Методики исследования электрического контактного сопротивления в структуре металлическая пленка--полупроводник

The electrical contact resistance significantly affects the efficiency of thermoelements. In the case of high doped thermoelectric materials, the tunneling mechanism of conductivity prevails at metal-semiconductor interface, which makes it possible to obtain a contact resistance of less than 10-8 Ohm•m2. Low resistance values significantly complicate its experimental determination. Work present three techniques and a measuring stand for the investigation of contact resistance. The techniques are based on the measurement of the total electrical resistance, which consists of transient contact resistance and the resistance of the thermoelectric material with its subsequent exclusion. The developed techniques differ in the arrangement of the investigated contacts on the samples, in the methods of measurement and processing of the obtained results, and make it possible to determine the specific contact resistance of the order of 10-10 Ohm•m2.

Analysis of the Transient Contact Resistance of Composite Copper-Graphite Material Obtained Using Plasma Spraying Technology

The article is devoted to the analysis of the internal structure and properties of a copper-graphite coating applied to a copper electrode. The article provides a calculation of the transient contact resistance of electrodes with a coating obtained using plasma spraying technology. Copper-graphite powder with high arc resistance was used as a spraying substance. Coated electrodes were tested for erosion resistance by an arc at currents of several kiloamperes. The aim of the work is to determine the effect of the composition and internal structure of the coating on the transient processes in the contact gap.