Deep-Level Defects in a Photovoltaic Converter with an Antireflection Porous Silicon Film Formed by Chemical Stain Etching

2019 ◽  
Vol 45 (2) ◽  
pp. 145-148
Author(s):  
V. V. Tregulov ◽  
V. G. Litvinov ◽  
A. V. Ermachikhin
Author(s):  
В.В. Трегулов ◽  
В.Г. Литвинов ◽  
А.В. Ермачихин

AbstractDefects in the semiconductor structure of a photovoltaic converter (PVC) with a p – n junction and antireflection film of porous silicon manufactured using chemical stain etching were studied by the current deep-level transient spectroscopy technique. The influence of the regime of porous silicon film formation on the transformation of deep-level defects and the main PVC characteristics is explained.


2010 ◽  
Vol 663-665 ◽  
pp. 1142-1145
Author(s):  
Yuan Ming Huang ◽  
Bao Gai Zhai ◽  
Qing Lan Ma ◽  
Ming Meng

During the chemical synthesis nanometer-sized particles of ferrous iron oxide were in situ infiltrated into the mesopores in a porous silicon film. The microstructures of porous silicon and the magnetic properties of the nanometer-sized particles of the ferrous iron oxide were characterized with scanning electron microscopy, X-ray diffractometry, and the hysteresis loop measurement, respectively. Our results have demonstrated that the magnetic properties of the nanometer-sized Fe3O4 particles can be dramatically modified when they are confined into the mesopores of the porous silicon film.


Silicon ◽  
2019 ◽  
Vol 12 (7) ◽  
pp. 1761-1768
Author(s):  
Lary H. Slewa ◽  
Tariq A. Abbas ◽  
Naser M. Ahmed ◽  
Z. Hassan
Keyword(s):  

2002 ◽  
Vol 737 ◽  
Author(s):  
Lilyanna Pérez ◽  
Marjorie Flores ◽  
J. Avalos ◽  
L. San Miguel ◽  
O. Resto ◽  
...  

ABSTRACTIn this research nanometric particles from luminescent (625nm) porous silicon film were synthesized. This particles were later inoculated in bacterial strains of B. subtilis (BSi) and K. pneumoniae (KSi). A comparison of the behavior of their growth curve and the ones reported for C. xerosis (XSi) and E. coli (ESi) in presence of silicon nanoparticles is presented. The growth curve of BSi, as well as the KSi, present changes compared to their standard curves. The BSi growth curve grows below the standard curve after the fifth hour, while in the KSi this happens after the eighth hour. Based on our preliminary findings we can speculate that at this point in time a critical population is present, and this may give rise to the possible incorporation of the silicon particles by the bacteria, or a possible pleomorphism inhibits reproduction. The stationary region, in both cases, takes place sooner than in the standard curve. No significant oscillations are observed in any case, which differs form the XSi curve, were oscillations of intervals of almost 1 hour were reported. In addition, these curves have a different behavior when compared to the ESi growth curve, in which no significant differences between the standard and the particle containing sample were reported.


1997 ◽  
Vol 297 (1-2) ◽  
pp. 9-12 ◽  
Author(s):  
D Dimova-Malinovska ◽  
M Sendova-Vassileva ◽  
N Tzenov ◽  
M Kamenova
Keyword(s):  

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