Термоэлектрические свойства твердых растворов (CuInSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(In-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-)-=SUB=-x-=/SUB=-

The results of studying the temperature dependences of electrical conductivity, thermoelectric coefficient, Hall mobility of charge carriers, total and electronic thermal conductivity, as well as phonon thermal resistance of alloys of (CuInSe2)1-x(In2Te3)x solid solutions at x=0.005 and 0.0075 are presented. The values ​​of these parameters for certain temperatures were used to calculate the values ​​of the thermoelectric figure of merit of the indicated compositions. It turned out that as the temperature rises, the thermoelectric figure of merit tends to grow strongly, from which it can be concluded that these materials can be used in the manufacture of thermoelements.

The Effect of Sn Doping on the Thermoelectric Properties of SiGe Using First Principle Technique

The thermoelectric properties of hexagonal SiGe doped with Sn with doping percentage of 12.5% and 25% were investigated using linearised augmented plane wave method using the WIEN2k package and semiclassical Boltztmann Transport equation using the BoltzTraP software for the purpose of understanding the role of Sn as a dopant in the SiGe. For temperature range of 300 to 1000 K, it can be seen that by doping with Sn, there is an improvement in overall thermal conductivity of the samples with the highest improvement is in the 25% doped sample. The conductivity vs temperature for 25% Sn doped SiGe also shows higher value through temperature range from 300 K to 1000 K, however the Seebeck coefficient decreases with Sn doping percentage for the same temperature range. Due to lower Seebeck coefficient and higher thermal conductivity values, the overall thermoelectric coefficient, ZT, of the doped compound is lower than the SiGe values with highest ZT equal to 0.29 and 0.17 at 650 K for 12.5% and 25% respectively while the ZT of simulated SiGe at 650 K is 0.35. Thus 25% Sn doping actually reduce the ZT but enhanced the thermal and electrical conductivity of SiGe for temperature range of 300 to 1000 K.

Insights into the thermoelectric properties of SnSe from ab initio calculations

A good description of the thermoelectric coefficient is achieved using a temperature-dependent relaxation time and a detailed analysis of the phonon spectrum.

Synthesis and Properties of Highly Efficient Thermoelectric Materials Based on Lead Telluride with Antimony and Silver Impurity

The paper presents the results of research of X-ray diffraction and thermoelectric parameters (thermoelectric coefficient α, electrical conductivity σ and thermal conductivity coefficient k) of materials based on Lead Telluride: PbTe, PbTe:Sb, PbTe-Sb2Te3, Pb18Ag1Sb1Te20, Pb18Ag2Te20 and PbTe-Ag2Te. Established that the highest values of thermoelectric figure of merit have samples of PbTe:Sb (0,3 at.%) and system Pb18Ag1Sb1Te20, Pb18Ag2Te20. For PbTe:Sb is due to a significant increase of the electrical conductivity. For the other two materials is due to a increase the thermoelectric coefficient and a significant decrease of thermal conductivity compared to pure PbTe.