2015 International Symposium on VLSI Technology, Systems and Applications
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9781479973750

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An ultra-compact and low power neuron based on SOI platform

2015 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vlsi-tsa.2015.7117569 ◽

2015 ◽

Cited By ~ 8

Author(s):

V. Ostwal ◽

R. Meshram ◽

B. Rajendran ◽

U. Ganguly

Keyword(s):

Low Power

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Fabrication of Sub-50nm ZnO thin-film transistors with film profile engineering and laminated hardmask structure

2015 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vlsi-tsa.2015.7117553 ◽

2015 ◽

Author(s):

Rong-Jhe Lyu ◽

Horng-Chih Lin ◽

Tiao-Yuan Huang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Zno Thin Film ◽

Film Profile

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Process optimization to reduce NiSi pipes and NiSi agglomeration on 28nm Nickel silicide LSA ms anneal process

2015 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vlsi-tsa.2015.7117575 ◽

2015 ◽

Cited By ~ 1

Author(s):

Varadharajan Vijayaragavan ◽

Clemens Fitz ◽

Marco Lepper ◽

Ralf Reisdorf ◽

Holub Jan ◽

...

Keyword(s):

Process Optimization ◽

Nickel Silicide

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Investigation of quantum-capacitance induced drain-current loss for multi-gate InGaAs n-MOSFETs

2015 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vlsi-tsa.2015.7117578 ◽

2015 ◽

Author(s):

Hsin-Hung Shen ◽

Chang-Hung Yu ◽

Pin Su

Keyword(s):

Drain Current ◽

Quantum Capacitance ◽

Current Loss

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The sum of the parts: Overcoming leading edge design challenges by working in partnership

2015 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vlsi-tsa.2015.7117549 ◽

2015 ◽

Author(s):

Tim Whitfield

Keyword(s):

Leading Edge ◽

Design Challenges

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Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics and resistive switching mechanism in TiW/SiOx/TiW structure

2015 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vlsi-tsa.2015.7117558 ◽

2015 ◽

Cited By ~ 2

Author(s):

Y. F. Chang ◽

B. Fowler ◽

F. Zhou ◽

K. Byun ◽

J. C. Lee

Keyword(s):

Resistive Switching ◽

Switching Mechanism ◽

Resistive Switching Mechanism ◽

Comprehensive Study

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Prospect of embedded non-volatile memory in the smart society

2015 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vlsi-tsa.2015.7117541 ◽

2015 ◽

Cited By ~ 1

Author(s):

Tadaaki Yamauchi

Keyword(s):

Non Volatile Memory ◽

Volatile Memory

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Insights into resistive switching characteristics of TaOx-RRAM by Monte-Carlo simulation

2015 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vlsi-tsa.2015.7117560 ◽

2015 ◽

Author(s):

Y. D. Zhao ◽

P. Huang ◽

Z. Chen ◽

C. Liu ◽

H. T. Li ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Resistive Switching ◽

Switching Characteristics

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Circuit and system design for robotic flying vehicles

2015 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vlsi-tsa.2015.7117542 ◽

2015 ◽

Author(s):

David M. Brooks

Keyword(s):

System Design ◽

Circuit And System

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High-performance fully transparent Ti-Zn-O thin film transistors

2015 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vlsi-tsa.2015.7117554 ◽

2015 ◽

Author(s):

Nannan Zhao ◽

Dedong Han ◽

Zhuofa Chen ◽

Jing Wu ◽

Yingying Cong ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance

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2015 International Symposium on VLSI Technology, Systems and ApplicationsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

An ultra-compact and low power neuron based on SOI platform

Fabrication of Sub-50nm ZnO thin-film transistors with film profile engineering and laminated hardmask structure

Process optimization to reduce NiSi pipes and NiSi agglomeration on 28nm Nickel silicide LSA ms anneal process

Investigation of quantum-capacitance induced drain-current loss for multi-gate InGaAs n-MOSFETs

The sum of the parts: Overcoming leading edge design challenges by working in partnership

Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics and resistive switching mechanism in TiW/SiOx/TiW structure

Prospect of embedded non-volatile memory in the smart society

Insights into resistive switching characteristics of TaOx-RRAM by Monte-Carlo simulation

Circuit and system design for robotic flying vehicles

High-performance fully transparent Ti-Zn-O thin film transistors

2015 International Symposium on VLSI Technology, Systems and Applications
Latest Publications