2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Latest Publications

TOTAL DOCUMENTS

95
(FIVE YEARS 0)

H-INDEX

4
(FIVE YEARS 0)

Published By IEEE

9781509008186
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Automated vertical design co-optimization of a 1200V IGBT and diode

2016 ◽  
Author(s):  
M. Bina ◽  
A. Philippou ◽  
M. Hauf ◽  
Ch. Sandow ◽  
F.-J. Niedernostheide

scholarly journals Advanced physical modeling of SiOx resistive random access memories

2016 ◽  
Author(s):  
Toufik Sadi ◽  
Liping Wang ◽  
David Gao ◽  
Adnan Mehonic ◽  
Luca Montesi ◽  
...  
Keyword(s):  
Physical Modeling ◽  
Random Access

Using one-dimensional radiosity to model neutral flux in convex high aspect ratio structures

2016 ◽  
Author(s):  
Paul Manstetten ◽  
Lado Filipovic ◽  
Andreas Hossinger ◽  
Josef Weinbub ◽  
Siegfried Selberherr
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
One Dimensional

Compact modeling of power devices embedded in advanced low-power CMOS circuits

2016 ◽  
Author(s):  
Y. Hirano ◽  
H. Kikuchihara ◽  
T. Iizuka ◽  
M. Miura-Mattausch ◽  
H. J. Mattausch ◽  
...  
Keyword(s):  
Low Power ◽  
Compact Modeling ◽  
Cmos Circuits ◽  
Power Devices ◽  
Low Power Cmos

Investigation of scattering mechanism in nano-scale double gate In0.53Ga0.47As nMOSFETs by a deterministic BTE solver

2016 ◽  
Author(s):  
Shaoyan Di ◽  
Zhiyuan Lun ◽  
Pengying Chang ◽  
Lei Shen ◽  
Kai Zhao ◽  
...  
Keyword(s):  
Double Gate ◽  
Scattering Mechanism ◽  
Nano Scale

Physics-based hot-carrier degradation model for SiGe HBTs

2016 ◽  
Author(s):  
Hamed Kamrani ◽  
Dominic Jabs ◽  
Vincenzo d'Alessandro ◽  
Niccolo Rinaldi ◽  
Christoph Jungemann
Keyword(s):  
Degradation Model ◽  
Hot Carrier ◽  
Hot Carrier Degradation
Load More ...
Sign in / Sign up

Export Citation Format

Share Document