scholarly journals Методики исследования электрического контактного сопротивления в структуре металлическая пленка--полупроводник

2022 ◽  
Vol 56 (1) ◽  
pp. 31
Author(s):  
М.Ю. Штерн ◽  
И.С. Караваев ◽  
М.С. Рогачев ◽  
Ю.И. Штерн ◽  
Б.Р. Мустафоев ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Electrical Resistance ◽  
Electrical Contact ◽  
Specific Contact Resistance ◽  
Electrical Contact Resistance ◽  
Semiconductor Interface ◽  
Tunneling Mechanism ◽  
Specific Contact ◽  
Transient Contact ◽  
Methods Of Measurement

The electrical contact resistance significantly affects the efficiency of thermoelements. In the case of high doped thermoelectric materials, the tunneling mechanism of conductivity prevails at metal-semiconductor interface, which makes it possible to obtain a contact resistance of less than 10-8 Ohm•m2. Low resistance values significantly complicate its experimental determination. Work present three techniques and a measuring stand for the investigation of contact resistance. The techniques are based on the measurement of the total electrical resistance, which consists of transient contact resistance and the resistance of the thermoelectric material with its subsequent exclusion. The developed techniques differ in the arrangement of the investigated contacts on the samples, in the methods of measurement and processing of the obtained results, and make it possible to determine the specific contact resistance of the order of 10-10 Ohm•m2.

scholarly journals Fabrication of Skutterudite-Based Tubular Thermoelectric Generator

Energies ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1106 ◽  
Author(s):  
Hanhwi Jang ◽  
Jong Bae Kim ◽  
Abbey Stanley ◽  
Suhyeon Lee ◽  
Yeongseon Kim ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Thermoelectric Generator ◽  
Thermal Contact ◽  
Electrical Contact ◽  
Specific Contact Resistance ◽  
Electrical Contact Resistance ◽  
Plasma Sintering ◽  
Planar Substrate ◽  
Specific Contact ◽  
Tubular Thermoelectric Generator

The conversion efficiency of the thermoelectric generator (TEG) is adversely affected by the quality of thermal contact between the module and the heat source. TEGs with the planar substrate are not suitable for the curved heat sources. Several attempts have been made to tackle this issue by fabricating complex tubular-shaped TEGs; however, all efforts have been limited to low-temperature applications. Furthermore, the electrical contact resistance of the module is critical to achieving a high-power output. In this work, we developed the tubular TEG with significantly low specific contact resistance by optimizing the joining process. We show that the modified resistance welding (MRW) performed by spark plasma sintering (SPS) is an efficient joining method for the fabrication of the TE module, with high feasibility and scalability. This research seeks to suggest important design rules to consider when fabricating TEGs.

Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing

2017 ◽  
Vol 897 ◽  
pp. 399-402 ◽  
Author(s):  
Milantha de Silva ◽  
Teruhisa Kawasaki ◽  
Takamaro Kikkawa ◽  
Shinichiro Kuroki
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Laser Annealing ◽  
Electrical Contact ◽  
Nickel Silicide ◽  
Specific Contact Resistance ◽  
Low Resistance ◽  
Specific Contact ◽  
Face Side ◽  
Non Equilibrium

Non-equilibrium laser silicidations for low-resistance ohmic contact to 4H-SiC C-face with Titanium was demonstrated. Ti is one of carbon-interstitial type metals. In a conventional nickel silicide (NiSi) electrode on SiC, a carbon agglomeration at the silicide/SiC interface occurs, and contact resistance becomes larger. For suppressing the carbon agglomeration, in this research, nanoseconds non-equilibrium laser annealing was introduced, and also Ti was introduced to form both silicide and carbide. Ti (75, 100 nm)/SiC and Ni (75, 100 nm)/SiC contacts were formed on C-face side of 4H-SiC substrates. Electrical contact properties were investigated after 40 nanoseconds pulse laser annealing in Ar ambient and rapid thermal annealing. As the result, In the case of laser annealing, the lowest specific contact resistance of 2.4×10-4 Ωcm2 was obtained in Ti (75 nm)/SiC sample in the laser power of 2.5 J/cm2.

Experimental Investigations upon the Electrical Resistance of Microcontacts

2013 ◽  
Vol 705 ◽  
pp. 365-370 ◽  
Author(s):  
Marilena Glovnea ◽  
Cornel Suciu
Keyword(s):  
Contact Resistance ◽  
Contact Area ◽  
Electrical Resistance ◽  
Applied Load ◽  
Electrical Contact ◽  
Constant Current ◽  
Load Force ◽  
Experimental Investigations ◽  
Electrical Contact Resistance ◽  
Force Contact

An important parameter in MEMS design is the electrical contact resistance. This depends on material conductibility, on the geometry of the contacting surfaces, on the applied load and on the current passing through the contact. This work aims to experimentally investigate the dependence between: electrical contact resistance and contact load force, contact resistance and contact area and contact perimeter for constant current through a microcontact.

Ohmic Contact in P-HEMT Wafer Using Metallization with Ge/Au/Ni/Au

2014 ◽  
Vol 896 ◽  
pp. 351-353
Author(s):  
Asban Dolah ◽  
Muhammad Azmi Abd Hamid ◽  
Mohamad Deraman ◽  
Ashaari Yusof ◽  
Nor Azhadi Ngah ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Specific Contact Resistance ◽  
Semiconductor Interface ◽  
Transmission Line Method ◽  
Metal Thickness ◽  
Specific Contact ◽  
Lift Off ◽  
Electrical Characterizations ◽  
Metal Layers

In this study, Ohmic contact were fabricated on AlGaAs HEMTs structure. A good metal-semiconductor interface are essentially for achieving lower specific contact resistance. An AlGaAs epi wafer was supply by the vendor. AlGaAs substrate was cleaned using wet chemical etching. Electrodes were fabricated through a sequenced of lithography, cleaning, sputtering and lift-off processes. The electrodes were made with metal layers of Ge, Au and Ni. Parameters such as metal thickness, annealing temperatures (from 300°C to 400°C) and annealing time were varies during fabrication process. Electrical characterizations after annealing are carried out using transmission line method (TLM) to obtain the specific contact resistance. Annealing temperature between 340°C to 360°C produced contact resistance below 5 x 10ˉ³Ω/cm-2.

Electrical Modelling and Characterisation of Alloyed Ohmic Contacts

1993 ◽  
Vol 318 ◽  
Author(s):  
Geoffrey K. Reeves ◽  
Patrick W. Leech ◽  
H. Barry Harrison
Keyword(s):  
Contact Resistance ◽  
Transmission Line ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Realistic Model ◽  
Specific Contact Resistance ◽  
Transmission Line Model ◽  
Semiconductor Interface ◽  
Line Model ◽  
Specific Contact

ABSTRACTThis paper briefly reviews the standard Transmission Line Model (TLM) commonly used to measure the specific contact resistance of a planar ohmic contact. It is proposed that in the case of a typical Au-Ge-Ni alloyed ohmic contact, a more realistic model would need to take into account the presence of the alloyed layer at the metal-semiconductor interface. An alternative is described which is based on three contact layers and the two interfaces between them, thus forming a Tri-Layer Transmission Line Model (TLTLM). Expressions are given for the contact resistance Rc and the contact end resistance Re of this structure, together with a current division factor, f. Values for the parameters of this model are inferred from experimentally reported values of Rc and Re for two types of contact.

The Interplay of Nanocontact and Electrical Properties of ZnO and InP Nanowires and Polyaniline Nanofibers

2009 ◽  
Vol 1198 ◽  
Author(s):  
Yen-Fu Lin ◽  
Wen-Bin Jian
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Contact Resistance ◽  
Ohmic Contacts ◽  
Electrical Contact ◽  
Schottky Contacts ◽  
Specific Contact Resistance ◽  
Electrical Contact Resistance ◽  
Polyaniline Nanofibers ◽  
Current Voltage

AbstractThe interface problems in nanomaterial based electronics play important roles. We have learned that the nanocontact, due to its reduced contact area, could give a high electrical contact resistance and a nonlinear current-voltage behavior though the specific contact resistance is in the same order of magnitude as that of macroscopic contacts. Through the current-voltage and temperature behaviors, the nanocontact properties could be categorized into Ohmic and Schottky types. The electrical properties of the nanowire based two-probe devices could be rationalized as two Ohmic contacts, one Ohmic and one Schottky contacts, and two back-to-back Schottky contacts. Moreover, the nanocontact could be treated as a one-dimensional disordered electron system for further studies. After the intrinsic nanowire and contact resistances are separated from each other, the electron transport and the carrier concentration of native doping in ZnO and InP nanowires can be determined. The nanowires are determined to have low carrier concentrations, implying a high sensitivity to light and gas. The contact and nanowire dominated two-probe devices are exposed to light and gas to identify the contact effects. In addition to the inorganic nanowires, the organic nanomaterials, the HCl-doped polyaniline nanofibers, can be analyzed by using the same approach. The dielectrophoresis technique is implemented to position nanofibers into an electron-beam lithographically patterned nanogap. To shine the electron-beam on contact areas, the organic/inorganic nanocontact resistance is reduced so as to probe the intrinsic electrical property of a single polyaniline nanofiber.

Calculations of the Specific Resistance of Contacts to III-V Nitride Compounds

1995 ◽  
Vol 395 ◽  
Author(s):  
P.A. Barnes ◽  
X-J Zhang ◽  
M.L. Lovejoy ◽  
T.J. Drummond ◽  
H.P. Hjalmarson ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Barrier Height ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Semiconductor Interface ◽  
Barrier Heights ◽  
Effective Masses ◽  
Specific Contact ◽  
Correct Determination ◽  
Device Applications

ABSTRACTWe present calculations of the specific contact resistance for metals to GaN. Our calculations include a correct determination of the Fermi level taking into account the effect of the degenerate doping levels, required in creating tunneling ohmic contacts. Using a recently reported improved WKB approximation suitable in representing the depletion width at the metal-semiconductor interface, and a two band k-p model for the effective masses, specific contact resistance was determined as a function of doping concentration. The specific contact resistance was calculated using the best data available for barrier heights, effective masses and dielectric coefficients for GaN. Because the barrier height at the metal-semiconductor interface has a very large effect on the contact resistance and the available data is sketchy or uncertain, the effect of varying the barrier height on the calculated specific contact resistance was investigated. Further, since the III-V nitrides are being considered for high temperature device applications, the specific contact resistance was also determined as a function of temperature.

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Process Condition ◽  
Specific Contact Resistance ◽  
High Doping Level ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

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