminescence characteristics. A lower limit for the impact excitation cross-section of ≈6×10−16 cm2 is obtained.

300°C Silicon Carbide Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 730-733 ◽  
Author(s):  
Zachary Stum ◽  
Vinayak Tilak ◽  
Peter A. Losee ◽  
Emad A. Andarawis ◽  
Cheng Po Chen
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Open Loop ◽  
Common Source ◽  
Loop Gain ◽  
Simple Circuit ◽  
The Common ◽  
Circuit Components ◽  
The Individual

MOSFET-based integrated circuits were fabricated on silicon carbide (SiC) substrates. SiC devices can operate at much higher temperatures than current semiconductor devices. Simple circuit components including operational amplifiers and common source amplifiers were fabricated and tested at room temperature and at 300°C. The common source amplifier displayed gain of 7.6 at room temperature and 6.8 at 300°C. The operational amplifier was tested for small signal open loop gain at 1kHz, measuring 60 dB at room temperature and 57 dB at 300°C. Stability testing was also performed at 300°C, showing very little drift at over 100 hours for the individual MOSFETs and the common source amplifier.

Comparison of Dc-Dc SEPIC, CUK and Flyback Converters Based LED Drivers

2020 ◽  
pp. 99-107
Author(s):  
Erdal Sehirli
Keyword(s):  
Integrated Circuit ◽  
Closed Loop ◽  
Input Voltage ◽  
Open Loop ◽  
Current Sensor ◽  
Switching Frequency ◽  
Led Driver ◽  
Advantages And Disadvantages ◽  
Led Drivers ◽  
Conduction Mode

This paper presents the comparison of LED driver topologies that include SEPIC, CUK and FLYBACK DC-DC converters. Both topologies are designed for 8W power and operated in discontinuous conduction mode (DCM) with 88 kHz switching frequency. Furthermore, inductors of SEPIC and CUK converters are wounded as coupled. Applications are realized by using SG3524 integrated circuit for open loop and PIC16F877 microcontroller for closed loop. Besides, ACS712 current sensor used to limit maximum LED current for closed loop applications. Finally, SEPIC, CUK and FLYBACK DC-DC LED drivers are compared with respect to LED current, LED voltage, input voltage and current. Also, advantages and disadvantages of all topologies are concluded.

The impact of applying the Common Customs Tariff on the armenian export of Cut and Polished Gems to Russia

2019 ◽  
pp. 33-41
Author(s):  
V. L. Harutyunyan ◽  
S. V. Dokholyan ◽  
A. R. Makaryan
Keyword(s):  
Manufacturing Sector ◽  
Practical Implication ◽  
Dominant Role ◽  
New Technology ◽  
Manufacturing Companies ◽  
Medium Term ◽  
Diamond Cutting ◽  
Global Trends ◽  
The Common ◽  
The Impact

The presented study discusses the issues of applying the Common Customs Tariff (CCT) rates of the Eurasian Economic Union (EAEU) on rough diamonds and the impact thereof on the exports of stones cut and polished inArmeniaand then exported toRussia.Aim. The study aims to identify the possible strategies Armenian diamond cutting and polishing companies could adopt as a response to the application of the CCT rates on rough diamonds and how it would affect exports to various destinations, namely to Russia.Tasks. The authors analyze the current state of the gems and jewelry sector and substantiate the need to either integrate it into the jewelry manufacturing sector or to apply various strategies to facilitate exports to either Russia or other destinations in the medium term in response to the application of the CCT rates.Methods. This study uses general scientific methods of cognition, including analytical and methodological approaches and elements of forecasting. Possible strategies the Armenian diamond cutting and polishing companies could adopt in the medium term in response to the application of the EAEU CCT rates are determined using the analytical research method, forecasts in the context of the developments in the Armenian gem processing and jewelry market and global trends, statistical data on the imports and exports of cut and polished gems and jewelry for 2014–2018 published by the UN Comtrade Statistics.Results. Statistics on the exports of processed diamonds from 2014 to 2018 highlights the issue associated with the loss of competitiveness suffered by Armenian companies (mainly in comparison with Indian diamond cutters). The major global trends in the diamond cutting and polishing business indicate that it could be virtually impossible for Armenian cutters and polishers to compete with Indian companies in the medium term if they do not comes to investing in new technology to achieve operational efficiency. For these companies, it is important not to lose the Russian market due to an increase in the tariff rate and concentrate on the processing of gems that are larger than 1 carat. Another strategy to avoid an increase in the customs tariff rates would depend on the Armenian government’s ability to negotiate with Russia in respect of direct imports of diamond stones from Russian manufactures. Two other options for Armenian cutters involve focusing on cutting and polishing of rubies, sapphires, emeralds, etc. or integrating into the jewelry sector either by being the primary supplier or by considering this business as a channel to sell processed diamond stones by setting up their own jewelry manufacturing companies.Conclusions. With CCT going into effect in January 2021 and India’s dominant role in the diamond cutting and polishing business, Armenia needs to carefully consider all of the strategies the Armenian companies could adopt, as discussed above. As a member state of the EAEU, Armenia freely exports to Russia, however, further exports to Russia would depend on Armenia’s ability to ensure that cost-effective operations are in place, or to concentrate on the processing of precious gems rather than diamonds, or to switch to the manufacturing of jewelry items as a major export item.Practical Implication. The findings of this study could be of interest to the Ministry of Economy of the Republic of Armenia and Business Armenia that could be used in elaborating the strategy for the development of Armenian gems and jewelry sector of the economy.

The Impact of Applying the Common Customs Tariff on Armenian Exports of Tobacco Products

2020 ◽  
Vol 26 (4) ◽  
pp. 358-365
Author(s):  
V. L. Harutyunyan ◽  
S. V. Dokholyan ◽  
A. R. Makaryan
Keyword(s):  
Tobacco Products ◽  
The Common ◽  
The Impact

Marine Quality Standards: Their Derivation and Application in the United Kingdom

1985 ◽  
Vol 17 (6-7) ◽  
pp. 1187-1198 ◽  
Author(s):  
G. Mance ◽  
A. R. O'Donnell
Keyword(s):  
Coastal Waters ◽  
Sublethal Effects ◽  
Quality Standards ◽  
Toxicity Data ◽  
Marine Life ◽  
Nickel Zinc ◽  
The United Kingdom ◽  
The Common ◽  
Lead Nickel ◽  
The Impact

This paper discusses the derivation of environmental quality standards for coastal waters and the difficulties of using such standards for controlling industrial discharges. Attention is focused on the common List II substances, copper, chromium, lead, nickel, zinc and arsenic - and their effects on marine life. The adequacy of existing toxicity data is discussed and it is concluded that long exposure tests are required to provide information on sublethal effects. Such data are currently limited. It is also important that consideration be given to the effects that reducing salinities and increasing temperatures have in increasing the toxicity of these substances. The complexity of interpreting the results of laboratory toxicity data to coastal waters is discussed with reference to a study of the impact of an industrial discharge.

Design Technique of High Power Efficiency LLC DC-DC Converters for Photovoltaic Cells

2018 ◽  
Vol 2 (1) ◽  
pp. 30
Author(s):  
Hisatsugu Kato ◽  
Yoichi Ishizuka ◽  
Kohei Ueda ◽  
Shotaro Karasuyama ◽  
Atsushi Ogasahara
Keyword(s):  
High Power ◽  
Power Efficiency ◽  
Photovoltaic Cells ◽  
Input Voltage ◽  
Design Technique ◽  
Load Range ◽  
Voltage Range ◽  
Simulation Results ◽  
Secondary Side ◽  
High Power Efficiency

This paper proposes a design technique of high power efficiency LLC DC-DC Converters for Photovoltaic Cells. The secondary side circuit and transformer fabrication of proposed circuit are optimized for overcoming the disadvantage of limited input voltage range and, realizing high power efficiency over a wide load range of LLC DC-DC converters. The optimized technique is described with theoretically and with simulation results. Some experimental results have been obtained with the prototype circuit designed for the 80 - 400 V input voltage range. The maximum power efficiency is 98 %.

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