Three-dimensional growth rate modeling and simulation of silicon carbide thermal oxidation

2016 ◽  
Author(s):  
Vito Simonka ◽  
Andreas Hossinger ◽  
Josef Weinbub ◽  
Siegfried Selberherr
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Modeling And Simulation ◽  
Thermal Oxidation ◽  
Three Dimensional ◽  
Dimensional Growth

GROWTH STUDIES OF REGIONAL ISOLATES OF ECHINODONTIUM TINCTORIUM, THE INDIAN PAINT FUNGUS

1962 ◽  
Vol 40 (1) ◽  
pp. 13-23 ◽  
Author(s):  
Lee A. Paine ◽  
William G. O'Regan
Keyword(s):  
Growth Rate ◽  
Sierra Nevada ◽  
Growth Response ◽  
Three Dimensional ◽  
Growth Surface ◽  
Statistical Techniques ◽  
Optimum Temperature ◽  
Forest Regions ◽  
Dimensional Growth

Growth of the fungus Echinodontium linctorium, cause of an important trunk rot in true firs, was studied at various fixed temperatures in vitro. A polynomial approximation of the three-dimensional growth surface over temperature and time was developed with the aid of statistical techniques and computer facilities. The growth of isolates from northern and central Sierra Nevada forest regions of California was compared in this manner. The optimum temperature of the northern isolates was found to vary with the period of observation. For these isolates, the optimum temperature for rate of growth decreased with time, approaching a constant value. The optimum temperature of the central Sierra Nevada isolates was not found to vary with time. At near-optimum temperatures, the estimated growth rate of isolates from northern California was 75% greater at 20 days than that of the central Sierra Nevada isolates. The estimated optimum temperatures of the isolates from the two regions differed by only 1.2 °C at 20 days. Deviations of 1.2 °C from the optimum produced only slight differences in the estimated growth rate of either group of isolates. Use of the constant "terminal optimum temperature" is suggested for describing the growth response of fungi. Unlike the commonly reported "optimum temperature", the value of the terminal optimum temperature does not depend upon the period of observation.

Hormonal modulation of ishikawa cells during three-dimensional growth in vitro☆

1998 ◽  
Vol 5 (4) ◽  
pp. 217-223 ◽  
Author(s):  
D PINELLI ◽  
J DRAKE ◽  
M WILLIAMS ◽  
D CAVANAGH ◽  
J BECKER
Keyword(s):  
Three Dimensional ◽  
Ishikawa Cells ◽  
Hormonal Modulation ◽  
Dimensional Growth

Silicon Carbide Base Ceramic Fiber Synthesis from Polycarbosilane-Modified Polymethylsilane Blend Polymers by Melt Spinning

2011 ◽  
Vol 675-677 ◽  
pp. 139-142
Author(s):  
Xin Xing ◽  
Lin Liu ◽  
Feng Cao ◽  
Xiao Dong Li ◽  
Zeng Yong Chu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Tensile Strength ◽  
Thermal Oxidation ◽  
Melt Spinning ◽  
Ceramic Fiber ◽  
Ceramic Yield ◽  
Base Ceramic

A melt-spinnable precursor for SiC based fibers was prepared from blend polymers of polycarbosilane (PCS) and modified polymethylsilane (M-PMS). The blend polymers cured at 320°C are different from M-PMS and PCS. The ceramic yield of these blend polymers is about 83%. The C/Si ratio of M-PMS/PCS derived ceramics (pyrolyzed at 1250°C) is linear to the content of MPMS in M-PMS/PCS. After melt spinning, thermal oxidation curing, and pyrolysis, Si-C-O fibers were obtained. The diameter and the tensile strength of the resulted fibers are 16.5μm and 1.62GPa, respectively.

Study on the Surface Quality of Al2O3 Nano-Films by Ion Beam Sputtering Deposition

2011 ◽  
Vol 148-149 ◽  
pp. 54-57
Author(s):  
Xiao Ping Lin ◽  
Yun Dong ◽  
Lian Wei Yang
Keyword(s):  
Surface Quality ◽  
Ion Beam ◽  
Three Dimensional ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Atomic Force ◽  
Beam Sputtering ◽  
Dimensional Growth ◽  
Different Thickness

The Al2O3 nano-films of different thicknesses (1~100nm) were successfully deposited on the monocrystalline Si surface by using ion beam sputtering deposition. The surface topography and the component of nano-films with different thickness were analyzed. The quality of the surface of nano-films was systematically studied. When the films’ thickness increase, the studies by atomic force microscope (AFM), X-ray photoelectron spectrum（XPS） show that the gathering grain continually grows up and transits from acerose cellula by two-dimensional growth to globularity by three-dimensional growth. The elements O, Al and Si were found on the surface of Al2O3 nano-films. With the thickness of the films increasing, the content of Al gradually increases and the intensity peak of Si wears off, the surface quality of the deposited films is ceaselessly improved

Rapid Thermal Oxidation of Lightly Doped Silicon in N2O

1994 ◽  
Vol 342 ◽  
Author(s):  
S.C. Sun ◽  
L.S. Wang ◽  
F.L. Yeh ◽  
T.S. Lai ◽  
Y.H. Lin
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Charge Trapping ◽  
Interface State ◽  
Constant Current ◽  
Mos Capacitor ◽  
Rapid Thermal Oxidation ◽  
Doped Silicon ◽  
State Generation ◽  
First Time

ABSTRACTIn this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N2O and O2 on (100), (110), and (111) oriented substrates. It was found that (110)-oriented Si has the highest growth rate in both N2O and dry O2, and (100) Si has the lowest rate. There is no “crossover” on the growth rate of rapid thermal N2O oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N2O. Pressure dependence of rapid thermal N2O oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N2O-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N2O or O2 ambient.

Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling

2007 ◽  
Vol 556-557 ◽  
pp. 61-64
Author(s):  
Y. Shishkin ◽  
Rachael L. Myers-Ward ◽  
Stephen E. Saddow ◽  
Alexander Galyukov ◽  
A.N. Vorob'ev ◽  
...  
Keyword(s):  
Growth Rate ◽  
Growth Process ◽  
Three Dimensional ◽  
Chemical Species ◽  
3D Modelling ◽  
Complete Model ◽  
Cvd Growth ◽  
Dimensional Simulation ◽  
Insight Into ◽  
Hot Zone

A fully-comprehensive three-dimensional simulation of a CVD epitaxial growth process has been undertaken and is reported here. Based on a previously developed simulation platform, which connects fluid dynamics and thermal temperature profiling with chemical species kinetics, a complete model of the reaction process in a low pressure hot-wall CVD reactor has been developed. Close agreement between the growth rate observed experimentally and simulated theoretically has been achieved. Such an approach should provide the researcher with sufficient insight into the expected growth rate in the reactor as well as any variations in growth across the hot zone.

The effect of aliphatic chain length on thermal properties of poly(alkylene dicarboxylate)s

e-Polymers ◽  
2007 ◽  
Vol 7 (1) ◽  
Author(s):  
Corrado Berti ◽  
Annamaria Celli ◽  
Paola Marchese ◽  
Elisabetta Marianucci ◽  
Giancarlo Barbiroli ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Three Dimensional ◽  
The Other ◽  
Aliphatic Chain ◽  
Melting Temperatures ◽  
Avrami Analysis ◽  
Isothermal Analysis ◽  
Dimensional Growth ◽  
Crystallizing Polymers ◽  
Crystalline Forms

AbstractSome poly(alkylene dicarboxylate)s, derived from ethanediol or 1,4- butanediol and different diacids, have been synthesized and analyzed by DSC to determine the correlations existing between the thermal properties and the length of the aliphatic chain. The polymers show crystallization and melting temperatures and enthalpies which increase as the polymethylene segments lengthen, due to the formation of more stable crystals. The samples derived from ethanediol are peculiar; they show reorganization processes during the melting and the melting temperatures are notably higher with respect to those of the other polyesters. This behavior is discussed. Isothermal analysis highlights that poly(alkylene dicarboxylate)s are fast crystallizing polymers. The Avrami analysis suggests a crystallization mechanism characterized by heterogeneous nucleation and three dimensional growth; secondary crystallizations is present only in the samples characterized by short -(CH2)- sequences, due to the reorganization of less perfect crystalline forms. A comparative study between the crystallization rates as a function of the undercooling is reported.

Three-dimensional growth morphologies in diffusion-controlled channel growth

1997 ◽  
Vol 55 (6) ◽  
pp. 7789-7792 ◽  
Author(s):  
T. Abel ◽  
E. Brener ◽  
H. Müller-Krumbhaar
Keyword(s):  
Three Dimensional ◽  
Diffusion Controlled ◽  
Dimensional Growth
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